FJY4002R Equivalent & Substitute Parts

Part Overview

The FJY4002R is a pre-biased PNP bipolar junction transistor (BJT) manufactured by onsemi in SC-89-3 surface mount packaging. This component integrates internal base and emitter resistors, enabling simplified circuit design for switching and amplification applications. The device is rated for 50 V collector-emitter breakdown voltage and 100 mA maximum collector current with 200 mW power dissipation capability.

The FJY4002R is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity and ensure component availability for new production runs, repairs, and design updates.

Substiute Parts

FJY4002R

onsemiIn Stock: 80500FJY4002R Datasheet

Current PartRFQ

DTA114EET1G

onsemiIn Stock: 32244DTA114EET1G Datasheet

SimilarRFQ

DDTA114EE-7-F

Diodes IncorporatedIn Stock: 3387DDTA114EE-7-F Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the FJY4002R is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

• Transistor type: PNP - Pre-Biased configuration
• Maximum collector current: 100 mA
• Collector-emitter breakdown voltage: 50 V
• Internal base resistor (R1): 10 kOhms
• Internal emitter-base resistor (R2): 10 kOhms
• DC current gain (hFE): minimum 30 at specified test conditions
• Maximum power dissipation: 200 mW or greater
• Transition frequency: 200 MHz or greater

Mechanical Compatibility Criteria:

• Surface mount packaging
• Pin configuration compatible with SC-89-3, SC-75, or SOT-523 footprints

Compliance Criteria:

• RoHS3 compliance
• MSL rating of 1 (Unlimited)

Substitute parts must satisfy all electrical parameters within the specified ranges and maintain compliance certifications. Package variations are acceptable provided PCB layout accommodates the alternative footprint.

Parameter Comparison

Engineering Selection Recommendations

DTA114EET1G (onsemi)

The DTA114EET1G is an active product from onsemi with identical electrical specifications to the FJY4002R across all critical parameters. This substitute maintains the same manufacturer lineage, ensuring design continuity and supply chain familiarity. The device is packaged in SC-75 (SOT-416) format, requiring PCB layout modification from the original SC-89-3 footprint. RoHS3 compliance and MSL 1 rating are maintained. The DTA114EET1G is recommended as the primary substitute for applications where package footprint redesign is feasible.

DDTA114EE-7-F (Diodes Incorporated)

The DDTA114EE-7-F is an active product from Diodes Incorporated that meets all electrical requirements of the FJY4002R. This device offers enhanced transition frequency performance (250 MHz versus 200 MHz) and improved saturation voltage characteristics (250 mV maximum). The SOT-523 package represents a different footprint requiring PCB layout modification. Power dissipation is rated at 150 mW, which is lower than the FJY4002R specification but remains adequate for applications within the 100 mA collector current range. RoHS3 compliance and MSL 1 rating are maintained. The DDTA114EE-7-F is recommended for applications requiring superior high-frequency performance or where the SOT-523 package footprint is already implemented in the design.

Both substitute parts are currently in active production with established supply availability.

Frequently Asked Questions (FAQ)

Q: Can the DTA114EET1G be used as a direct replacement for the FJY4002R without circuit modification?

A: The DTA114EET1G is electrically compatible with the FJY4002R and maintains identical internal resistor values and maximum ratings. However, the package footprint differs (SC-75 versus SC-89-3). PCB layout modification is required to accommodate the alternative package geometry. No circuit schematic changes are necessary.

Q: What is the primary difference between the DTA114EET1G and DDTA114EE-7-F substitutes?

A: Both devices meet the electrical requirements of the FJY4002R. The DTA114EET1G uses SC-75 packaging and is manufactured by onsemi. The DDTA114EE-7-F uses SOT-523 packaging and is manufactured by Diodes Incorporated. The DDTA114EE-7-F offers higher transition frequency (250 MHz) and lower saturation voltage (250 mV). Power dissipation for the DDTA114EE-7-F is 150 mW compared to 200 mW for the FJY4002R and DTA114EET1G.

Q: Are there any compliance or certification differences between the main part and substitutes?

A: All three devices maintain RoHS3 compliance and MSL 1 (Unlimited) moisture sensitivity ratings. No compliance differences exist that would restrict substitution.

Q: Which substitute should be selected for new designs?

A: Selection depends on PCB layout constraints and performance requirements. If the SC-75 footprint is compatible with the design, the DTA114EET1G is recommended due to manufacturer continuity with onsemi. If the SOT-523 footprint is already implemented or higher transition frequency is required, the DDTA114EE-7-F is appropriate. Both are active products with established supply chains.

Q: Is the lower power rating of the DDTA114EE-7-F (150 mW) a limitation?

A: The 150 mW power rating of the DDTA114EE-7-F is adequate for applications operating within the 100 mA maximum collector current specification. Power dissipation is calculated as P = Vce × Ic. At maximum ratings (50 V, 100 mA), theoretical dissipation would be 5 W, but practical circuit operation typically remains well below this level. The 150 mW rating is sufficient for standard switching and amplification applications using pre-biased transistors.

Q: Can the FJY4002R be sourced as a new component?

A: The FJY4002R is classified as obsolete. New original inventory exists but is limited. For new production designs, the active substitute parts (DTA114EET1G or DDTA114EE-7-F) are recommended to ensure long-term supply availability and design sustainability.