FJV4114RMTF Equivalent & Substitute Parts

Part Overview

The FJV4114RMTF is a pre-biased PNP bipolar junction transistor (BJT) manufactured by onsemi, designed for surface mount applications in the SOT-23-3 package. This component operates at 50 V collector-emitter breakdown voltage with a maximum collector current of 100 mA and 200 mW power dissipation. The device features integrated base and emitter-base resistors (4.7 kOhms and 47 kOhms respectively), enabling simplified circuit design without external biasing networks.

The FJV4114RMTF is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements. Active alternatives with identical or superior electrical characteristics are available from multiple manufacturers.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP - Pre-Biased	—
Current - Collector (Ic) (Max)	100	mA
Voltage - Collector Emitter Breakdown (Max)	50	V
Resistor - Base (R1)	4.7	kOhms
Resistor - Emitter Base (R2)	47	kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	68 @ 5mA, 5V	—
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 10mA	—
Current - Collector Cutoff (Max)	100	nA
Frequency - Transition	200	MHz
Power - Max	200	mW
Package / Case	TO-236-3, SC-59, SOT-23-3	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the FJV4114RMTF is determined by strict equivalence of the following electrical and mechanical parameters:

Critical Substitution Parameters:

Transistor Type: PNP - Pre-Biased
Maximum Collector Current (Ic): 100 mA
Collector-Emitter Breakdown Voltage: 50 V
Base Resistor (R1): 4.7 kOhms
Emitter-Base Resistor (R2): 47 kOhms
Package Type: SOT-23-3 (TO-236-3) or equivalent surface mount package
Mounting Type: Surface Mount
RoHS Compliance: ROHS3 Compliant

Direct Substitutes maintain all critical parameters identically and are pin-compatible with the FJV4114RMTF in SOT-23-3 packaging.

Similar Substitutes maintain all critical electrical parameters but differ in package configuration (SC-59, SC-75) or internal resistor values (R2 = 4.7 kOhms instead of 47 kOhms). These require PCB layout modification or are suitable only for applications where the different resistor network does not affect circuit performance.

Upgrade Substitutes exceed the electrical specifications of the FJV4114RMTF while maintaining compatibility with the same package footprint and critical parameters. These parts offer improved performance characteristics such as higher DC current gain, lower saturation voltage, or higher power dissipation.

Parameter Comparison

Part Number	Manufacturer	Product Status	Ic (Max) mA	Vce(br) V	R1 kOhms	R2 kOhms	hFE (Min)	Vce Sat (Max) mV	Power (Max) mW	Package	Substitution Type
FJV4114RMTF	onsemi	Obsolete	100	50	4.7	47	68 @ 5mA, 5V	300 @ 500µA, 10mA	200	SOT-23-3	Main Part
MMUN2133LT1G	onsemi	Active	100	50	4.7	47	80 @ 5mA, 10V	250 @ 300µA, 10mA	246	SOT-23-3	Direct
MUN2133T1G	onsemi	Active	100	50	4.7	47	80 @ 5mA, 10V	250 @ 300µA, 10mA	230	SC-59	Direct
DTA143ZET1G	onsemi	Active	100	50	4.7	47	80 @ 5mA, 10V	250 @ 300µA, 10mA	200	SC-75	Similar
MMUN2132LT1G	onsemi	Active	100	50	4.7	4.7	15 @ 5mA, 10V	250 @ 1mA, 10mA	246	SOT-23-3	Similar
MUN2132T1G	onsemi	Active	100	50	4.7	4.7	15 @ 5mA, 10V	250 @ 1mA, 10mA	230	SC-59	Similar
NSVMMUN2133LT1G	onsemi	Active	100	50	4.7	47	80 @ 5mA, 10V	250 @ 300µA, 10mA	246	SOT-23-3	Direct
DDTA143ZCA-7-F	Diodes Incorporated	Active	100	50	4.7	47	80 @ 10mA, 5V	300 @ 250µA, 5mA	200	SOT-23-3	Direct
PDTA143ZT,215	Nexperia USA Inc.	Active	100	50	4.7	47	100 @ 10mA, 5V	100 @ 250µA, 5mA	250	TO-236AB	Upgrade
DDTA143TCA-7-F	Diodes Incorporated	Active	100	50	4.7	—	100 @ 1mA, 5V	300 @ 250µA, 2.5mA	200	SOT-23-3	Similar

Engineering Selection Recommendations

For Direct Pin-Compatible Replacement (SOT-23-3 Package):

MMUN2133LT1G, NSVMMUN2133LT1G, and DDTA143ZCA-7-F are direct substitutes for the FJV4114RMTF. All three parts maintain identical base and emitter-base resistor values (4.7 kOhms and 47 kOhms), identical maximum collector current (100 mA), and identical collector-emitter breakdown voltage (50 V). These parts are active products with ROHS3 compliance and MSL 1 rating. MMUN2133LT1G and NSVMMUN2133LT1G are manufactured by onsemi, ensuring design continuity with the original supplier. DDTA143ZCA-7-F is manufactured by Diodes Incorporated and offers equivalent electrical performance with higher inventory availability (111,300 units in stock).

For Alternative Package Configurations:

MUN2133T1G (SC-59 package) and DTA143ZET1G (SC-75 package) maintain all critical electrical parameters identical to the FJV4114RMTF but require PCB layout modification due to different package footprints. These alternatives are suitable when PCB redesign is acceptable and when the alternative package provides manufacturing or assembly advantages.

For Applications Requiring Lower Emitter-Base Resistance:

MMUN2132LT1G and MUN2132T1G feature an emitter-base resistor of 4.7 kOhms (instead of 47 kOhms), resulting in lower DC current gain (15 vs. 68 minimum). These parts are suitable only for applications where the lower gain and different biasing characteristics do not compromise circuit performance.

For Performance Enhancement:

PDTA143ZT,215 (Nexperia USA Inc.) is an upgrade substitute offering superior electrical characteristics: higher DC current gain (100 minimum vs. 68), significantly lower saturation voltage (100 mV vs. 300 mV), and higher power dissipation (250 mW vs. 200 mW). This part is suitable for applications requiring improved switching performance or lower power loss. The TO-236AB package is mechanically compatible with SOT-23-3 footprints.

All recommended substitutes are ROHS3 compliant and carry MSL 1 (unlimited) moisture sensitivity rating, matching the environmental compliance profile of the FJV4114RMTF.

Frequently Asked Questions (FAQ)

Q: Can MMUN2133LT1G be used as a direct replacement for FJV4114RMTF without PCB modification?

A: Yes. MMUN2133LT1G is a direct substitute with identical package (SOT-23-3), identical resistor network (R1 = 4.7 kOhms, R2 = 47 kOhms), and identical electrical ratings (100 mA, 50 V). No PCB modification is required. The part is pin-compatible and functionally equivalent.

Q: What is the difference between MMUN2133LT1G and MUN2133T1G?

A: Both parts are manufactured by onsemi with identical electrical specifications. The primary difference is package configuration: MMUN2133LT1G uses SOT-23-3 (TO-236) packaging, while MUN2133T1G uses SC-59 packaging. SC-59 is a larger package requiring different PCB footprint and assembly considerations. Electrical performance is equivalent.

Q: Why do MMUN2132LT1G and MUN2132T1G have different resistor values?

A: The MMUN2132 series features an emitter-base resistor (R2) of 4.7 kOhms instead of 47 kOhms. This results in significantly lower DC current gain (15 minimum vs. 68-80 for the 2133 series). These parts are suitable only for applications where lower gain is acceptable or beneficial. They are not recommended as general-purpose replacements for the FJV4114RMTF.

Q: Is DDTA143ZCA-7-F from Diodes Incorporated compatible with the FJV4114RMTF?

A: Yes. DDTA143ZCA-7-F is a direct substitute with identical package (SOT-23-3), identical resistor network (R1 = 4.7 kOhms, R2 = 47 kOhms), and identical electrical ratings (100 mA, 50 V). The part is manufactured by Diodes Incorporated and offers high inventory availability. Pin compatibility and functional equivalence are confirmed.

Q: Can DTA143ZET1G be used in place of FJV4114RMTF?

A: DTA143ZET1G maintains all critical electrical parameters (100 mA, 50 V, 4.7 kOhms/47 kOhms resistor network) but uses SC-75 packaging instead of SOT-23-3. This requires PCB layout modification and different assembly tooling. Use this part only when PCB redesign is acceptable and when the SC-75 package provides manufacturing advantages.

Q: What are the advantages of PDTA143ZT,215 over the FJV4114RMTF?

A: PDTA143ZT,215 offers three performance improvements: (1) higher DC current gain (100 minimum vs. 68), (2) significantly lower saturation voltage (100 mV vs. 300 mV), and (3) higher power dissipation capability (250 mW vs. 200 mW). These characteristics reduce power loss and improve switching speed. The TO-236AB package is mechanically compatible with SOT-23-3 footprints.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All recommended substitute parts carry ROHS3 compliance certification, matching the environmental compliance profile of the FJV4114RMTF. All parts also carry MSL 1 (unlimited) moisture sensitivity rating.

Q: Which substitute part has the highest inventory availability?

A: DDTA143ZCA-7-F (Diodes Incorporated) has the highest inventory availability with 111,300 units in stock. MMUN2133LT1G (onsemi) has 35,400 units available. Both parts are direct substitutes with identical electrical and package specifications.

Q: Can substitute parts be mixed in the same production batch?

A: Yes, provided the selected substitute maintains identical electrical parameters and package configuration. Direct substitutes (MMUN2133LT1G, NSVMMUN2133LT1G, DDTA143ZCA-7-F) are interchangeable without circuit modification. Similar or upgrade substitutes with different package configurations or resistor values require design review and validation before use in production.

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