FJPF13007TU Equivalent & Substitute Parts

Part Overview

The FJPF13007TU is an NPN bipolar junction transistor manufactured by onsemi, rated for 400 V collector-emitter breakdown voltage and 8 A maximum collector current. This through-hole component is housed in a TO-220-3 package and delivers 40 W maximum power dissipation. The device operates at a transition frequency of 4 MHz with a maximum junction temperature of 150°C.

The FJPF13007TU is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this transistor topology.

Substiute Parts

FJPF13007TU

onsemiIn Stock: 4906FJPF13007TU Datasheet

Current PartRFQ

FJPF13007H2TU

onsemiIn Stock: 2347FJPF13007H2TU Datasheet

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ST13007DFP

STMicroelectronicsIn Stock: 2308ST13007DFP Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the FJPF13007TU is determined by the following critical parameters:

• Transistor Type: Must be NPN
• Voltage - Collector Emitter Breakdown (Max): Must be ≥ 400 V
• Current - Collector (Ic) (Max): Must be ≥ 8 A
• Power - Max: Must be ≥ 40 W
• Mounting Type: Must be Through Hole
• Package / Case: Must be TO-220-3 compatible

Substitute parts meeting these electrical and mechanical specifications can replace the FJPF13007TU in circuit applications. Variations in DC current gain (hFE), saturation voltage (Vce), and transition frequency do not preclude substitution provided the minimum electrical ratings are satisfied and the device operates within the specified temperature range.

Parameter Comparison

Engineering Selection Recommendations

FJPF13007H2TU is the primary substitute for FJPF13007TU. Both devices are manufactured by onsemi and share identical electrical ratings across all critical parameters: 400 V breakdown voltage, 8 A collector current, 40 W power dissipation, and 4 MHz transition frequency. The FJPF13007H2TU carries Active product status, ensuring ongoing availability and supply chain support. This part is supplied in tube packaging and is RoHS3 compliant, meeting modern environmental and regulatory requirements. The higher DC current gain (hFE = 26 @ 2A, 5V) compared to the original part (hFE = 8 @ 2A, 5V) represents an improvement in amplification characteristics without compromising circuit compatibility.

ST13007DFP is a secondary substitute manufactured by STMicroelectronics. This device meets the core electrical requirements: 400 V breakdown voltage and 8 A collector current. However, the maximum power rating is 36 W, which is 4 W below the original specification of 40 W. The transition frequency specification is not provided for this part. The ST13007DFP is classified as obsolete, similar to the original FJPF13007TU, which limits its suitability for new supply chain planning. This part is RoHS3 compliant and supplied in tube packaging.

For applications requiring active product status and guaranteed long-term availability, FJPF13007H2TU is the recommended selection. For applications where the 36 W power rating of ST13007DFP is sufficient, this part remains electrically compatible, though supply continuity cannot be assured due to its obsolete classification.

Frequently Asked Questions (FAQ)

Q: Can FJPF13007H2TU directly replace FJPF13007TU in existing circuit designs?

A: Yes. Both parts are NPN transistors with identical voltage (400 V), current (8 A), and power (40 W) ratings. They share the same TO-220-3 package and operate across the same temperature range (150°C TJ). The higher DC current gain of FJPF13007H2TU does not prevent direct substitution and may improve circuit performance in amplification stages.

Q: What is the significance of the difference in DC current gain (hFE) between FJPF13007TU and FJPF13007H2TU?

A: FJPF13007H2TU has a minimum hFE of 26 @ 2A, 5V, compared to 8 @ 2A, 5V for FJPF13007TU. This indicates improved current amplification in the substitute part. For circuits designed around the lower gain specification, the higher gain of FJPF13007H2TU will not cause incompatibility; it may reduce base drive requirements or improve switching speed in certain topologies.

Q: Is ST13007DFP suitable as a substitute despite its lower power rating?

A: ST13007DFP is electrically compatible with FJPF13007TU for voltage and current specifications. However, its 36 W maximum power dissipation is 4 W below the original 40 W specification. Substitution is appropriate only for applications where the actual power dissipation remains below 36 W. Thermal analysis of the specific circuit is required to confirm suitability.

Q: What packaging differences exist between these substitute parts?

A: FJPF13007TU packaging specification is not provided in the data. FJPF13007H2TU is supplied in tube packaging. ST13007DFP is supplied in tube packaging. Both substitute parts use the same TO-220-3 through-hole package format, ensuring mechanical compatibility with existing PCB layouts and mounting hardware.

Q: Why is FJPF13007H2TU classified as Active while FJPF13007TU is Obsolete?

A: Product status reflects manufacturer support and supply availability. FJPF13007H2TU is actively manufactured and supported by onsemi, ensuring continued availability for procurement. FJPF13007TU is no longer in production. For new designs or ongoing production requiring long-term component availability, FJPF13007H2TU is the appropriate selection.

Q: Are there compliance or regulatory differences between the substitute parts?

A: FJPF13007H2TU is RoHS3 compliant. ST13007DFP is RoHS3 compliant. Both parts are REACH unaffected and carry EAR99 ECCN classification. All three parts share identical HTSUS code 8541.29.0095. Compliance profiles are equivalent across the substitute group.