FJP5021OV Equivalent & Substitute Parts

Part Overview

The FJP5021OV is an NPN bipolar junction transistor manufactured by onsemi, rated for 500 V collector-emitter breakdown voltage and 5 A maximum collector current in a Through Hole TO-220-3 package. This device is classified as obsolete, making equivalent substitute parts necessary for ongoing design support and procurement continuity. The FJP5021OV delivers 50 W maximum power dissipation with an 18 MHz transition frequency, suitable for high-voltage switching and amplification applications.

Substiute Parts

FJP5021OV

onsemiIn Stock: 921FJP5021OV Datasheet

Current PartRFQ

BUJ303A,127

WeEn SemiconductorsIn Stock: 6631BUJ303A,127 Datasheet

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BUL1203E

STMicroelectronicsIn Stock: 3276BUL1203E Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the FJP5021OV is determined by strict alignment of the following electrical and mechanical parameters:

Primary Substitution Criteria:

• Transistor Type: NPN configuration
• Current Rating: 5 A maximum collector current
• Voltage Rating: Minimum 500 V collector-emitter breakdown voltage
• Package: TO-220-3 Through Hole mounting
• Moisture Sensitivity: MSL 1 (Unlimited)

Secondary Compatibility Factors:

• Vce Saturation characteristics at specified base and collector currents
• DC Current Gain (hFE) minimum specifications
• Collector Cutoff Current (ICBO) ratings
• Operating temperature range compatibility

The substitute parts BUJ303A,127 and BUL1203E meet or exceed the primary electrical specifications of the FJP5021OV while maintaining identical package and mounting requirements. Both substitutes are active products with current manufacturing status and full compliance certifications.

Parameter Comparison

Engineering Selection Recommendations

BUJ303A,127 (WeEn Semiconductors): This substitute provides direct electrical compatibility with the FJP5021OV across all primary parameters. The 500 V breakdown voltage matches the original specification exactly. The device is active in production with ROHS3 compliance and unlimited moisture sensitivity rating. Higher power dissipation capability (100 W versus 50 W) provides design margin. Collector cutoff current is elevated to 100 µA compared to the original 10 µA specification. This substitute is suitable for applications requiring exact voltage matching and active product support.

BUL1203E (STMicroelectronics): This substitute exceeds the voltage specification at 550 V breakdown, providing additional design margin for high-voltage applications. The device is active in production with ROHS3 compliance. Power dissipation capability is doubled to 100 W. Collector cutoff current is 100 µA. The lower DC current gain (9 @ 2A, 5V) compared to the original specification requires circuit verification for applications dependent on gain characteristics. This substitute is appropriate for designs tolerating higher voltage ratings and lower gain specifications.

Both substitutes maintain TO-220-3 package compatibility, Through Hole mounting, and MSL 1 moisture sensitivity rating. Selection between substitutes depends on specific application requirements regarding voltage margin, gain characteristics, and manufacturer preference.

Frequently Asked Questions (FAQ)

Q: Can the BUJ303A,127 directly replace the FJP5021OV in existing designs?

A: The BUJ303A,127 meets all primary electrical specifications of the FJP5021OV, including 500 V breakdown voltage, 5 A collector current, and TO-220-3 package compatibility. Circuit operation is supported by this substitute. The elevated collector cutoff current (100 µA versus 10 µA) may affect leakage-sensitive applications and requires circuit analysis.

Q: What is the primary difference between the two substitute options?

A: The BUJ303A,127 maintains exact 500 V voltage matching with the original FJP5021OV. The BUL1203E provides 550 V breakdown voltage, offering additional voltage margin. Both devices deliver 100 W power dissipation compared to the original 50 W rating. DC current gain specifications differ between the substitutes, with BUJ303A,127 providing higher gain at lower collector current levels.

Q: Are both substitute parts available in the same package as the FJP5021OV?

A: Both BUJ303A,127 and BUL1203E are supplied in TO-220-3 Through Hole packages, matching the original FJP5021OV package specification. Mechanical compatibility with existing PCB layouts and thermal management solutions is maintained.

Q: What compliance certifications apply to the substitute parts?

A: Both BUJ303A,127 and BUL1203E are ROHS3 compliant and REACH unaffected. Both carry MSL 1 (Unlimited) moisture sensitivity rating. These certifications align with modern manufacturing and environmental standards.

Q: How do the saturation voltage characteristics compare between the original and substitutes?

A: The FJP5021OV specifies 1 V saturation at 600 mA base current and 3 A collector current. The BUJ303A,127 specifies 1.5 V at the same conditions. The BUL1203E specifies 1.5 V saturation at 1 A base current and 3 A collector current. Higher saturation voltages in the substitutes result in increased power dissipation during saturation operation and require circuit verification for switching applications.

Q: Is the FJP5021OV still available for procurement?

A: The FJP5021OV is classified as obsolete. Active substitute parts BUJ303A,127 and BUL1203E are recommended for new designs and ongoing procurement requirements.