FJP2145TU Equivalent & Substitute Parts

Part Overview

The FJP2145TU is an NPN bipolar junction transistor manufactured by onsemi, rated for 800 V collector-emitter breakdown voltage and 5 A maximum collector current. This device is packaged in a TO-220-3 through-hole configuration and is compliant with RoHS3 and REACH regulations. The FJP2145TU is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility within the specified parameter ranges while accommodating packaging and thermal performance variations.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	800	V
Current - Collector (Ic) (Max)	5	A
Power - Max	120	W
Frequency - Transition	15	MHz
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 200mA, 5V	—
Vce Saturation (Max) @ Ib, Ic	2V @ 300mA, 1.5A	V
Current - Collector Cutoff (Max)	10	µA
Operating Temperature Range	-55 to 125	°C
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution eligibility for the FJP2145TU is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 800 V minimum
Frequency - Transition: 15 MHz minimum
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V minimum
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A maximum
Current - Collector Cutoff (Max): 10 µA maximum
Mounting Type: Through Hole
Package / Case: TO-220-3 or TO-220F-3

Secondary Substitution Considerations:

Current - Collector (Ic) (Max): Substitute parts rated at 3 A or higher are acceptable for applications not requiring the full 5 A capability
Power - Max: Substitute parts with lower power ratings are acceptable for applications within their thermal limits
Operating Temperature Range: Substitute parts with reduced temperature ranges are acceptable for applications within the specified operating window

The substitute parts listed below satisfy the primary criteria and maintain electrical compatibility with the FJP2145TU within their respective parameter specifications.

Parameter Comparison

Parameter	FJP2145TU	FJPF2145TU	FJP5027OTU	KSC5027OTU
Manufacturer	onsemi	Fairchild Semiconductor	onsemi	onsemi
Product Status	Obsolete	Active	Active	Active
Transistor Type	NPN	NPN	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	800 V	800 V	800 V	800 V
Current - Collector (Ic) (Max)	5 A	5 A	3 A	3 A
Power - Max	120 W	40 W	50 W	50 W
Frequency - Transition	15 MHz	15 MHz	15 MHz	15 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 200mA, 5V	20 @ 200mA, 5V	20 @ 200mA, 5V	20 @ 200mA, 5V
Vce Saturation (Max) @ Ib, Ic	2V @ 300mA, 1.5A	2V @ 300mA, 1.5A	2V @ 300mA, 1.5A	2V @ 300mA, 1.5A
Current - Collector Cutoff (Max)	10 µA	10 µA	10 µA	10 µA
Operating Temperature Range	-55 to 125°C	-55 to 125°C	Up to 150°C	Up to 150°C
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220F-3	TO-220-3	TO-220-3
RoHS Status	ROHS3 Compliant	Not specified	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	Not specified	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

FJPF2145TU (Fairchild Semiconductor)

The FJPF2145TU is an active product that maintains identical electrical specifications to the FJP2145TU, including 5 A collector current, 800 V breakdown voltage, and equivalent DC current gain characteristics. The primary distinction is the TO-220F-3 package variant, which accommodates full-pack configurations. This substitute is suitable for direct replacement in applications where the original FJP2145TU specifications are required and packaging flexibility is acceptable. Compliance certifications for this part are not specified in the provided data.

FJP5027OTU (onsemi)

The FJP5027OTU is an active onsemi product with reduced maximum collector current (3 A versus 5 A) and maximum power dissipation (50 W versus 120 W). This substitute maintains all critical electrical parameters including 800 V breakdown voltage, 15 MHz transition frequency, and identical saturation characteristics. The FJP5027OTU is suitable for applications where collector current requirements do not exceed 3 A and thermal dissipation remains within 50 W limits. This part is RoHS3 compliant and REACH unaffected. Operating temperature extends to 150°C, providing enhanced thermal margin in elevated-temperature environments.

KSC5027OTU (onsemi)

The KSC5027OTU is an active onsemi product with electrical specifications identical to the FJP5027OTU, including 3 A maximum collector current and 50 W power dissipation. This substitute maintains 800 V breakdown voltage and all saturation and gain characteristics. The KSC5027OTU is suitable for applications with identical current and power constraints as the FJP5027OTU. This part is RoHS3 compliant and REACH unaffected. Operating temperature extends to 150°C.

Frequently Asked Questions (FAQ)

Q: Can the FJP5027OTU or KSC5027OTU replace the FJP2145TU in all applications?

A: The FJP5027OTU and KSC5027OTU are suitable substitutes only for applications where the maximum collector current requirement does not exceed 3 A and power dissipation remains within 50 W. Applications requiring the full 5 A capability or 120 W power dissipation of the FJP2145TU must use the FJPF2145TU or identify alternative components with higher current and power ratings.

Q: What is the difference between the FJPF2145TU and the FJP2145TU?

A: The FJPF2145TU and FJP2145TU share identical electrical specifications. The primary difference is the package designation: FJPF2145TU uses TO-220F-3 (full-pack configuration) while FJP2145TU uses standard TO-220-3. Both are through-hole mounted and mechanically compatible with standard TO-220 footprints.

Q: Are the FJP5027OTU and KSC5027OTU electrically identical?

A: The FJP5027OTU and KSC5027OTU maintain identical electrical specifications across all provided parameters, including 3 A maximum collector current, 50 W power dissipation, 800 V breakdown voltage, and saturation characteristics. Both are active products manufactured by onsemi with RoHS3 compliance and REACH unaffected status.

Q: What is the impact of the reduced power rating on the FJP5027OTU and KSC5027OTU?

A: The reduced maximum power dissipation (50 W versus 120 W) limits thermal performance in high-power applications. These substitutes are suitable only for applications where continuous power dissipation remains within 50 W. Thermal management and circuit design must account for this reduced capability.

Q: Can I use the FJP5027OTU or KSC5027OTU in applications requiring 5 A collector current?

A: No. The FJP5027OTU and KSC5027OTU are rated for maximum 3 A collector current. Applications requiring 5 A operation must use the FJPF2145TU or identify alternative components with 5 A or higher ratings.

Q: What are the compliance differences between substitute parts?

A: The FJPF2145TU compliance certifications are not specified in the provided data. The FJP5027OTU and KSC5027OTU are both RoHS3 compliant and REACH unaffected. Applications with specific regulatory requirements should verify compliance status with the component manufacturer or distributor.

Q: Are there packaging considerations when substituting these parts?

A: All substitute parts use through-hole mounting in TO-220 package variants (TO-220-3 or TO-220F-3). Standard TO-220 footprints accommodate all listed substitutes. Verify PCB layout compatibility with the specific package variant selected.

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