FJP13009 Equivalent & Substitute Parts

Part Overview

The FJP13009 is an NPN bipolar junction transistor manufactured by onsemi, rated for 400 V collector-emitter breakdown voltage and 12 A maximum collector current in a Through Hole TO-220-3 package. This device is classified as obsolete, making equivalent substitute parts necessary for new designs and ongoing production requirements. The FJP13009 delivers 100 W maximum power dissipation and operates at junction temperatures up to 150°C, serving applications requiring high-voltage, moderate-current switching and amplification.

Substiute Parts

FJP13009

onsemiIn Stock: 1407FJP13009 Datasheet

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BUJ106A,127

WeEn SemiconductorsIn Stock: 818BUJ106A,127 Datasheet

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PHE13009,127

WeEn SemiconductorsIn Stock: 695PHE13009,127 Datasheet

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ST13007D

STMicroelectronicsIn Stock: 680301ST13007D Datasheet

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ST13009

STMicroelectronicsIn Stock: 4387ST13009 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the FJP13009 are selected based on electrical and mechanical compatibility within the following criteria:

Primary Matching Parameters:

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown: 400 V (minimum requirement)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 or compatible TO-220 variants
• Operating Temperature: 150°C (TJ)

Secondary Compatibility Factors:

• Current - Collector (Ic) (Max): 10 A or greater
• Power - Max: 80 W or greater
• DC Current Gain (hFE): Minimum 8 @ specified conditions

Substitutes are grouped into two categories based on current rating alignment:

Category A - Full Current Rating Match (12 A): Parts maintaining the original 12 A collector current specification, ensuring direct functional equivalence in high-current applications.

Category B - Reduced Current Rating (8–10 A): Parts with lower maximum collector current but maintaining 400 V breakdown voltage and compatible packaging, suitable for applications not requiring the full 12 A specification.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: ST13009

The ST13009 manufactured by STMicroelectronics is the preferred substitute for the obsolete FJP13009. This part maintains identical electrical specifications: 12 A maximum collector current, 400 V breakdown voltage, and 100 W power dissipation. The ST13009 is in active production status with ROHS3 compliance and REACH unaffected certification. The package variant (TO-220 versus TO-220-3) is mechanically compatible for Through Hole mounting applications. Current inventory of 4,280 units ensures supply availability.

Secondary Substitute: PHE13009,127

The PHE13009,127 from WeEn Semiconductors provides an alternative with matching 12 A collector current and 400 V breakdown voltage. Power dissipation is rated at 80 W, which is lower than the original 100 W specification. This part is RoHS Compliant and in active production. The TO-220AB package variant is mechanically compatible. This substitute is suitable for applications where the 80 W power rating is sufficient.

Reduced-Current Alternatives: BUJ106A,127 and ST13007D

The BUJ106A,127 (10 A) and ST13007D (8 A) are suitable only for applications not requiring the full 12 A collector current specification. Both maintain 400 V breakdown voltage and Through Hole mounting compatibility. These parts are in active production with appropriate compliance certifications. Selection of these reduced-current alternatives requires verification that circuit design does not depend on the original 12 A current capability.

Frequently Asked Questions (FAQ)

Q: Can the ST13009 directly replace the FJP13009 without circuit modification?

A: Yes. The ST13009 maintains identical electrical specifications for collector current (12 A), breakdown voltage (400 V), and power dissipation (100 W). The TO-220 package is mechanically compatible with TO-220-3 footprints in Through Hole applications. No circuit modification is required.

Q: What is the difference between TO-220 and TO-220-3 packages?

A: Both designations refer to the same three-lead Through Hole package format used for power transistors. TO-220-3 and TO-220AB are variant nomenclatures for the same physical package. All substitute parts listed are compatible with existing TO-220-3 PCB layouts.

Q: Why does the PHE13009,127 have a lower power rating (80 W) than the FJP13009 (100 W)?

A: The PHE13009,127 is rated for 80 W maximum power dissipation while maintaining the same 12 A collector current and 400 V breakdown voltage. This difference reflects thermal design characteristics of the specific device. Selection depends on whether the application requires the full 100 W dissipation capability or if 80 W is sufficient for the intended thermal environment.

Q: Can the BUJ106A,127 or ST13007D be used as substitutes?

A: These parts are suitable only if the application does not require the full 12 A collector current specification. The BUJ106A,127 is rated for 10 A maximum and the ST13007D for 8 A maximum. Both maintain 400 V breakdown voltage and compatible packaging. Circuit analysis is required to confirm that reduced current capability does not compromise performance.

Q: What compliance certifications should I verify for production use?

A: All active substitute parts listed carry ROHS3 or RoHS Compliant certification and REACH unaffected status. The obsolete FJP13009 carries REACH unaffected designation. Verify compliance requirements for your specific application and regional regulations before final part selection.

Q: Are there inventory considerations for substitute selection?

A: ST13009 has the highest current inventory (4,280 units), followed by PHE13009,127 (644 units) and ST13007D (680,200 units). BUJ106A,127 has 808 units available. Inventory levels may influence long-term supply planning for production programs.