FJB3307DTM Equivalent & Substitute Parts

Part Overview

The FJB3307DTM is an NPN bipolar junction transistor manufactured by onsemi, rated for 400 V collector-emitter breakdown voltage and 8 A maximum collector current. The device is packaged in a TO-263 (D2PAK) surface mount configuration with a maximum power dissipation of 1.72 W. This part is classified as obsolete, making equivalent substitute parts necessary for ongoing production and maintenance applications. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating the D2PAK package standard.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	400	V
Current - Collector (Ic) (Max)	8	A
Power - Max	1.72	W
Operating Temperature (TJ)	150	°C
Package / Case	TO-263-3, D2PAK	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitute parts for the FJB3307DTM are selected based on strict electrical and mechanical parameter alignment. The primary substitution criteria are:

Transistor Type: NPN configuration required for functional equivalence
Voltage Rating: 400 V collector-emitter breakdown voltage (maximum) must be met or exceeded
Current Rating: 8 A maximum collector current must be supported
Package: TO-263-3 (D2PAK) surface mount package for mechanical and thermal compatibility
Operating Temperature: 150°C junction temperature rating
Mounting Type: Surface mount configuration for PCB assembly compatibility

The identified substitute parts BUJ105AB,118 and STB13007DT4 satisfy all core electrical parameters and package requirements. Both parts are active products with current manufacturing status, providing supply chain continuity for the obsolete FJB3307DTM.

Parameter Comparison

Parameter	FJB3307DTM (onsemi)	BUJ105AB,118 (WeEn Semiconductors)	STB13007DT4 (STMicroelectronics)
Transistor Type	NPN	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	400 V	400 V	400 V
Current - Collector (Ic) (Max)	8 A	8 A	8 A
Power - Max	1.72 W	125 W	80 W
Operating Temperature (TJ)	150°C	150°C	150°C
Package / Case	TO-263-3, D2PAK	TO-263-3, D2PAK	TO-263-3, D2PAK
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Vce Saturation (Max) @ Ib, Ic	3V @ 2A, 8A	1V @ 800mA, 4A	3V @ 1A, 5A
DC Current Gain (hFE) (Min) @ Ic, Vce	5 @ 5A, 5V	13 @ 500mA, 5V	8 @ 5A, 5V
Current - Collector Cutoff (Max)	—	100µA	100µA
Product Status	Obsolete	Active	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

BUJ105AB,118 (WeEn Semiconductors) is suitable for applications where the FJB3307DTM is specified. This part is an active product with current manufacturing status, ensuring long-term supply availability. The device meets all core electrical parameters: 400 V breakdown voltage, 8 A collector current, and 150°C operating temperature. The D2PAK package provides direct mechanical compatibility. RoHS compliance and MSL 1 rating support modern manufacturing and storage requirements.

STB13007DT4 (STMicroelectronics) is also suitable for direct substitution. This part maintains active product status with significantly higher inventory availability (26,100 units in stock). Electrical specifications align with the FJB3307DTM across voltage, current, and temperature ratings. ROHS3 compliance and REACH unaffected status satisfy regulatory requirements. The D2PAK package ensures PCB assembly compatibility without design modification.

Both substitute parts exceed the power dissipation rating of the original FJB3307DTM (1.72 W), providing thermal margin in applications. Selection between BUJ105AB,118 and STB13007DT4 depends on supply chain preference, inventory availability, and regional compliance requirements.

Frequently Asked Questions (FAQ)

Q: Can BUJ105AB,118 or STB13007DT4 be used as direct replacements for FJB3307DTM without circuit modification?

A: Yes. Both substitute parts maintain identical voltage (400 V), current (8 A), and temperature (150°C) specifications. The D2PAK package is mechanically and thermally equivalent. No circuit redesign is required for substitution.

Q: What is the significance of the higher power ratings in the substitute parts?

A: The substitute parts (BUJ105AB,118 at 125 W and STB13007DT4 at 80 W) have higher power dissipation capabilities than the original FJB3307DTM (1.72 W). This provides thermal margin and does not create incompatibility. The application will operate within the thermal envelope of either substitute part.

Q: Are there differences in saturation voltage between the parts?

A: Yes. The FJB3307DTM specifies 3 V saturation at 2 A and 8 A. BUJ105AB,118 specifies 1 V at 800 mA and 4 A, while STB13007DT4 specifies 3 V at 1 A and 5 A. These differences reflect different measurement conditions and do not prevent functional substitution in standard switching applications.

Q: What is the difference between the packaging formats (Tape & Reel vs. Cut Tape)?

A: Tape & Reel (TR) packaging for BUJ105AB,118 and Cut Tape (CT) & Digi-Reel® for STB13007DT4 are assembly format variations. Both formats contain the same D2PAK component and are compatible with standard pick-and-place equipment. Selection depends on production volume and assembly line configuration.

Q: Why is the FJB3307DTM classified as obsolete?

A: Obsolete status indicates the part is no longer manufactured by onsemi. The substitute parts BUJ105AB,118 and STB13007DT4 are active products with current manufacturing support, ensuring availability for new designs and ongoing production requirements.

Q: Are there compliance differences between the substitute parts?

A: BUJ105AB,118 carries RoHS compliance certification. STB13007DT4 carries ROHS3 compliance and REACH unaffected status. Both meet modern regulatory requirements. Selection should align with specific regional or customer compliance mandates.

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