FJB102TM Equivalent & Substitute Parts

Part Overview

The FJB102TM is an NPN Darlington bipolar junction transistor manufactured by onsemi, rated for 100 V collector-emitter breakdown voltage and 8 A maximum collector current. The device is housed in a Surface Mount TO-263 (D2PAK) package and is designed for applications requiring high current gain and moderate power dissipation up to 80 W. The part is Active status and RoHS3 compliant. Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to inventory constraints, manufacturing discontinuation, or supply chain considerations.

Substiute Parts

FJB102TM

onsemiIn Stock: 2293FJB102TM Datasheet

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MJB41CG

onsemiIn Stock: 1404MJB41CG Datasheet

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NJVMJB41CT4G

Fairchild SemiconductorIn Stock: 15519NJVMJB41CT4G Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the FJB102TM is determined by the following electrical and mechanical parameters:

Primary Substitution Criteria:

• Voltage rating: Minimum 100 V collector-emitter breakdown voltage
• Package compatibility: TO-263-3 (D2PAK) Surface Mount form factor
• Mounting type: Surface Mount
• RoHS3 compliance and MSL Level 1 rating

Secondary Considerations:

• Current rating: Substitute parts must support the application's maximum collector current requirement
• Power dissipation: Substitute parts must meet or exceed the thermal requirements of the application
• DC current gain: Substitute parts must provide sufficient base drive capability for the intended circuit function

The identified substitute parts (MJB41CG and NJVMJB41CT4G) share the same package footprint and voltage rating as the FJB102TM. However, both substitute parts have reduced maximum collector current (6 A versus 8 A) and reduced maximum power dissipation (2 W versus 80 W). These substitutes are suitable only for applications where the circuit design operates within the lower current and power specifications of the substitute devices.

Parameter Comparison

Engineering Selection Recommendations

FJB102TM (Primary Part): The FJB102TM is the specified component for applications requiring 8 A collector current and 80 W power dissipation in a D2PAK package. This part is Active status, RoHS3 compliant, and carries MSL Level 1 rating. Selection of the FJB102TM is appropriate when the full electrical specifications are required and inventory is available.

MJB41CG (onsemi Substitute): The MJB41CG is an onsemi-manufactured NPN transistor in the same D2PAK package with identical 100 V voltage rating. This part is Active status and RoHS3 compliant with MSL Level 1 rating. The MJB41CG is suitable as a substitute only for applications where collector current does not exceed 6 A and power dissipation does not exceed 2 W. The significantly lower DC current gain (15 versus 1000) indicates a different device class and requires circuit redesign for base drive considerations.

NJVMJB41CT4G (Fairchild Semiconductor Substitute): The NJVMJB41CT4G is a Fairchild Semiconductor NPN transistor in the same D2PAK package. This part is Active status with MSL Level 1 rating. Electrical specifications match the MJB41CG, with maximum collector current of 6 A and power dissipation of 2 W. RoHS3 compliance status is not specified for this part. The NJVMJB41CT4G is suitable as a substitute only for applications where collector current does not exceed 6 A and power dissipation does not exceed 2 W.

Frequently Asked Questions (FAQ)

Q: Can MJB41CG or NJVMJB41CT4G be used as direct replacements for FJB102TM in all applications?

A: No. While both substitute parts share the same D2PAK package and 100 V voltage rating, they have significantly reduced maximum collector current (6 A versus 8 A) and power dissipation (2 W versus 80 W). Direct substitution is only possible in applications where the circuit operates within the lower electrical specifications of the substitute parts.

Q: What is the primary difference between FJB102TM and the substitute parts?

A: The FJB102TM is classified as an NPN Darlington transistor with a DC current gain of 1000 at 3 A, 4 V. The substitute parts (MJB41CG and NJVMJB41CT4G) are standard NPN transistors with a DC current gain of 15 at the same conditions. This represents a fundamental difference in device architecture and requires different base drive circuit design.

Q: Are the substitute parts mechanically compatible with FJB102TM?

A: Yes. All three parts use the TO-263-3 (D2PAK) Surface Mount package with identical pinout and footprint. PCB layout and thermal management considerations remain the same.

Q: What compliance certifications apply to each part?

A: FJB102TM and MJB41CG are both RoHS3 compliant with MSL Level 1 rating. NJVMJB41CT4G carries MSL Level 1 rating; RoHS3 compliance status is not specified in the available data.

Q: Can I use NJVMJB41CT4G if FJB102TM and MJB41CG are unavailable?

A: NJVMJB41CT4G is electrically equivalent to MJB41CG and shares the same D2PAK package. Substitution is possible only for applications within the 6 A collector current and 2 W power dissipation limits. Verify RoHS3 compliance requirements with the component supplier before selection.

Q: What is the significance of the Vce saturation difference between FJB102TM and the substitute parts?

A: FJB102TM has a Vce saturation of 2.5 V at 80 mA base current and 8 A collector current. The substitute parts have 1.5 V saturation at 600 mA base current and 6 A collector current. These differences reflect the different transistor architectures and require circuit analysis to determine impact on application performance.