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FJAF4210OTU Equivalent & Substitute Parts
Part Overview
The FJAF4210OTU is a Bipolar (BJT) Transistor with PNP configuration, rated for 140 V collector-emitter breakdown voltage and 10 A maximum collector current. This component is designed for through-hole mounting in the TO-3PF package and operates at a maximum junction temperature of 150°C with 80 W power dissipation capability.
The FJAF4210OTU is classified as an obsolete product. Identification of equivalent and substitute parts is necessary to support ongoing maintenance, repair, and redesign activities for legacy systems and applications utilizing this transistor.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | PNP | — |
| Current - Collector (Ic) (Max) | 10 | A |
| Voltage - Collector Emitter Breakdown (Max) | 140 | V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 500mA, 5A | — |
| Current - Collector Cutoff (Max) | 10 | µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 3A, 4V | — |
| Power - Max | 80 | W |
| Frequency - Transition | 30 | MHz |
| Operating Temperature (TJ) | 150 | °C |
| Mounting Type | Through Hole | — |
| Package / Case | TO-3P-3 Full Pack | — |
| Supplier Device Package | TO-3PF | — |
Substitute Part Grouping Explanation
Substitution of the FJAF4210OTU is determined by strict equivalence across all critical electrical and mechanical parameters. A valid substitute part must satisfy the following criteria:
Electrical Parameters (Must Match Exactly):
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 10 A
- Voltage - Collector Emitter Breakdown (Max): 140 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 3A, 4V
- Power - Max: 80 W
- Frequency - Transition: 30MHz
- Operating Temperature (TJ): 150°C
Mechanical Parameters (Must Match Exactly):
- Mounting Type: Through Hole
- Package / Case: TO-3P-3 Full Pack
- Supplier Device Package: TO-3PF
Parts meeting all specified parameters are classified as direct equivalents and may be used as substitutes in applications originally designed for the FJAF4210OTU.
Parameter Comparison
| Parameter | FJAF4210OTU (onsemi) | FJAF4210OTU (Fairchild Semiconductor) |
|---|---|---|
| Manufacturer | onsemi | Fairchild Semiconductor |
| Product Status | Obsolete | Active |
| Transistor Type | PNP | PNP |
| Current - Collector (Ic) (Max) | 10 A | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 140 V | 140 V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 500mA, 5A | 500mV @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 3A, 4V | 70 @ 3A, 4V |
| Power - Max | 80 W | 80 W |
| Frequency - Transition | 30MHz | 30MHz |
| Operating Temperature (TJ) | 150°C | 150°C |
| Mounting Type | Through Hole | Through Hole |
| Package / Case | TO-3P-3 Full Pack | TO-3P-3 Full Pack |
| Supplier Device Package | TO-3PF | TO-3PF |
| RoHS Status | ROHS3 Compliant | Not specified |
| REACH Status | REACH Unaffected | Not specified |
Engineering Selection Recommendations
The FJAF4210OTU manufactured by Fairchild Semiconductor is a direct electrical and mechanical equivalent to the obsolete onsemi FJAF4210OTU. Both parts share identical specifications across all critical parameters: PNP transistor type, 10 A maximum collector current, 140 V breakdown voltage, 80 W power rating, 30 MHz transition frequency, and TO-3PF package configuration.
The Fairchild Semiconductor variant carries Active product status, indicating current availability and ongoing manufacturing support. This status provides supply chain continuity for applications requiring the FJAF4210OTU specification.
The onsemi version is compliant with ROHS3 and REACH standards. Compliance documentation for the Fairchild Semiconductor equivalent should be verified against specific regulatory requirements for the target application.
Selection between these equivalent parts should be based on availability, supply chain logistics, and regulatory compliance requirements specific to the end application.
Frequently Asked Questions (FAQ)
Q: Can the Fairchild Semiconductor FJAF4210OTU be used as a direct replacement for the onsemi FJAF4210OTU?
A: Yes. Both parts are electrically and mechanically identical across all specified parameters, including transistor type, current rating, voltage rating, power dissipation, frequency response, and TO-3PF package configuration. Direct substitution is supported.
Q: What is the significance of the product status difference between the two parts?
A: The onsemi version is classified as Obsolete, indicating discontinued manufacturing. The Fairchild Semiconductor version is classified as Active, indicating current production and availability. For new designs or ongoing production requirements, the Active status part provides supply chain assurance.
Q: Are there any compliance or certification differences between these parts?
A: The onsemi FJAF4210OTU is documented as ROHS3 Compliant and REACH Unaffected. Compliance information for the Fairchild Semiconductor equivalent is not provided in the available data. Applications with specific regulatory requirements should verify compliance documentation with the respective manufacturer.
Q: Does the TO-3PF package configuration remain the same for both parts?
A: Yes. Both parts use the TO-3P-3 Full Pack case with TO-3PF supplier device package designation. Through-hole mounting characteristics are identical, supporting direct board-level substitution without layout modifications.
Q: Are there inventory considerations when selecting between these equivalents?
A: The onsemi version shows 763 pieces in stock. The Fairchild Semiconductor version shows 1806 pieces in stock. Inventory availability may influence selection for immediate procurement requirements.
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