FH105A-TR-E Equivalent & Substitute Parts

Part Overview

The FH105A-TR-E is an RF transistor manufactured by onsemi, classified as an NPN bipolar junction transistor (BJT) designed for RF applications. This device operates at 10V collector-emitter breakdown voltage with a transition frequency of 8GHz and maximum power dissipation of 150mW. The part is currently obsolete, making equivalent and substitute components necessary for ongoing design support, production continuity, and system maintenance. Surface mount packaging in 6-MCP configuration enables integration into compact RF circuit designs.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	10	V
Frequency - Transition	8	GHz
Noise Figure (Typ @ f)	1.4	dB @ 1.5GHz
Gain	10	dB @ 1.5GHz
Power - Max	150	mW
DC Current Gain (hFE) (Min)	90	@ 10mA, 5V
Current - Collector (Ic) (Max)	30	mA
Operating Temperature (TJ)	150	°C
Mounting Type	Surface Mount	—
Package / Case	6-TSSOP, SC-88, SOT-363	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the FH105A-TR-E requires evaluation of electrical and mechanical compatibility based on the following critical parameters:

Electrical Compatibility Criteria:

Transistor Type: NPN configuration
Voltage - Collector Emitter Breakdown (Max): Must equal or exceed 10V
Frequency - Transition: Must equal or exceed 8GHz
Power - Max: Must equal or exceed 150mW
Current - Collector (Ic) (Max): Must equal or exceed 30mA
Operating Temperature: Must support 150°C (TJ)

Mechanical Compatibility Criteria:

Mounting Type: Surface Mount
Package / Case: Compatible with 6-TSSOP, SC-88, or SOT-363 footprints
Moisture Sensitivity Level: MSL 1 (Unlimited) preferred

Substitute Parts Identified:

Group 1 - Direct RF Performance Equivalents (8GHz Transition Frequency):

BFR193FH6327XTSA1 (Infineon Technologies): Matches 8GHz transition frequency with enhanced voltage rating (12V) and higher power capability (580mW)
BFS481H6327XTSA1 (Infineon Technologies): Dual NPN configuration at 8GHz with 12V rating and SOT-363 package compatibility

Group 2 - Higher Frequency Performance Alternatives:

BF776H6327XTSA1 (Infineon Technologies): 46GHz transition frequency with reduced voltage rating (4.7V) and enhanced power (200mW)
BFU690F,115 (NXP USA Inc.): 18GHz transition frequency with 5.5V rating and 230mW power capability

Group 3 - High-Power Discrete Alternatives:

MAPR-002729-170M00 (MACOM Technology Solutions): 65V rating with 170W power capability, chassis mount configuration
MAPRST0912-50 (MACOM Technology Solutions): 65V rating with 50W power capability, chassis mount configuration

Parameter Comparison

Parameter	FH105A-TR-E (Main)	BFR193FH6327XTSA1	BF776H6327XTSA1	BFS481H6327XTSA1	BFU690F,115	MAPR-002729-170M00	MAPRST0912-50
Manufacturer	onsemi	Infineon	Infineon	Infineon	NXP USA Inc.	MACOM	MACOM
Transistor Type	NPN	NPN	NPN	2 NPN (Dual)	NPN	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	10V	12V	4.7V	12V	5.5V	65V	65V
Frequency - Transition	8GHz	8GHz	46GHz	8GHz	18GHz	—	—
Noise Figure (Typ @ f)	1.4dB @ 1.5GHz	1dB ~ 1.6dB @ 900MHz ~ 1.8GHz	0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz	0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz	0.6dB ~ 0.7dB @ 1.5GHz ~ 2.4GHz	—	—
Gain	10dB @ 1.5GHz	12.5dB	24dB	20dB	15.5dB ~ 18.5dB	9.11dB ~ 9.69dB	10.16dB ~ 10.25dB
Power - Max	150mW	580mW	200mW	175mW	230mW	170W	50W
DC Current Gain (hFE) (Min)	90 @ 10mA, 5V	70 @ 30mA, 8V	180 @ 30mA, 3V	70 @ 5mA, 8V	90 @ 20mA, 2V	—	—
Current - Collector (Ic) (Max)	30mA	80mA	50mA	20mA	100mA	27A	5.3A
Operating Temperature (TJ)	150°C	150°C	150°C	150°C	150°C	200°C	200°C
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Chassis Mount	Chassis Mount
Package / Case	6-TSSOP, SC-88, SOT-363	SOT-723	SC-82A, SOT-343	6-VSSOP, SC-88, SOT-363	SOT-343F	—	—
Product Status	Obsolete	Active	Active	Active	Active	Active	Active
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	—	—

Engineering Selection Recommendations

For Direct RF Performance Equivalence (8GHz Applications):

BFR193FH6327XTSA1 and BFS481H6327XTSA1 maintain the 8GHz transition frequency specification of the FH105A-TR-E. Both devices are manufactured by Infineon Technologies with Active product status and ROHS3 compliance. BFR193FH6327XTSA1 provides single NPN configuration with enhanced voltage rating (12V) and superior power handling (580mW), suitable for applications requiring higher voltage margins. BFS481H6327XTSA1 offers dual NPN configuration in SOT-363 package, directly compatible with the original FH105A-TR-E footprint, making it the preferred choice for direct board-level substitution in existing designs.

For Higher Frequency Applications (18GHz and Above):

BFU690F,115 (NXP USA Inc.) operates at 18GHz transition frequency with improved noise figure (0.6dB ~ 0.7dB) and higher collector current capability (100mA). This device is suitable for applications requiring extended frequency performance beyond the original 8GHz specification. BF776H6327XTSA1 (Infineon Technologies) extends performance to 46GHz with enhanced gain (24dB), appropriate for ultra-wideband RF applications, though voltage rating is reduced to 4.7V.

For High-Power Discrete Applications:

MAPR-002729-170M00 and MAPRST0912-50 (MACOM Technology Solutions) represent chassis-mount alternatives with significantly elevated power ratings (170W and 50W respectively) and voltage capability (65V). These devices are suitable for power amplifier stages and high-power RF applications where the original surface-mount configuration is insufficient. Both devices maintain Active product status and ROHS3 compliance with extended operating temperature range (200°C).

Compliance and Availability:

All substitute parts maintain REACH Unaffected status and MSL 1 (Unlimited) moisture sensitivity rating, ensuring compatibility with standard manufacturing and storage protocols. Active product status across all substitute options ensures long-term availability and supply chain continuity compared to the obsolete FH105A-TR-E.

Frequently Asked Questions (FAQ)

Q: Can BFS481H6327XTSA1 directly replace FH105A-TR-E in existing PCB designs?

A: BFS481H6327XTSA1 is a dual NPN configuration in SOT-363 package, which is mechanically compatible with the FH105A-TR-E footprint. However, the dual configuration requires circuit redesign if only single transistor operation is needed. Electrical parameters exceed the original specification, making it suitable for direct substitution in applications where dual transistor functionality can be utilized or where one transistor remains unused.

Q: What is the primary difference between BFR193FH6327XTSA1 and BFS481H6327XTSA1?

A: BFR193FH6327XTSA1 is a single NPN transistor in SOT-723 package with higher power capability (580mW) and collector current (80mA). BFS481H6327XTSA1 is a dual NPN configuration in SOT-363 package with lower individual power rating (175mW) and collector current (20mA per transistor). Both maintain 8GHz transition frequency and 12V voltage rating.

Q: Are the MACOM devices suitable for RF applications requiring 8GHz operation?

A: MAPR-002729-170M00 and MAPRST0912-50 do not specify transition frequency, indicating they are optimized for lower frequency, high-power applications. These devices are not suitable for 8GHz RF applications and should be selected only for power amplifier stages operating at frequencies below their unspecified transition frequency limit.

Q: What packaging considerations apply when substituting BFU690F,115 for FH105A-TR-E?

A: BFU690F,115 uses SOT-343F package, which differs from the FH105A-TR-E SOT-363 footprint. PCB layout modification is required for this substitution. The device operates at 18GHz transition frequency with reduced voltage rating (5.5V), making it suitable for higher frequency applications where voltage headroom is adequate.

Q: Do all substitute parts meet the same moisture sensitivity and environmental compliance standards?

A: All substitute parts maintain MSL 1 (Unlimited) moisture sensitivity rating and ROHS3 compliance (where specified). REACH Unaffected status is confirmed for Infineon and NXP devices. MACOM devices do not specify REACH status in the provided data. Verify REACH compliance with MACOM directly for applications requiring explicit REACH documentation.

Q: Which substitute provides the closest electrical performance match to FH105A-TR-E?

A: BFR193FH6327XTSA1 provides the closest electrical performance match, maintaining 8GHz transition frequency, similar noise figure (1dB ~ 1.6dB vs. 1.4dB), and comparable gain characteristics. The 12V voltage rating exceeds the original 10V specification, providing improved voltage margin. Higher power capability (580mW vs. 150mW) and collector current (80mA vs. 30mA) offer design flexibility without compromising frequency performance.

Q: Can BF776H6327XTSA1 be used in applications designed for 8GHz operation?

A: BF776H6327XTSA1 operates at 46GHz transition frequency, which exceeds 8GHz requirements. However, the reduced voltage rating (4.7V vs. 10V) and different package (SOT-343 vs. SOT-363) require circuit redesign. This device is suitable only for applications requiring extended frequency performance beyond 8GHz where voltage constraints are acceptable.

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