FGPF15N60UNDF IGBT Equivalent & Substitute Parts

Part Overview

The FGPF15N60UNDF is an NPT (Non-Punch Through) IGBT manufactured by onsemi, rated for 600V collector-emitter breakdown voltage and 30A continuous collector current. This device is packaged in a TO-220-3 through-hole configuration and is designed for general-purpose switching applications requiring moderate power dissipation up to 42W.

The FGPF15N60UNDF has reached obsolete product status. Identifying equivalent substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this component.

Substiute Parts

FGPF15N60UNDF

onsemiIn Stock: 1686FGPF15N60UNDF Datasheet

Current PartRFQ

STGF15H60DF

STMicroelectronicsIn Stock: 25246STGF15H60DF Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the FGPF15N60UNDF is determined by strict alignment of the following electrical and mechanical parameters:

Critical Matching Parameters:

• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 30A
• Mounting Type: Through Hole
• Package / Case: TO-220-3 form factor

Functional Compatibility Parameters:

• Input Type: Standard gate drive
• Operating Temperature Range: Minimum -55°C to 150°C overlap required

The STGF15H60DF from STMicroelectronics satisfies all critical matching parameters. While this substitute employs Trench Field Stop IGBT technology (versus the NPT technology of the original), both devices operate within identical voltage and current ratings, share the same through-hole TO-220-3 package footprint, and maintain compatible gate drive characteristics. The substitute is currently in active production status, ensuring supply availability.

Parameter Comparison

Engineering Selection Recommendations

STGF15H60DF Selection Basis:

The STGF15H60DF is a direct functional substitute for the FGPF15N60UNDF based on the following engineering criteria:

1. Voltage and Current Ratings: Both devices are rated for 600V collector-emitter breakdown and 30A continuous collector current, ensuring electrical compatibility in existing circuit designs.

2. Package Compatibility: Both devices utilize the TO-220-3 through-hole package, permitting direct PCB footprint compatibility without layout modifications.

3. Gate Drive Compatibility: Both devices feature standard gate drive input characteristics, allowing existing gate drive circuits to operate without modification.

4. Compliance Status: The STGF15H60DF maintains ROHS3 compliance and REACH unaffected status, matching the regulatory posture of the original part.

5. Product Availability: The STGF15H60DF is in active production status with substantial inventory availability (25,200 pieces), whereas the FGPF15N60UNDF is obsolete.

Design Considerations:

The STGF15H60DF exhibits lower on-state voltage (2V versus 2.7V) and reduced turn-on switching energy (136µJ versus 370µJ), resulting in lower conduction and switching losses. The substitute demonstrates higher turn-off switching energy (207µJ versus 67µJ) and extended switching delay times. Applications with tight thermal budgets or high-frequency switching may experience improved thermal performance with the substitute. Applications sensitive to switching transient timing should evaluate the extended delay characteristics of the substitute device.

Frequently Asked Questions (FAQ)

Q: Can the STGF15H60DF directly replace the FGPF15N60UNDF in existing designs?

A: Yes. Both devices share identical voltage ratings (600V), current ratings (30A), and TO-220-3 package footprints. Gate drive requirements are compatible. Direct PCB substitution is possible without layout modifications.

Q: What are the key differences between these two IGBT types?

A: The FGPF15N60UNDF uses NPT (Non-Punch Through) IGBT technology, while the STGF15H60DF uses Trench Field Stop technology. These represent different internal semiconductor structures. Despite this difference, both devices meet the same voltage, current, and package specifications required for substitution.

Q: Will switching performance change with the STGF15H60DF?

A: Yes. The STGF15H60DF exhibits lower turn-on switching energy (136µJ versus 370µJ) and lower on-state voltage (2V versus 2.7V), reducing conduction losses. However, turn-off switching energy is higher (207µJ versus 67µJ) and switching delay times are extended. Circuit performance depends on the specific application switching frequency and load characteristics.

Q: Are there thermal considerations when substituting these parts?

A: The STGF15H60DF has a maximum power rating of 30W compared to 42W for the FGPF15N60UNDF. Applications operating near the 42W limit of the original part should verify that the 30W rating of the substitute is adequate for the intended duty cycle. The lower on-state voltage of the substitute may reduce overall thermal dissipation in conduction-limited applications.

Q: Is the operating temperature range compatible?

A: The STGF15H60DF supports an extended operating temperature range (-55°C to 175°C) compared to the FGPF15N60UNDF (-55°C to 150°C). This provides additional thermal margin in the substitute device.

Q: What is the gate charge difference, and does it matter?

A: The STGF15H60DF has higher gate charge (81nC versus 43nC). This requires longer gate drive pulse widths or higher gate drive current to achieve the same switching speed. Existing gate drive circuits should be evaluated to confirm adequate drive capability.

Q: Are both parts RoHS and REACH compliant?

A: Yes. Both the FGPF15N60UNDF and STGF15H60DF are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements.