FGD3N60LSDTM IGBT 600V 6A Equivalent & Substitute Parts

Part Overview

The FGD3N60LSDTM is a 600V, 6A IGBT manufactured by onsemi in a Surface Mount TO-252-3 (DPAK) package. This device is classified as Last Time Buy, indicating discontinued production with limited inventory availability. The FGD3N60LSDTM is suitable for general-purpose switching applications requiring 600V blocking voltage and moderate current handling at 6A collector current rating.

Identifying equivalent and substitute parts is necessary due to the Last Time Buy status, which restricts future procurement. Alternative IGBT devices with compatible electrical and mechanical parameters enable design continuity and long-term supply chain reliability.

Substiute Parts

FGD3N60LSDTM
onsemiIn Stock: 85690FGD3N60LSDTM Datasheet
FGD3N60LSDTM
Current Part
IKD03N60RFATMA1
Infineon TechnologiesIn Stock: 2901IKD03N60RFATMA1 Datasheet
IKD03N60RFATMA1
Similar
STGD3NB60SDT4
STMicroelectronicsIn Stock: 2227STGD3NB60SDT4 Datasheet
STGD3NB60SDT4
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Key Parameters

Parameter Value Unit
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 6 A
Current - Collector Pulsed (Icm) 25 A
Vce(on) (Max) @ Vge, Ic 1.5V @ 10V, 3A V
Power - Max 40 W
Gate Charge 12.5 nC
Td (on/off) @ 25°C 40ns / 600ns ns
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution eligibility for the FGD3N60LSDTM is determined by the following critical parameters:

Voltage Rating: All substitute parts must maintain a Collector-Emitter breakdown voltage of 600V to ensure equivalent blocking capability and circuit protection.

Current Rating: Substitute parts must support a minimum collector current (Ic) of 6A. Parts with higher current ratings (6.5A) are acceptable as they provide equivalent or superior current handling without circuit modification.

Package Compatibility: All substitute parts must use the TO-252-3 (DPAK) Surface Mount package to ensure mechanical and thermal compatibility with existing PCB layouts and thermal management designs.

Electrical Characteristics: Vce(on) saturation voltage, gate charge, and switching delays are secondary parameters. Variations in these characteristics are acceptable provided the primary voltage, current, and package requirements are met.

Compliance: All substitute parts must maintain ROHS3 compliance and equivalent moisture sensitivity levels to ensure manufacturing and environmental compatibility.

Parameter Comparison

Parameter FGD3N60LSDTM (onsemi) IKD03N60RFATMA1 (Infineon) STGD3NB60SDT4 (STMicroelectronics)
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V 600 V
Current - Collector (Ic) (Max) 6 A 6.5 A 6 A
Current - Collector Pulsed (Icm) 25 A 7.5 A 25 A
Vce(on) (Max) @ Vge, Ic 1.5V @ 10V, 3A 2.5V @ 15V, 2.5A 1.5V @ 15V, 3A
Power - Max 40 W 53.6 W 48 W
Gate Charge 12.5 nC 17.1 nC 18 nC
Td (on/off) @ 25°C 40ns / 600ns 10ns / 128ns 125µs / —
Package / Case TO-252-3, DPAK TO-252-3, DPAK TO-252-3, DPAK
Mounting Type Surface Mount Surface Mount Surface Mount
Product Status Last Time Buy Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

IKD03N60RFATMA1 (Infineon Technologies TrenchStop™ Series)

This substitute part meets all primary substitution criteria with 600V voltage rating, 6.5A collector current, and TO-252-3 package compatibility. The device is in Active product status with established supply chain availability. ROHS3 compliance and unlimited moisture sensitivity level ensure manufacturing compatibility. The higher power dissipation rating (53.6W) and improved switching characteristics (10ns turn-on, 128ns turn-off) provide performance advantages in high-frequency applications. Gate charge is 17.1nC, representing a 36.8% increase relative to the FGD3N60LSDTM; this parameter must be evaluated against gate driver capabilities in the target application.

STGD3NB60SDT4 (STMicroelectronics PowerMESH™ Series)

This substitute part meets all primary substitution criteria with 600V voltage rating, 6A collector current, and TO-252-3 package compatibility. The device is in Active product status with established supply availability. ROHS3 compliance and unlimited moisture sensitivity level ensure manufacturing compatibility. Vce(on) saturation voltage matches the FGD3N60LSDTM at 1.5V, and pulsed collector current rating matches at 25A. Gate charge is 18nC, representing a 44% increase; this parameter must be evaluated against gate driver capabilities. Turn-on delay is significantly longer (125µs) compared to the FGD3N60LSDTM (40ns), indicating lower switching frequency suitability.

Both substitute parts are suitable for direct replacement in applications where the primary design constraints are 600V blocking voltage, 6A continuous current, and TO-252-3 package form factor. Selection between substitutes depends on application-specific requirements for switching frequency, gate drive characteristics, and thermal management capacity.

Frequently Asked Questions (FAQ)

Q: Can the IKD03N60RFATMA1 be used as a direct replacement for the FGD3N60LSDTM?

A: Yes. Both devices share identical 600V voltage rating, compatible current ratings (6.5A vs. 6A), and identical TO-252-3 package specifications. PCB layout and thermal management designs require no modification. Gate charge differences (17.1nC vs. 12.5nC) must be evaluated against gate driver output impedance and switching frequency requirements.

Q: Can the STGD3NB60SDT4 be used as a direct replacement for the FGD3N60LSDTM?

A: Yes. Both devices share identical 600V voltage rating, identical 6A current rating, and identical TO-252-3 package specifications. PCB layout and thermal management designs require no modification. Turn-on delay is significantly longer (125µs vs. 40ns); applications requiring switching frequencies above 1kHz must be evaluated for compatibility.

Q: What are the key differences between the two substitute parts?

A: The IKD03N60RFATMA1 features faster switching characteristics (10ns/128ns vs. 125µs/—) and higher power dissipation capability (53.6W vs. 48W), making it suitable for higher-frequency applications. The STGD3NB60SDT4 provides lower on-state voltage matching and higher pulsed current rating (25A), making it suitable for lower-frequency, higher-current-pulse applications.

Q: Are all three parts pin-compatible?

A: Yes. All three parts use the TO-252-3 (DPAK) package with identical pin configuration: Gate, Collector, and Emitter connections. No PCB modification is required for mechanical substitution.

Q: Do all substitute parts meet RoHS compliance requirements?

A: Yes. All three parts are ROHS3 Compliant with unlimited moisture sensitivity level (MSL 1), ensuring compatibility with standard manufacturing processes and environmental regulations.

Q: What is the impact of higher gate charge on circuit design?

A: Gate charge affects gate driver output impedance and switching speed. Higher gate charge (17.1nC or 18nC vs. 12.5nC) requires proportionally higher gate current to achieve equivalent switching speed. Gate driver selection and circuit layout must accommodate these requirements.

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