FGAF20N60SMD IGBT Equivalent & Substitute Parts

Part Overview

The FGAF20N60SMD is an IGBT Field Stop device manufactured by onsemi, rated for 600V collector-emitter breakdown voltage and 40A maximum collector current. This component is classified as obsolete, necessitating identification of equivalent substitute parts for ongoing system maintenance and new design implementations. The through-hole TO-3PF package and specific electrical characteristics define the scope of compatible alternatives.

Substiute Parts

FGAF20N60SMD
onsemiIn Stock: 10015FGAF20N60SMD Datasheet
FGAF20N60SMD
Current Part
NGTG20N60L2TF1G
onsemiIn Stock: 1071NGTG20N60L2TF1G Datasheet
NGTG20N60L2TF1G
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IXDR35N60BD1
IXYSIn Stock: 824IXDR35N60BD1 Datasheet
IXDR35N60BD1
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STGFW20V60DF
STMicroelectronicsIn Stock: 1586STGFW20V60DF Datasheet
STGFW20V60DF
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Key Parameters

Parameter Value Unit
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 40 A
Current - Collector Pulsed (Icm) 60 A
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 20A V
Power - Max 75 W
Gate Charge 64 nC
Reverse Recovery Time (trr) 26.7 ns
Operating Temperature Range -55 to 175 °C (TJ)
Mounting Type Through Hole -
Package / Case TO-3P-3 Full Pack -
IGBT Type Field Stop -

Substitute Part Grouping Explanation

Substitute parts for the FGAF20N60SMD are selected based on the following critical parameters:

Primary Matching Criteria:

  • Voltage - Collector Emitter Breakdown: 600V (exact match required)
  • Current - Collector (Ic) (Max): 40A minimum (equal or higher acceptable)
  • Mounting Type: Through Hole
  • Package compatibility: TO-3PF or equivalent footprint

Secondary Compatibility Factors:

  • Operating Temperature Range: -55°C to 175°C minimum
  • RoHS3 Compliance and REACH Unaffected status
  • Gate Charge and switching characteristics for circuit performance

Substitutes are grouped by their adherence to these parameters. Parts meeting all primary criteria are considered direct equivalents. Parts with higher current ratings or different IGBT types (Field Stop vs. Trench Field Stop vs. NPT) are evaluated for functional compatibility within the specified electrical envelope.

Parameter Comparison

Parameter FGAF20N60SMD (Main) NGTG20N60L2TF1G IXDR35N60BD1 STGFW20V60DF
Manufacturer onsemi onsemi IXYS STMicroelectronics
Voltage - Collector Emitter Breakdown (Max) 600V 600V 600V 600V
Current - Collector (Ic) (Max) 40A 40A 38A 40A
Current - Collector Pulsed (Icm) 60A - 48A 80A
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 20A - 2.7V @ 15V, 35A 2.2V @ 15V, 20A
Power - Max 75W 64W 125W 52W
Gate Charge 64nC - 140nC 116nC
Reverse Recovery Time (trr) 26.7ns - 40ns 40ns
Operating Temperature Range -55 to 175°C - -55 to 150°C -55 to 175°C
IGBT Type Field Stop - NPT Trench Field Stop
Package / Case TO-3P-3 Full Pack TO-3PF TO-247-3 TO-3P-3 Full Pack
Mounting Type Through Hole Through Hole Through Hole Through Hole
Product Status Obsolete Obsolete Active Obsolete
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

NGTG20N60L2TF1G (onsemi)

This part matches the FGAF20N60SMD across all primary electrical parameters: 600V breakdown voltage, 40A collector current, and TO-3PF package. Both devices are onsemi products with identical RoHS3 compliance and REACH Unaffected status. The NGTG20N60L2TF1G is classified as obsolete, consistent with the main part status. This represents the closest functional equivalent for direct substitution in existing designs.

STGFW20V60DF (STMicroelectronics)

This STMicroelectronics IGBT meets the 600V and 40A specifications with TO-3PF package compatibility. The Trench Field Stop technology differs from the main part's Field Stop type, but electrical ratings align within the specified envelope. Operating temperature range extends to 175°C, matching the main part. RoHS3 and REACH compliance are confirmed. This part is suitable for applications where the higher pulsed current rating (80A vs. 60A) and lower on-state voltage (2.2V vs. 1.7V) do not conflict with circuit design constraints.

IXDR35N60BD1 (IXYS)

This IXYS device provides 600V breakdown voltage with 38A collector current, slightly below the main part's 40A rating. The TO-247-3 package differs from the TO-3PF footprint, requiring PCB layout modification. The NPT IGBT type represents a different technology class. Operating temperature maximum is 150°C, below the main part's 175°C specification. This part is active in production, ensuring long-term availability. Selection of this part requires verification that the 38A current rating and 150°C maximum junction temperature are acceptable for the target application, and that PCB layout can accommodate the TO-247-3 package.

Frequently Asked Questions (FAQ)

Q: Can NGTG20N60L2TF1G directly replace FGAF20N60SMD without circuit modification?

A: The NGTG20N60L2TF1G shares identical voltage and current ratings with the FGAF20N60SMD and uses the same TO-3PF package. Direct substitution is supported from an electrical and mechanical standpoint. However, detailed datasheet review of switching characteristics and gate drive requirements is necessary to confirm circuit compatibility.

Q: What is the primary difference between the STGFW20V60DF and FGAF20N60SMD?

A: Both devices are rated for 600V and 40A with TO-3PF packages. The STGFW20V60DF uses Trench Field Stop technology versus the main part's Field Stop technology. The STGFW20V60DF exhibits lower on-state voltage (2.2V vs. 1.7V at 20A) and higher pulsed current capability (80A vs. 60A). These differences may affect thermal performance and switching losses in the application circuit.

Q: Why is IXDR35N60BD1 listed as a substitute if it has a different package?

A: The IXDR35N60BD1 meets the core voltage and current specifications (600V, 38A) required for functional equivalence. The TO-247-3 package differs from the TO-3PF, necessitating PCB redesign. This part is included because it represents an active production alternative when package change is feasible and the 38A rating is acceptable for the application.

Q: Are all substitute parts RoHS3 compliant?

A: All substitute parts listed—NGTG20N60L2TF1G, IXDR35N60BD1, and STGFW20V60DF—are RoHS3 compliant and REACH Unaffected, matching the main part's regulatory status.

Q: What is the significance of the operating temperature range difference in IXDR35N60BD1?

A: The IXDR35N60BD1 specifies a maximum junction temperature of 150°C, compared to 175°C for the FGAF20N60SMD. Applications requiring operation near the upper thermal limit of the main part may experience reduced thermal margin with this substitute. Circuit thermal analysis is required to confirm acceptability.

Q: Can I use STGFW20V60DF in a design originally specified for FGAF20N60SMD?

A: The STGFW20V60DF is electrically compatible within the 600V and 40A envelope. The Trench Field Stop technology may produce different switching losses and gate charge behavior. Switching energy values differ (200µJ on, 130µJ off vs. 452µJ on, 141µJ off), which affects circuit efficiency and EMI characteristics. Application-specific testing or simulation is necessary to validate performance equivalence.

Q: What inventory status should influence my substitution decision?

A: The STGFW20V60DF has the highest inventory availability (1500 Pcs), followed by NGTG20N60L2TF1G (1036 Pcs) and IXDR35N60BD1 (782 Pcs). Inventory levels may influence lead time and cost considerations, but substitution decisions must prioritize electrical and mechanical compatibility first.

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