FGA6065ADF IGBT Equivalent & Substitute Parts

Part Overview

The FGA6065ADF is an IGBT Trench Field Stop device rated for 650 V collector-emitter breakdown voltage and 120 A maximum collector current. This through-hole mounted component is housed in a TO-3PN package and delivers 306 W maximum power dissipation. The device is classified as obsolete, necessitating identification of equivalent substitute components for ongoing system support and new design implementations.

Key Parameters

Parameter	Value	Unit
IGBT Type	Trench Field Stop	—
Voltage - Collector Emitter Breakdown (Max)	650	V
Current - Collector (Ic) (Max)	120	A
Current - Collector Pulsed (Icm)	180	A
Vce(on) (Max) @ Vge, Ic	2.3 V @ 15 V, 60 A	—
Power - Max	306	W
Gate Charge	84	nC
Switching Energy (on/off)	2.46 mJ / 520 µJ	—
Td (on/off) @ 25°C	25.6 ns / 71 ns	—
Reverse Recovery Time (trr)	110	ns
Operating Temperature Range	-55 to 175	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-3P-3, SC-65-3	—
Supplier Device Package	TO-3PN	—
RoHS Status	ROHS3 Compliant	—
REACH Status	REACH Unaffected	—

Substitute Part Grouping Explanation

Substitute components for the FGA6065ADF are identified based on electrical and mechanical parameter equivalence. The substitution criteria are strictly limited to the following parameters:

Voltage rating: 650 V collector-emitter breakdown voltage
Current rating: 120 A maximum collector current
IGBT technology: Trench Field Stop architecture
On-state voltage: 2.3 V @ 15 V, 60 A
Maximum power dissipation: 306 W
Gate charge: 84 nC
Switching characteristics: 2.46 mJ (on), 520 µJ (off)
Reverse recovery time: 110 ns
Operating temperature range: -55°C to 175°C
Package type: TO-3PN through-hole configuration
Compliance certifications: ROHS3 Compliant, REACH Unaffected

The FGA6560WDF meets all specified electrical and mechanical parameters and is therefore classified as a parametric equivalent.

Parameter Comparison

Parameter	FGA6065ADF	FGA6560WDF	Match
IGBT Type	Trench Field Stop	Trench Field Stop	✓
Voltage - Collector Emitter Breakdown (Max)	650 V	650 V	✓
Current - Collector (Ic) (Max)	120 A	120 A	✓
Current - Collector Pulsed (Icm)	180 A	180 A	✓
Vce(on) (Max) @ Vge, Ic	2.3 V @ 15 V, 60 A	2.3 V @ 15 V, 60 A	✓
Power - Max	306 W	306 W	✓
Gate Charge	84 nC	84 nC	✓
Switching Energy (on/off)	2.46 mJ / 520 µJ	2.46 mJ / 520 µJ	✓
Td (on/off) @ 25°C	25.6 ns / 71 ns	25.6 ns / 71 ns	✓
Reverse Recovery Time (trr)	110 ns	110 ns	✓
Operating Temperature Range	-55 to 175 °C (TJ)	-55 to 175 °C (TJ)	✓
Mounting Type	Through Hole	Through Hole	✓
Package / Case	TO-3P-3, SC-65-3	TO-3P-3, SC-65-3	✓
Supplier Device Package	TO-3PN	TO-3PN	✓
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	✓
REACH Status	REACH Unaffected	REACH Unaffected	✓

Engineering Selection Recommendations

The FGA6560WDF is a direct parametric equivalent to the FGA6065ADF. Both devices are manufactured by onsemi and share identical electrical specifications, switching characteristics, and thermal operating ranges. Both components maintain ROHS3 compliance and REACH unaffected status, satisfying regulatory requirements for industrial and commercial applications.

The FGA6560WDF is available in significantly higher inventory (22,800 pieces) compared to the FGA6065ADF (2,167 pieces), providing improved supply chain availability for production and replacement applications. Both devices are classified as obsolete products; however, the FGA6560WDF represents the current equivalent for system maintenance and new implementations requiring 650 V, 120 A IGBT Trench Field Stop technology in TO-3PN packaging.

Frequently Asked Questions (FAQ)

Q: Can the FGA6560WDF be used as a direct replacement for the FGA6065ADF?

A: Yes. The FGA6560WDF is a parametric equivalent with identical electrical ratings, switching characteristics, gate charge, and thermal specifications. Both devices are housed in TO-3PN through-hole packages with matching pin configurations.

Q: Are there differences in the on-state voltage between these devices?

A: No. Both the FGA6065ADF and FGA6560WDF specify identical on-state voltage of 2.3 V at 15 V gate-emitter voltage and 60 A collector current.

Q: Do both devices support the same operating temperature range?

A: Yes. Both components operate across the identical temperature range of -55°C to 175°C junction temperature.

Q: What is the significance of the TO-3PN package designation?

A: The TO-3PN package is a through-hole configuration with three pins. Both devices utilize this identical package type, ensuring mechanical and electrical compatibility in existing PCB layouts and socket configurations.

Q: Are there compliance differences between the two devices?

A: No. Both the FGA6065ADF and FGA6560WDF maintain ROHS3 compliance and REACH unaffected status. Both are classified as EAR99 for export control purposes.

Q: What switching energy specifications apply to both devices?

A: Both devices exhibit identical switching energy characteristics: 2.46 mJ for turn-on and 520 µJ for turn-off, with switching delays of 25.6 ns (on) and 71 ns (off) at 25°C.

Q: Is the reverse recovery time identical between these devices?

A: Yes. Both the FGA6065ADF and FGA6560WDF specify a reverse recovery time of 110 ns under the specified test conditions.

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