FGA30N65SMD IGBT Equivalent & Substitute Parts

Part Overview

The FGA30N65SMD is an IGBT Field Stop device manufactured by onsemi, rated for 650V collector-emitter breakdown voltage and 60A maximum collector current with 300W power dissipation capability. This component features a Through Hole TO-3PN package configuration and is designed for high-voltage switching applications requiring robust thermal performance.

The FGA30N65SMD is classified as Obsolete product status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this IGBT topology.

Key Parameters

Parameter	Value	Unit
Voltage - Collector Emitter Breakdown (Max)	650	V
Current - Collector (Ic) (Max)	60	A
Current - Collector Pulsed (Icm)	90	A
Power - Max	300	W
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 30A	V
Gate Charge	87	nC
Operating Temperature Range	-55 to 175	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-3P-3, SC-65-3	—
IGBT Type	Field Stop	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the FGA30N65SMD are selected based on electrical and mechanical compatibility within the following criteria:

Voltage Rating: All substitute parts maintain the 650V collector-emitter breakdown voltage specification, ensuring compatibility with the original design voltage envelope.

Current Rating: Substitute parts are rated for 50A to 60A maximum collector current, providing equivalent or superior current handling capability to the 60A specification of the FGA30N65SMD.

Power Dissipation: Substitute parts are rated for 230W to 270W maximum power dissipation, which accommodates the 300W thermal design margin of the original component.

Operating Temperature Range: All substitute parts operate across the -55°C to 175°C junction temperature range, matching the thermal operating envelope.

Mounting Configuration: All substitute parts utilize Through Hole mounting technology, maintaining mechanical compatibility with existing PCB layouts.

Compliance Standards: All substitute parts maintain ROHS3 compliance and REACH unaffected status, ensuring regulatory alignment with the original component.

IGBT Technology: Substitute parts employ PT (Punch-Through) IGBT technology, which represents an alternative switching topology within the same voltage and current class.

Parameter Comparison

Parameter	FGA30N65SMD (Main)	IXYH20N65C3	IXYH30N65C3	IXYH30N65C3H1
Manufacturer	onsemi	IXYS	IXYS	IXYS
Voltage - Collector Emitter Breakdown (Max)	650 V	650 V	650 V	650 V
Current - Collector (Ic) (Max)	60 A	50 A	60 A	60 A
Current - Collector Pulsed (Icm)	90 A	105 A	118 A	118 A
Power - Max	300 W	230 W	270 W	270 W
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 30A	2.5V @ 15V, 20A	2.7V @ 15V, 30A	2.7V @ 15V, 30A
Gate Charge	87 nC	30 nC	44 nC	44 nC
Operating Temperature Range	-55 to 175 °C (TJ)	-55 to 175 °C (TJ)	-55 to 175 °C (TJ)	-55 to 175 °C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-3P-3, SC-65-3	TO-247-3	TO-247-3	TO-247-3
Product Status	Obsolete	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IXYH30N65C3 and IXYH30N65C3H1 Selection

The IXYH30N65C3 and IXYH30N65C3H1 represent the primary substitute options for the FGA30N65SMD. Both parts maintain identical electrical specifications at the rated operating point: 650V voltage rating, 60A maximum collector current, and -55°C to 175°C operating temperature range. Both components are manufactured by IXYS and carry Active product status, ensuring long-term supply availability and ongoing technical support. Both parts maintain ROHS3 compliance and REACH unaffected status, providing regulatory continuity with the original component.

The IXYH30N65C3H1 variant includes specified reverse recovery time (trr) of 120ns, providing additional switching characterization data for applications requiring detailed transient analysis.

IXYH20N65C3 Selection

The IXYH20N65C3 is a secondary substitute option suitable for applications where the 60A current requirement can be reduced to 50A maximum collector current. This part maintains the 650V voltage rating and -55°C to 175°C operating temperature range. The IXYH20N65C3 features reduced gate charge (30nC versus 87nC in the FGA30N65SMD), resulting in lower switching losses and faster gate response characteristics. This part is manufactured by IXYS with Active product status and maintains ROHS3 compliance.

Package Consideration

All substitute parts utilize TO-247-3 package configuration, which differs from the TO-3P-3 package of the FGA30N65SMD. PCB layout modifications are required to accommodate the different pin configuration and thermal interface geometry of the TO-247 package.

Frequently Asked Questions (FAQ)

Q: Can the IXYH20N65C3 directly replace the FGA30N65SMD in all applications?

A: The IXYH20N65C3 is suitable for applications where the maximum collector current requirement does not exceed 50A. The FGA30N65SMD is rated for 60A maximum collector current. Applications requiring the full 60A capability must utilize IXYH30N65C3 or IXYH30N65C3H1 substitutes.

Q: What are the package differences between the FGA30N65SMD and substitute parts?

A: The FGA30N65SMD utilizes TO-3P-3 package configuration. All substitute parts (IXYH20N65C3, IXYH30N65C3, IXYH30N65C3H1) utilize TO-247-3 package configuration. These packages have different pin layouts, lead spacing, and thermal interface geometries. PCB redesign is required to accommodate the package change.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. The FGA30N65SMD and all three substitute parts (IXYH20N65C3, IXYH30N65C3, IXYH30N65C3H1) are ROHS3 compliant and REACH unaffected, ensuring regulatory alignment.

Q: What is the difference between IXYH30N65C3 and IXYH30N65C3H1?

A: Both parts maintain identical electrical specifications at rated operating conditions: 650V voltage rating, 60A maximum collector current, 270W power dissipation, and -55°C to 175°C operating temperature range. The IXYH30N65C3H1 includes specified reverse recovery time (trr) of 120ns. Both parts are manufactured by IXYS with Active product status.

Q: Why is the FGA30N65SMD classified as Obsolete?

A: The FGA30N65SMD is classified as Obsolete by onsemi. Substitute parts with Active product status (IXYH20N65C3, IXYH30N65C3, IXYH30N65C3H1) ensure continued availability and technical support for new designs and ongoing production requirements.

Q: Do the substitute parts have lower gate charge than the FGA30N65SMD?

A: The IXYH20N65C3 features gate charge of 30nC, which is lower than the FGA30N65SMD specification of 87nC. The IXYH30N65C3 and IXYH30N65C3H1 feature gate charge of 44nC, which is also lower than the FGA30N65SMD. Lower gate charge results in reduced switching losses and faster gate response characteristics.

Q: Are the operating temperature ranges identical across all parts?

A: Yes. The FGA30N65SMD and all substitute parts (IXYH20N65C3, IXYH30N65C3, IXYH30N65C3H1) operate across the -55°C to 175°C junction temperature range.

Q: What is the voltage rating consistency across all parts?

A: All parts maintain 650V maximum collector-emitter breakdown voltage specification, ensuring compatibility with the original design voltage envelope.

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