FFSPF2065A Equivalent & Substitute Parts

Part Overview

The FFSPF2065A is a Silicon Carbide (SiC) Schottky diode rated for 650 V DC reverse voltage with 20 A average rectified current in a Through Hole TO-220F-2FS package. Manufactured by onsemi, this component is classified as obsolete product status. Identification of equivalent and substitute parts is necessary to maintain design continuity and ensure supply chain availability for applications requiring SiC Schottky rectification at this voltage and current rating.

Substiute Parts

FFSPF2065A
onsemiIn Stock: 1639FFSPF2065A Datasheet
FFSPF2065A
Current Part
FFSP2065B
onsemiIn Stock: 1590FFSP2065B Datasheet
FFSP2065B
MFR Recommended

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 20 A
Technology SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 200 µA @ 650 V
Operating Temperature - Junction -55 to 175 °C
Mounting Type Through Hole
Package / Case TO-220-2
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the FFSPF2065A is determined by the following critical parameters:

  1. Voltage Rating: The substitute part must maintain the 650 V DC reverse voltage specification to ensure safe operation within the same circuit topology.

  2. Current Rating: The substitute part must support a minimum average rectified current equal to or exceeding the 20 A requirement of the original design.

  3. Technology: Both the main part and substitute utilize SiC (Silicon Carbide) Schottky technology, ensuring identical switching characteristics and zero reverse recovery time.

  4. Mounting and Package: Through Hole mounting with TO-220-2 package compatibility ensures mechanical and thermal interface compatibility.

  5. Temperature Range: Operating junction temperature range of -55°C to 175°C must be maintained.

  6. Regulatory Compliance: RoHS3 compliance and REACH unaffected status must be preserved.

The FFSP2065B qualifies as a direct substitute based on these parameters. It maintains identical voltage and temperature specifications while providing enhanced current capacity (22.5 A versus 20 A) and improved reverse leakage characteristics.

Parameter Comparison

Parameter FFSPF2065A (Main Part) FFSP2065B (Substitute) Unit
Manufacturer onsemi onsemi
Category Diodes, Rectifiers Diodes, Rectifiers
Technology SiC (Silicon Carbide) Schottky SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 650 V
Current - Average Rectified (Io) 20 22.5 A
Reverse Recovery Time (trr) 0 0 ns
Current - Reverse Leakage @ Vr 200 40 µA @ 650 V
Capacitance @ 1V, 100kHz 1085 866 pF
Mounting Type Through Hole Through Hole
Package / Case TO-220-2 TO-220-2
Operating Temperature - Junction -55 to 175 -55 to 175 °C
Product Status Obsolete Active
RoHS Status ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

The FFSP2065B is the designated manufacturer-recommended substitute for the obsolete FFSPF2065A. Selection of this substitute is supported by the following engineering factors:

  1. Product Status Alignment: The FFSP2065B maintains Active product status, ensuring continued availability and manufacturer support, whereas the FFSPF2065A is classified as Obsolete.

  2. Electrical Compatibility: Both parts share identical 650 V DC reverse voltage and -55°C to 175°C operating temperature specifications. The FFSP2065B provides 22.5 A current capacity, which exceeds the 20 A requirement of the original design, offering design margin.

  3. Regulatory Compliance: Both parts maintain ROHS3 compliance and REACH unaffected status, satisfying environmental and regulatory requirements without modification.

  4. Thermal and Mechanical Interface: Both parts utilize identical Through Hole mounting in TO-220-2 package configuration, ensuring direct mechanical and thermal compatibility without PCB redesign.

  5. Performance Characteristics: The FFSP2065B demonstrates improved reverse leakage current (40 µA versus 200 µA at 650 V), indicating enhanced device quality and reduced power dissipation in reverse bias conditions.

Frequently Asked Questions (FAQ)

Q: Can the FFSP2065B directly replace the FFSPF2065A without PCB modification?

A: Yes. Both parts utilize identical Through Hole mounting and TO-220-2 package configuration. No PCB layout changes are required for mechanical or thermal interface compatibility.

Q: What is the significance of the higher current rating (22.5 A) in the FFSP2065B?

A: The FFSP2065B current rating of 22.5 A exceeds the original 20 A specification. This provides design margin and allows the substitute to operate at lower junction temperatures under identical load conditions, extending component lifetime.

Q: Are there differences in switching performance between these parts?

A: Both parts exhibit zero reverse recovery time (trr = 0 ns) characteristic of SiC Schottky technology. Switching performance is equivalent. The FFSP2065B exhibits lower junction capacitance (866 pF versus 1085 pF at 1V, 100kHz), which may provide marginal improvements in high-frequency switching applications.

Q: Why is the FFSPF2065A classified as Obsolete?

A: Product status reflects manufacturer lifecycle decisions. The FFSP2065B represents the current production equivalent with enhanced specifications and continued manufacturer support.

Q: Are regulatory certifications maintained with this substitution?

A: Yes. Both parts maintain ROHS3 compliance and REACH unaffected status. No regulatory re-qualification is required for applications previously qualified with the FFSPF2065A.

Q: What is the difference between the TO-220F-2FS and TO-220-2 package designations?

A: Both designations refer to the same physical Through Hole TO-220-2 package form factor. The "F" and "FS" suffixes in the FFSPF2065A designation indicate manufacturer-specific packaging variants. The FFSP2065B uses the standard TO-220-2 designation. Mechanical and thermal characteristics are equivalent.

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