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FFSPF1065A Silicon Carbide Schottky Diode Equivalent & Substitute Parts
Part Overview
The FFSPF1065A is a silicon carbide Schottky diode manufactured by onsemi, rated for 650 V DC reverse voltage and 10 A average rectified current in a TO-220F-2FS through-hole package. This component is classified as obsolete, necessitating identification of active equivalent and substitute parts for ongoing design requirements and procurement needs. The diode features zero reverse recovery time and operates across a junction temperature range of -55°C to 175°C, making it suitable for high-frequency switching applications requiring minimal switching losses.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 650 | V |
| Current - Average Rectified (Io) | 10 | A |
| Reverse Recovery Time (trr) | 0 | ns |
| Current - Reverse Leakage @ Vr | 200 | µA @ 650 V |
| Capacitance @ Vr, F | 575 | pF @ 1V, 100kHz |
| Operating Temperature - Junction | -55 to 175 | °C |
| Technology | SiC (Silicon Carbide) Schottky | — |
| Mounting Type | Through Hole | — |
| Package / Case | TO-220-2 Full Pack | — |
| RoHS Status | ROHS3 Compliant | — |
Substitute Part Grouping Explanation
Substitution of the FFSPF1065A is determined by equivalence in the following critical parameters: voltage rating (650 V DC reverse), current capacity (10 A or higher average rectified current), technology platform (SiC Schottky), mounting type (through hole), and thermal operating range (-55°C to 175°C). The reverse recovery time of 0 ns is a defining characteristic of silicon carbide technology and is maintained across all substitute parts.
Two substitute parts are identified:
FFSP1065B (onsemi): Manufacturer-recommended substitute with identical voltage rating, increased current capacity (11 A), same technology, and active product status. Package variant is TO-220-2 (non-isolated tab configuration).
SICRF10650 (SMC Diode Solutions): Similar substitute with matching voltage and current ratings, same technology, and active product status. Package variant is ITO-220AC (isolated tab configuration).
Both substitutes maintain the 650 V voltage specification, zero reverse recovery time, and -55°C to 175°C operating temperature range required for functional equivalence.
Parameter Comparison
| Parameter | FFSPF1065A (Main) | FFSP1065B (Substitute) | SICRF10650 (Substitute) |
|---|---|---|---|
| Manufacturer | onsemi | onsemi | SMC Diode Solutions |
| Voltage - DC Reverse (Vr) (Max) | 650 V | 650 V | 650 V |
| Current - Average Rectified (Io) | 10 A | 11 A | 10 A |
| Voltage - Forward (Vf) (Max) @ If | Not specified | 1.7 V @ 10 A | 1.7 V @ 10 A |
| Reverse Recovery Time (trr) | 0 ns | 0 ns | 0 ns |
| Current - Reverse Leakage @ Vr | 200 µA @ 650 V | 40 µA @ 650 V | 100 µA @ 650 V |
| Capacitance @ Vr, F | 575 pF @ 1V, 100kHz | 421 pF @ 1V, 100kHz | 695 pF @ 0V, 1MHz |
| Operating Temperature - Junction | -55 to 175 °C | -55 to 175 °C | -55 to 175 °C |
| Technology | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky |
| Mounting Type | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-2 Full Pack | TO-220-2 | TO-220-2 Full Pack, Isolated Tab |
| Product Status | Obsolete | Active | Active |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
Engineering Selection Recommendations
FFSP1065B Selection: This part is the manufacturer-recommended substitute from onsemi. It maintains identical voltage and temperature specifications while providing increased current capacity (11 A versus 10 A). The part is in active production status, ensuring long-term availability and supply chain stability. ROHS3 compliance is maintained. The TO-220-2 package (non-isolated tab) differs from the FFSPF1065A's TO-220F-2FS configuration; PCB layout and thermal management design must accommodate this package variant. Lower reverse leakage current (40 µA versus 200 µA) and reduced capacitance (421 pF versus 575 pF) represent improved performance characteristics.
SICRF10650 Selection: This part provides functional equivalence with matching voltage and current ratings from an alternative manufacturer (SMC Diode Solutions). Active product status ensures availability. The ITO-220AC package features an isolated tab configuration, which may require PCB design modifications compared to the standard TO-220-2 layout. Higher capacitance (695 pF) and intermediate reverse leakage current (100 µA) should be evaluated against circuit performance requirements. ROHS3 compliance is maintained; however, REACH status is listed as affected, requiring verification of regulatory compliance for specific end-use applications.
Both substitutes are suitable for direct functional replacement based on voltage, current, and thermal operating range equivalence. Package and thermal interface design changes are required for either substitute.
Frequently Asked Questions (FAQ)
Q: Can FFSP1065B directly replace FFSPF1065A without PCB modifications?
A: Electrical specifications are compatible; however, the package designation differs (TO-220-2 versus TO-220F-2FS). The TO-220F-2FS includes a full pack (isolated) configuration, while TO-220-2 is standard. PCB footprint and thermal interface design must be verified for compatibility. Mechanical mounting and heat dissipation characteristics may differ.
Q: What is the significance of the isolated tab in the SICRF10650 (ITO-220AC) package?
A: The isolated tab configuration (ITO-220AC) electrically isolates the mounting tab from the diode terminals, eliminating the need for an insulating washer in applications where the tab is mounted to a heat sink. This differs from standard TO-220-2 packages where the tab is electrically connected. Circuit design and PCB layout must account for this difference.
Q: Are all three parts ROHS3 compliant?
A: Yes, FFSPF1065A, FFSP1065B, and SICRF10650 are all ROHS3 compliant. The SICRF10650 is listed as REACH affected, requiring verification of regulatory compliance for specific jurisdictions and end-use applications.
Q: How do reverse leakage current differences affect circuit performance?
A: The FFSP1065B exhibits lower reverse leakage (40 µA) compared to the FFSPF1065A (200 µA) and SICRF10650 (100 µA). Lower leakage reduces standby power dissipation and improves circuit efficiency. Circuit design should evaluate whether the specified leakage current of the original part is a critical parameter or if improved performance is acceptable.
Q: What is the impact of capacitance variation among the three parts?
A: Capacitance values differ: FFSPF1065A (575 pF @ 1V, 100kHz), FFSP1065B (421 pF @ 1V, 100kHz), and SICRF10650 (695 pF @ 0V, 1MHz). Lower capacitance reduces switching losses and improves high-frequency performance. Measurement conditions differ between parts (voltage and frequency), requiring direct comparison only when normalized to identical test conditions. Circuit performance in switching applications may be affected by these variations.
Q: Is the increased current rating of FFSP1065B (11 A versus 10 A) a limiting factor?
A: No. The increased current rating provides additional design margin and does not create compatibility issues. The part can operate at or below the original 10 A specification without derating or performance degradation.
Q: What inventory status should influence part selection?
A: FFSPF1065A is obsolete with 1692 pieces in stock. FFSP1065B and SICRF10650 are both active products with 1712 and 1002 pieces in stock, respectively. Long-term availability and supply chain continuity favor selection of active products (FFSP1065B or SICRF10650) over the obsolete FFSPF1065A.
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