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FFSPF0665A SiC Schottky Diode Equivalent & Substitute Parts
Part Overview
The FFSPF0665A is a Silicon Carbide (SiC) Schottky diode manufactured by onsemi, rated for 650 V DC reverse voltage and 6 A average rectified current in a Through Hole TO-220F-2FS package. This component is classified as obsolete product status. Due to its obsolete designation, equivalent and substitute parts from active product lines are necessary to maintain design continuity and ensure long-term supply chain reliability for new designs and production requirements.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 650 | V |
| Current - Average Rectified (Io) | 6 | A |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 6 A | V |
| Reverse Recovery Time (trr) | 0 | ns |
| Current - Reverse Leakage @ Vr | 200 | µA @ 650 V |
| Technology | SiC (Silicon Carbide) Schottky | — |
| Mounting Type | Through Hole | — |
| Operating Temperature - Junction | -55 to 175 | °C |
| RoHS Status | ROHS3 Compliant | — |
Substitute Part Grouping Explanation
Substitution of the FFSPF0665A is determined by the following critical electrical and mechanical parameters:
Primary Substitution Criteria:
- Voltage rating: 650 V DC reverse voltage (Vr) minimum
- Current rating: Equal to or greater than 6 A average rectified current (Io)
- Technology: SiC (Silicon Carbide) Schottky diode
- Mounting: Through Hole configuration
- Temperature range: -55°C to 175°C junction operating temperature
- Compliance: ROHS3 compliant
Substitution Logic: Parts are grouped as direct equivalents when all primary criteria are met. The FFSP0665B qualifies as a manufacturer-recommended substitute with identical voltage and temperature specifications, higher current rating (8 A), and active product status. The SICRF6650 qualifies as a similar substitute with matching voltage, current, and temperature specifications, though with different package designation (ITO-220AC versus TO-220F-2FS) and REACH status classification.
Parameter Comparison
| Parameter | FFSPF0665A (Main) | FFSP0665B (MFR Recommended) | SICRF6650 (Similar) |
|---|---|---|---|
| Manufacturer | onsemi | onsemi | SMC Diode Solutions |
| Product Status | Obsolete | Active | Active |
| Voltage - DC Reverse (Vr) (Max) | 650 V | 650 V | 650 V |
| Current - Average Rectified (Io) | 6 A | 8 A | 6 A |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 6 A | 1.7 V @ 6 A | 1.8 V @ 6 A |
| Reverse Recovery Time (trr) | 0 ns | 0 ns | 0 ns |
| Current - Reverse Leakage @ Vr | 200 µA @ 650 V | 40 µA @ 650 V | 50 µA @ 650 V |
| Capacitance @ Vr, F | 361 pF @ 1V, 100kHz | 259 pF @ 1V, 100kHz | 150 pF @ 5V, 1MHz |
| Mounting Type | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-2 Full Pack | TO-220-2 | TO-220-2 Full Pack, Isolated Tab |
| Operating Temperature - Junction | -55 to 175°C | -55 to 175°C | -55 to 175°C |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| REACH Status | REACH Unaffected | REACH Unaffected | REACH Affected |
Engineering Selection Recommendations
FFSP0665B (onsemi) - Manufacturer Recommended Substitute: The FFSP0665B is the primary substitute for the obsolete FFSPF0665A. Both components are manufactured by onsemi and share identical voltage and temperature specifications. The FFSP0665B provides superior electrical performance with higher current rating (8 A versus 6 A), lower reverse leakage current (40 µA versus 200 µA), and reduced junction capacitance (259 pF versus 361 pF). The FFSP0665B maintains active product status, ROHS3 compliance, and REACH Unaffected classification. The package designation differs (TO-220-2 versus TO-220F-2FS), requiring mechanical verification for PCB layout compatibility.
SICRF6650 (SMC Diode Solutions) - Similar Substitute: The SICRF6650 provides electrical equivalence with matching voltage, current, and temperature specifications. This component is manufactured by SMC Diode Solutions and maintains active product status with ROHS3 compliance. The SICRF6650 features an isolated tab package variant (ITO-220AC) and carries REACH Affected classification. Forward voltage is marginally higher (1.8 V versus 1.75 V), and reverse leakage current is lower (50 µA versus 200 µA). The isolated tab configuration requires verification against circuit isolation requirements and PCB thermal design.
Frequently Asked Questions (FAQ)
Q: Can the FFSP0665B directly replace the FFSPF0665A in existing designs?
A: The FFSP0665B provides electrical substitution with superior performance characteristics. However, the package designation change from TO-220F-2FS to TO-220-2 requires mechanical verification. PCB footprint, thermal interface design, and mounting hardware compatibility must be confirmed before implementation.
Q: What is the significance of the higher current rating in the FFSP0665B?
A: The FFSP0665B is rated for 8 A average rectified current compared to the FFSPF0665A's 6 A rating. This higher rating provides additional design margin and thermal headroom. Designs operating at or near the 6 A specification of the original part benefit from the increased current capacity without requiring circuit modifications.
Q: How do reverse leakage current differences affect circuit performance?
A: The FFSP0665B exhibits significantly lower reverse leakage current (40 µA at 650 V) compared to the FFSPF0665A (200 µA at 650 V). Lower leakage current reduces standby power dissipation and improves circuit efficiency. The SICRF6650 provides intermediate leakage performance (50 µA at 650 V). These differences are material for low-power or battery-operated applications.
Q: What does the isolated tab designation (ITO-220AC) in the SICRF6650 mean?
A: The isolated tab configuration in the SICRF6650 provides electrical isolation between the mounting tab and the diode cathode. This feature is required in circuits where the tab must be isolated from the cathode potential. Standard TO-220-2 packages do not provide this isolation. Circuit design requirements determine whether isolation is necessary.
Q: Are there compliance differences between the substitute parts?
A: All three parts maintain ROHS3 compliance. The FFSP0665A and FFSP0665B are REACH Unaffected, while the SICRF6650 is REACH Affected. REACH Affected status indicates the component contains substances of concern and requires compliance documentation for certain applications and markets. Regulatory requirements for the target application determine the acceptability of REACH Affected components.
Q: How do capacitance specifications differ, and does this matter?
A: The FFSPF0665A exhibits 361 pF capacitance at 1 V and 100 kHz, the FFSP0665B shows 259 pF at the same conditions, and the SICRF6650 provides 150 pF at 5 V and 1 MHz. Lower capacitance reduces switching losses and improves high-frequency performance. Designs operating at elevated switching frequencies benefit from the reduced capacitance of the FFSP0665B and SICRF6650.
Q: What is the practical difference between 0 ns reverse recovery time across all parts?
A: All three parts exhibit zero reverse recovery time, characteristic of SiC Schottky diode technology. This eliminates reverse recovery losses present in conventional silicon diodes, resulting in improved efficiency and reduced electromagnetic interference. This parameter is identical across all substitutes and does not differentiate selection.
Q: Can the SICRF6650 be used in applications requiring REACH Unaffected status?
A: No. The SICRF6650 carries REACH Affected classification, which restricts its use in applications or markets with strict REACH compliance requirements. The FFSP0665B is the appropriate choice for applications requiring REACH Unaffected status while maintaining onsemi manufacturer support.
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