FFSP4065BDN-F085 Equivalent & Substitute Parts

Part Overview

The FFSP4065BDN-F085 is a Silicon Carbide (SiC) Schottky diode rated for 650 V DC reverse voltage and 20 A average rectified current in a TO-220-3 through-hole package. Manufactured by onsemi, this component is AEC-Q101 qualified for automotive applications and maintains active product status. Substitute parts are identified based on electrical parameter equivalence and mechanical compatibility within the 650 V / 20 A rectifier diode category.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	650	V
Current - Average Rectified (Io)	20	A
Voltage - Forward (Vf) (Max) @ If	1.7 @ 20 A	V
Reverse Recovery Time (trr)	0	ns
Current - Reverse Leakage @ Vr	40	µA @ 650 V
Operating Temperature - Junction	-55 to 175	°C
Technology	SiC (Silicon Carbide) Schottky	—
Package / Case	TO-220-3	—
Mounting Type	Through Hole	—
Grade	Automotive	—
Qualification	AEC-Q101	—

Substitute Part Grouping Explanation

Substitute parts for the FFSP4065BDN-F085 are selected based on electrical parameter equivalence within the 650 V / 20 A SiC Schottky diode category. The critical parameters determining substitution eligibility are:

Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Operating Temperature - Junction: -55°C to 175°C

Substitute parts maintain identical electrical ratings and thermal operating range. Package differences (TO-220-3 versus TO-247-3) are noted as mechanical variations that may affect board layout and thermal management characteristics but do not alter electrical performance within the specified parameters.

Parameter Comparison

Parameter	FFSP4065BDN-F085 (Main)	FFSH4065BDN-F085	IDW20G65C5XKSA1	IDW40G65C5BXKSA2
Manufacturer	onsemi	onsemi	Infineon Technologies	Infineon Technologies
Voltage - DC Reverse (Vr) (Max)	650 V	650 V	650 V	650 V
Current - Average Rectified (Io)	20 A	20 A	20 A	20 A
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 20 A	1.7 V @ 20 A	1.7 V @ 20 A	1.7 V @ 20 A
Reverse Recovery Time (trr)	0 ns	0 ns	0 ns	0 ns
Current - Reverse Leakage @ Vr	40 µA @ 650 V	40 µA @ 650 V	210 µA @ 650 V	210 µA @ 650 V
Operating Temperature - Junction	-55 to 175°C	-55 to 175°C	-55 to 175°C	-55 to 175°C
Technology	SiC Schottky	SiC Schottky	SiC Schottky	SiC Schottky
Package / Case	TO-220-3	TO-247-3	TO-247-3	TO-247-3
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Product Status	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

All substitute parts maintain active product status and full compliance with ROHS3 and REACH regulations. Selection between the FFSP4065BDN-F085 and its substitutes depends on application-specific requirements:

FFSH4065BDN-F085 (onsemi): Identical electrical specifications and reverse leakage characteristics to the main part. Differs only in package format (TO-247-3 versus TO-220-3). Maintains AEC-Q101 automotive qualification. Suitable for applications where TO-247-3 package dimensions and thermal characteristics are compatible with board layout.

IDW20G65C5XKSA1 and IDW40G65C5BXKSA2 (Infineon Technologies): Both parts maintain 650 V / 20 A electrical ratings and zero reverse recovery time. Reverse leakage current is 210 µA at 650 V, compared to 40 µA for onsemi parts. Both use TO-247-3 package format. CoolSiC™+ series designation indicates Infineon's product line classification. Moisture Sensitivity Level (MSL) is 1 (Unlimited) for both Infineon parts.

All four parts are suitable for automotive-grade applications and maintain identical operating temperature range (-55°C to 175°C junction temperature).

Frequently Asked Questions (FAQ)

Q: Can FFSH4065BDN-F085 directly replace FFSP4065BDN-F085 on the same PCB?

A: Electrical parameters are identical. However, FFSH4065BDN-F085 uses TO-247-3 package while FFSP4065BDN-F085 uses TO-220-3 package. Physical footprint and pin layout differ. PCB redesign is required for mechanical compatibility.

Q: What is the difference between the onsemi and Infineon substitute parts?

A: All parts meet 650 V / 20 A electrical specifications. The primary difference is reverse leakage current: onsemi parts (FFSP4065BDN-F085 and FFSH4065BDN-F085) specify 40 µA at 650 V, while Infineon parts (IDW20G65C5XKSA1 and IDW40G65C5BXKSA2) specify 210 µA at 650 V. Both values are within acceptable ranges for SiC Schottky diodes in this voltage and current class.

Q: Are all substitute parts AEC-Q101 qualified?

A: FFSP4065BDN-F085 and FFSH4065BDN-F085 carry explicit AEC-Q101 automotive qualification. Qualification status for Infineon IDW20G65C5XKSA1 and IDW40G65C5BXKSA2 is not provided in the available parameters.

Q: What is the significance of the TO-247-3 package used by substitute parts?

A: TO-247-3 is a through-hole package with larger physical dimensions and improved thermal characteristics compared to TO-220-3. It provides better heat dissipation but requires different PCB footprint and mounting hardware.

Q: Can these parts be used interchangeably in high-temperature applications?

A: All parts maintain identical operating temperature range (-55°C to 175°C junction temperature). Thermal performance differences between TO-220-3 and TO-247-3 packages may affect junction temperature rise under load, depending on heatsinking and board layout.

Q: What does zero reverse recovery time (trr = 0 ns) indicate?

A: Zero reverse recovery time is characteristic of SiC Schottky diodes. This indicates negligible charge storage and switching transients compared to silicon-based rectifiers, resulting in reduced electromagnetic interference and improved efficiency in switching applications.

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