FFSH4065ADN-F155 Equivalent & Substitute Parts

Part Overview

The FFSH4065ADN-F155 is a Silicon Carbide Schottky diode array manufactured by onsemi, configured as a 1 Pair Common Cathode arrangement. This through-hole component operates at 650 V DC reverse voltage with 22 A average rectified current per diode and is housed in a TO-247-3 package. The part is currently active in production with 1094 units in stock.

Substitute parts are identified to provide design flexibility when the primary part is unavailable, when inventory constraints exist, or when alternative sourcing is required while maintaining electrical and mechanical compatibility within specified parameters.

Substiute Parts

FFSH4065ADN-F155
onsemiIn Stock: 1107FFSH4065ADN-F155 Datasheet
FFSH4065ADN-F155
Current Part
PCDH4065CCG1_T0_00601
Panjit International Inc.In Stock: 2678PCDH4065CCG1_T0_00601 Datasheet
PCDH4065CCG1_T0_00601
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Key Parameters

Parameter Value Unit
Diode Configuration 1 Pair Common Cathode
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) (per Diode) 22 A (DC)
Voltage - Forward (Vf) (Max) @ If 1.75 @ 20 V @ A
Reverse Recovery Time (trr) 0 ns
Operating Temperature - Junction -55 to 175 °C
Mounting Type Through Hole
Package / Case TO-247-3
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the FFSH4065ADN-F155 is determined by strict equivalence across the following critical parameters:

Mandatory Equivalence Parameters:

  • Diode Configuration: 1 Pair Common Cathode
  • Technology: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3

Allowable Variation Parameters:

  • Current - Average Rectified (Io) (per Diode): Substitute must meet or exceed 20 A (DC) minimum
  • Voltage - Forward (Vf) (Max) @ If: Substitute must not exceed 1.75 V @ 20 A
  • Reverse Recovery Time (trr): 0 ns (no recovery time specification)
  • Operating Temperature - Junction: Must span -55°C to 175°C minimum
  • Current - Reverse Leakage @ Vr: Lower values indicate improved performance

The PCDH4065CCG1_T0_00601 qualifies as a substitute based on these criteria.

Parameter Comparison

Parameter FFSH4065ADN-F155 (onsemi) PCDH4065CCG1_T0_00601 (Panjit) Compatibility
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode Equivalent
Technology SiC (Silicon Carbide) Schottky SiC (Silicon Carbide) Schottky Equivalent
Voltage - DC Reverse (Vr) (Max) 650 V 650 V Equivalent
Current - Average Rectified (Io) (per Diode) 22 A (DC) 20 A (DC) Substitute meets minimum requirement
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 20 A 1.7 V @ 20 A Substitute performs better
Reverse Recovery Time (trr) 0 ns 0 ns Equivalent
Current - Reverse Leakage @ Vr 200 µA @ 650 V 120 µA @ 650 V Substitute performs better
Operating Temperature - Junction -55°C to 175°C -55°C to 175°C Equivalent
Mounting Type Through Hole Through Hole Equivalent
Package / Case TO-247-3 TO-247-3 Equivalent
RoHS Status ROHS3 Compliant Not specified Primary part compliant
REACH Status REACH Unaffected REACH Unaffected Equivalent

Engineering Selection Recommendations

Primary Part: FFSH4065ADN-F155

Select the FFSH4065ADN-F155 when:

  • ROHS3 compliance is a mandatory design requirement
  • The 22 A current rating is required for the application
  • onsemi supply chain qualification is specified
  • Current inventory availability is critical

Substitute Part: PCDH4065CCG1_T0_00601

The PCDH4065CCG1_T0_00601 from Panjit International Inc. is electrically and mechanically compatible with the FFSH4065ADN-F155. This substitute is suitable when:

  • The application current requirement is 20 A or less
  • Alternative sourcing from Panjit is acceptable
  • The improved forward voltage (1.7 V vs. 1.75 V) and reduced reverse leakage (120 µA vs. 200 µA) provide performance benefits
  • REACH compliance is required (both parts are REACH Unaffected)

Both parts share identical voltage ratings, package configuration, mounting type, and operating temperature range. The substitute part demonstrates superior electrical characteristics in forward voltage drop and reverse leakage current.

Frequently Asked Questions (FAQ)

Q: Can the PCDH4065CCG1_T0_00601 be used in place of the FFSH4065ADN-F155 in all applications?

A: The PCDH4065CCG1_T0_00601 is compatible with applications requiring 20 A or less per diode. If the application requires the full 22 A rating of the FFSH4065ADN-F155, the substitute is not suitable. Both parts operate at identical 650 V reverse voltage and share the same TO-247-3 package footprint.

Q: Are there any package differences between these parts?

A: Both parts use the TO-247-3 package for through-hole mounting. The FFSH4065ADN-F155 specifies TO-247-3, while the PCDH4065CCG1_T0_00601 specifies TO-247AD as the supplier device package. These designations refer to the same physical package standard and are mechanically and electrically interchangeable.

Q: What is the difference in forward voltage performance?

A: The PCDH4065CCG1_T0_00601 exhibits a maximum forward voltage of 1.7 V at 20 A, compared to 1.75 V at 20 A for the FFSH4065ADN-F155. This 0.05 V difference results in lower power dissipation in the substitute part.

Q: How do the reverse leakage currents compare?

A: The FFSH4065ADN-F155 specifies 200 µA reverse leakage at 650 V, while the PCDH4065CCG1_T0_00601 specifies 120 µA at the same voltage. The lower leakage current in the substitute indicates improved reverse blocking characteristics.

Q: Are both parts RoHS compliant?

A: The FFSH4065ADN-F155 is ROHS3 compliant. RoHS compliance status is not specified for the PCDH4065CCG1_T0_00601 in the provided data. Both parts are REACH Unaffected.

Q: What is the temperature operating range for both parts?

A: Both the FFSH4065ADN-F155 and PCDH4065CCG1_T0_00601 operate across a junction temperature range of -55°C to 175°C, providing identical thermal performance specifications.

Q: Can these parts be used in high-frequency switching applications?

A: Both parts feature 0 ns reverse recovery time, indicating they are optimized for fast switching applications. The SiC Schottky technology in both devices supports high-frequency operation without recovery time delays.

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