FFPF04H60STU Equivalent & Substitute Parts

Part Overview

The FFPF04H60STU is a general-purpose avalanche diode rated for 600 V DC reverse voltage and 4 A average rectified current, manufactured by onsemi in a TO-220-2 Full Pack through-hole package. This component is classified as obsolete, indicating that direct procurement may become unavailable. Identifying equivalent and substitute parts ensures design continuity and supply chain reliability for applications requiring 600 V rectification at comparable or higher current ratings.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	600	V
Current - Average Rectified (Io)	4	A
Voltage - Forward (Vf) (Max) @ If	2.1 @ 4 A	V
Reverse Recovery Time (trr)	45	ns
Current - Reverse Leakage @ Vr	100	µA @ 600 V
Speed Classification	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Mounting Type	Through Hole	—
Package / Case	TO-220-2 Full Pack	—
Operating Temperature - Junction	-65 to 150	°C
Technology	Avalanche	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the FFPF04H60STU is determined by the following critical parameters:

Mandatory Compatibility Criteria:

Voltage - DC Reverse (Vr) (Max): Must equal or exceed 600 V
Mounting Type: Must be Through Hole
Package / Case: Must be TO-220-2 Full Pack or compatible TO-220 variant
Speed Classification: Must support Fast Recovery ≤ 500ns, > 200mA (Io)

Current Rating Consideration:

Current - Average Rectified (Io): Substitute parts rated at 4 A or higher are acceptable, as higher current ratings provide design margin and component availability

Secondary Parameters:

Reverse Recovery Time (trr): Lower values indicate improved switching performance
Forward Voltage (Vf): Lower values reduce power dissipation
Operating Temperature Range: Extended ranges provide thermal design flexibility

Substitute parts are grouped by current rating and manufacturer to facilitate selection based on availability and thermal requirements.

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) [V]	trr [ns]	Ir @ Vr [µA]	Package	Tj (Max) [°C]	Status
FFPF04H60STU	onsemi	600	4	2.1 @ 4 A	45	100 @ 600 V	TO-220-2	150	Obsolete
BYV25X-600,127	WeEn Semiconductors	600	5	1.3 @ 5 A	60	50 @ 600 V	TO-220-2	150	Active
MURF860G	onsemi	600	8	1.5 @ 8 A	60	10 @ 600 V	TO-220-2	175	Active
BYC8X-600P,127	WeEn Semiconductors	600	8	1.9 @ 8 A	18	20 @ 600 V	TO-220-2	175	Active
STTH12R06FP	STMicroelectronics	600	12	2.9 @ 12 A	45	45 @ 600 V	TO-220-2	175	Active
STTH12S06FP	STMicroelectronics	600	12	3.4 @ 12 A	21	30 @ 600 V	TO-220-2	175	Active
MURF1560G	onsemi	600	15	1.5 @ 15 A	60	10 @ 600 V	TO-220-2	175	Active
STTH15AC06FP	STMicroelectronics	600	15	1.9 @ 15 A	55	2 @ 600 V	TO-220-2	175	Active
IDV15E65D2XKSA1	Infineon Technologies	650	15	2.2 @ 15 A	47	40 @ 650 V	TO-220-2	175	Active
BYC20X-600PQ	WeEn Semiconductors	600	20	2.5 @ 20 A	35	10 @ 600 V	TO-220-2	175	Active
MSRF860G	onsemi	600	8	1.7 @ 8 A	120	10 @ 600 V	TO-220-2	150	Obsolete

Engineering Selection Recommendations

Primary Substitutes (Active Status, Extended Temperature Range):

The MURF860G, MURF1560G, STTH12R06FP, STTH12S06FP, STTH15AC06FP, and BYC20X-600PQ are recommended as primary substitutes. All are classified as active products with operating temperature ranges extending to 175°C, providing superior thermal design margin compared to the obsolete FFPF04H60STU. These parts maintain 600 V reverse voltage rating and support fast recovery switching characteristics.

Secondary Substitutes (Active Status, Equivalent Temperature Range):

The BYV25X-600,127 and BYC8X-600P,127 are active products with 150°C maximum junction temperature, matching the thermal specification of the original part. These options provide current ratings of 5 A and 8 A respectively, suitable for applications with moderate current requirements.

Higher Voltage Alternative:

The IDV15E65D2XKSA1 from Infineon Technologies provides 650 V reverse voltage rating with 15 A current capacity. This part is suitable for applications requiring additional voltage margin and is ROHS3 compliant.

Avoid:

The MSRF860G, although electrically compatible, is classified as obsolete and should not be selected for new designs or long-term supply assurance.

Frequently Asked Questions (FAQ)

Q: Can the FFPF04H60STU be directly replaced with any of the listed substitutes?

A: Direct replacement is possible only with parts maintaining identical package designation (TO-220-2 Full Pack) and electrical ratings. The BYV25X-600,127 provides the closest electrical match at 5 A current rating. Higher current-rated parts (8 A and above) are electrically compatible but require thermal design verification to ensure junction temperature remains within specified limits.

Q: What is the significance of the 600 V reverse voltage rating?

A: The 600 V rating establishes the maximum reverse bias voltage the diode can withstand without breakdown. All listed substitutes maintain this 600 V specification, with the exception of IDV15E65D2XKSA1, which provides 650 V for applications requiring additional voltage margin.

Q: How does current rating affect substitution?

A: The FFPF04H60STU is rated for 4 A average rectified current. Substitute parts with equal or higher current ratings (5 A, 8 A, 12 A, 15 A, 20 A) are acceptable. Higher-rated parts provide design margin and reduce thermal stress, but circuit design must account for any changes in forward voltage drop and reverse leakage characteristics.

Q: What is the difference between fast recovery and standard recovery diodes?

A: All listed parts support fast recovery operation with reverse recovery time ≤ 500 ns at currents exceeding 200 mA. The FFPF04H60STU specifies 45 ns recovery time. Substitute parts range from 18 ns to 120 ns, with faster recovery times reducing switching losses in high-frequency applications.

Q: Are there compliance or certification differences between manufacturers?

A: All listed substitutes are REACH Unaffected and classified under ECCN EAR99. onsemi and STMicroelectronics parts are ROHS3 compliant. WeEn Semiconductors parts are RoHS compliant. Infineon Technologies IDV15E65D2XKSA1 is ROHS3 compliant. Verify specific compliance requirements for your application before final selection.

Q: What is the impact of forward voltage (Vf) differences on circuit performance?

A: Forward voltage directly affects power dissipation and thermal management. The FFPF04H60STU specifies 2.1 V at 4 A. Substitutes range from 1.3 V to 3.4 V depending on current rating and technology. Lower forward voltages reduce heat generation; higher values increase thermal load. Thermal design calculations must account for these differences.

Q: Can the FFPF04H60STU be used in applications requiring higher current capacity?

A: No. The 4 A rating is the maximum average rectified current. Applications requiring higher current must use substitute parts with appropriate current ratings (8 A, 12 A, 15 A, or 20 A options available).

Q: What is the significance of reverse leakage current (Ir)?

A: Reverse leakage current represents the small current flowing through the diode under reverse bias. The FFPF04H60STU specifies 100 µA at 600 V. Substitutes range from 2 µA to 50 µA, indicating improved leakage characteristics in modern designs. Lower leakage reduces standby power consumption and improves circuit efficiency.

Q: Are all listed substitutes available in the same packaging format?

A: All substitutes use TO-220-2 Full Pack or TO-220FPAC variants, which are mechanically and electrically compatible with standard TO-220 mounting hardware. Verify specific supplier device package designations (TO-220F-2L, TO-220FP, TO-220FPAC) for PCB footprint compatibility.

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