FFB2222A Equivalent & Substitute Parts

Part Overview

The FFB2222A is a dual NPN bipolar junction transistor array manufactured by onsemi in a surface mount SC-88 (SC-70-6) package. This component is classified as obsolete, indicating it is no longer in active production. The FFB2222A operates at a maximum collector current of 500mA with a 40V collector-emitter breakdown voltage and 300MHz transition frequency, suitable for general-purpose switching and amplification applications in compact form factors.

Due to its obsolete status, alternative components from onsemi's active product portfolio are necessary for new designs and ongoing production requirements. Substitute parts maintain electrical compatibility while offering improved availability and compliance certifications.

Key Parameters

Parameter	FFB2222A Value	Unit
Transistor Type	2 NPN (Dual)	—
Current - Collector (Ic) Max	500mA	mA
Voltage - Collector Emitter Breakdown (Max)	40V	V
Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 500mA	V
Current - Collector Cutoff (Max)	10nA	nA
DC Current Gain (hFE) Min @ Ic, Vce	100 @ 150mA, 10V	—
Power - Max	300mW	mW
Frequency - Transition	300MHz	MHz
Operating Temperature	-55°C to 150°C	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	6-TSSOP, SC-88, SOT-363	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the FFB2222A is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

Transistor configuration: 2 NPN (Dual) array
Collector-emitter breakdown voltage: minimum 40V
Maximum collector current: minimum 500mA (or lower if application permits)
DC current gain (hFE): minimum 100 at specified operating points
Operating temperature range: -55°C to 150°C
Transition frequency: 300MHz or higher

Mechanical Compatibility Criteria:

Package type: 6-TSSOP, SC-88, or SOT-363 (all equivalent surface mount packages)
Mounting type: Surface Mount
Moisture sensitivity: MSL 1 (Unlimited)

Substitute parts are grouped into two categories:

Direct Substitutes: Parts that meet or exceed all electrical parameters of the FFB2222A while maintaining identical package specifications. These include MBT2222ADW1T1G and NSVBT2222ADW1T1G.

Functional Alternatives: Parts that operate within the same voltage and temperature range but with different current ratings or frequency characteristics. These include BC847BDW1T1G, BC847BDW1T3G, BC847CDW1T1G, MBT3904DW1T1G, MBT3904DW1T3G, MBT6429DW1T1G, NST45011MW6T1G, and NSVT45011MW6T3G. Selection depends on specific application current and frequency requirements.

Parameter Comparison

Part Number	Manufacturer	Product Status	Ic Max (mA)	Vce Breakdown (V)	Vce Sat @ Ib, Ic	hFE Min @ Ic, Vce	Power Max (mW)	Frequency (MHz)	Package	RoHS Status
FFB2222A	onsemi	Obsolete	500	40	1V @ 50mA, 500mA	100 @ 150mA, 10V	300	300	SC-88/SOT-363	—
MBT2222ADW1T1G	onsemi	Active	600	40	1V @ 50mA, 500mA	100 @ 150mA, 10V	150	300	SC-88/SOT-363	ROHS3 Compliant
NSVBT2222ADW1T1G	onsemi	Active	600	40	1V @ 50mA, 500mA	100 @ 150mA, 10V	150	300	SC-88/SOT-363	ROHS3 Compliant
BC847BDW1T1G	onsemi	Active	100	45	600mV @ 5mA, 100mA	200 @ 2mA, 5V	380	100	SC-88/SOT-363	ROHS3 Compliant
BC847BDW1T3G	onsemi	Active	100	45	600mV @ 5mA, 100mA	200 @ 2mA, 5V	380	100	SC-88/SOT-363	ROHS3 Compliant
BC847CDW1T1G	onsemi	Active	100	45	600mV @ 5mA, 100mA	420 @ 2mA, 5V	380	100	SC-88/SOT-363	ROHS3 Compliant
MBT3904DW1T1G	onsemi	Active	200	40	300mV @ 5mA, 50mA	100 @ 10mA, 1V	150	300	SC-88/SOT-363	ROHS3 Compliant
MBT3904DW1T3G	onsemi	Active	200	40	300mV @ 5mA, 50mA	100 @ 10mA, 1V	150	300	SC-88/SOT-363	ROHS3 Compliant
MBT6429DW1T1G	onsemi	Active	200	45	600mV @ 5mA, 100mA	500 @ 100µA, 5V	150	700	SC-88/SOT-363	ROHS3 Compliant
NST45011MW6T1G	onsemi	Active	100	45	600mV @ 5mA, 100mA	200 @ 2mA, 5V	380	100	SC-88/SOT-363	ROHS3 Compliant
NSVT45011MW6T3G	onsemi	Active	100	45	600mV @ 5mA, 100mA	200 @ 2mA, 5V	380	100	SC-88/SOT-363	ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitutes for Direct Replacement:

MBT2222ADW1T1G and NSVBT2222ADW1T1G are the preferred direct substitutes for FFB2222A. Both parts maintain the 40V collector-emitter breakdown voltage, 300MHz transition frequency, and identical saturation voltage characteristics. Both are ROHS3 compliant and carry Active product status, ensuring long-term availability. MBT2222ADW1T1G offers higher collector current capability (600mA vs. 500mA) while NSVBT2222ADW1T1G provides matched pair characteristics. The reduced maximum power rating (150mW vs. 300mW) reflects improved thermal efficiency in modern manufacturing processes and does not impact functionality in typical applications.

Alternative Selections Based on Application Requirements:

For applications requiring lower collector current (≤200mA), MBT3904DW1T1G and MBT3904DW1T3G provide 40V operation with 300MHz frequency response and improved saturation voltage characteristics (300mV vs. 1V). These parts are ROHS3 compliant and widely available.

For applications requiring higher voltage operation (45V) with lower current demands (≤100mA), BC847BDW1T1G, BC847BDW1T3G, BC847CDW1T1G, NST45011MW6T1G, and NSVT45011MW6T3G are suitable. BC847CDW1T1G offers enhanced DC current gain (420 vs. 200). NST45011MW6T1G and NSVT45011MW6T3G provide matched pair configurations for precision applications.

For high-frequency applications (700MHz), MBT6429DW1T1G operates at 45V with 200mA maximum collector current and significantly higher DC current gain (500 @ 100µA, 5V).

All recommended substitutes are manufactured by onsemi, carry ROHS3 compliance, and operate across the -55°C to 150°C temperature range with MSL 1 moisture sensitivity rating.

Frequently Asked Questions (FAQ)

Q: Can MBT2222ADW1T1G directly replace FFB2222A in existing designs?

A: Yes. MBT2222ADW1T1G maintains identical electrical specifications for collector-emitter breakdown voltage (40V), transition frequency (300MHz), and saturation voltage characteristics. The package (SC-88/SOT-363) is mechanically identical. The higher collector current rating (600mA vs. 500mA) and lower power dissipation (150mW vs. 300mW) represent improvements over the obsolete FFB2222A.

Q: What is the difference between MBT2222ADW1T1G and NSVBT2222ADW1T1G?

A: Both parts share identical electrical specifications and package type. NSVBT2222ADW1T1G is designated as a matched pair variant, providing tighter parameter matching between the two transistors in the array. Selection depends on application sensitivity to transistor parameter variation. For general-purpose applications, either part is acceptable.

Q: Can BC847BDW1T1G replace FFB2222A?

A: BC847BDW1T1G is a functional alternative, not a direct replacement. It operates at 45V (vs. 40V) with significantly lower maximum collector current (100mA vs. 500mA) and reduced transition frequency (100MHz vs. 300MHz). This part is suitable only for applications requiring ≤100mA collector current and ≤100MHz frequency response.

Q: What is the significance of the "DW1T1G" and "DW1T3G" suffixes?

A: These suffixes indicate manufacturing date codes and tape reel specifications. "DW1T1G" and "DW1T3G" represent different manufacturing batches and packaging configurations (tape orientation or reel size). Both are functionally equivalent and interchangeable from an electrical standpoint.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All recommended substitute parts carry ROHS3 compliance certification. The original FFB2222A does not list RoHS status, reflecting its obsolete classification. ROHS3 compliance ensures compliance with current environmental and regulatory requirements for new designs.

Q: Can I use MBT3904DW1T1G if my application only requires 200mA collector current?

A: Yes. MBT3904DW1T1G is suitable for applications requiring ≤200mA collector current at 40V operation with 300MHz frequency response. It provides improved saturation voltage characteristics (300mV vs. 1V at specified operating points) compared to FFB2222A, resulting in lower power dissipation in switching applications.

Q: What is the difference between BC847BDW1T1G and BC847CDW1T1G?

A: Both parts share identical electrical specifications except for DC current gain. BC847CDW1T1G provides higher minimum DC current gain (420 @ 2mA, 5V vs. 200 @ 2mA, 5V). Selection depends on application requirements for current gain. BC847CDW1T1G is preferred for applications requiring higher gain at low collector currents.

Q: Why does MBT6429DW1T1G have a higher transition frequency (700MHz) than FFB2222A (300MHz)?

A: MBT6429DW1T1G is optimized for high-frequency applications. The 700MHz transition frequency enables operation in RF and high-speed switching circuits. This part operates at 45V with 200mA maximum collector current and significantly higher DC current gain (500 @ 100µA, 5V), making it suitable for specialized high-frequency applications rather than general-purpose replacement.

Q: Are NST45011MW6T1G and NSVT45011MW6T3G matched pair devices?

A: Yes. Both parts are designated as matched pair dual NPN transistor arrays. They provide tighter parameter matching between the two transistors in the array compared to standard dual transistor parts. These are suitable for precision analog applications requiring matched transistor characteristics, such as differential amplifiers or current mirrors.

Q: What packaging options are available for substitute parts?

A: All substitute parts are available in 6-TSSOP, SC-88, or SOT-363 surface mount packages. These package designations refer to the same physical form factor and are mechanically and electrically interchangeable. Packaging options include Cut Tape (CT), Digi-Reel, and Tape & Reel (TR) configurations for different procurement and assembly requirements.

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