FESB8HTHE3_A/P Equivalent & Substitute Parts

Part Overview

The FESB8HTHE3_A/P is a general-purpose rectifier diode manufactured by Vishay General Semiconductor - Diodes Division, rated for 500 V DC reverse voltage and 8 A average rectified current in a surface-mount TO-263AB (D2PAK) package. This device is classified as Last Time Buy, indicating discontinued production status. Equivalent and substitute parts are necessary to ensure continued design support, procurement availability, and long-term supply chain reliability for applications requiring this diode specification or compatible alternatives.

Substiute Parts

FESB8HTHE3_A/P

Vishay General Semiconductor - Diodes DivisionIn Stock: 848FESB8HTHE3_A/P Datasheet

Current PartRFQ

FESB8JTHM3/I

Vishay General Semiconductor - Diodes DivisionIn Stock: 1055FESB8JTHM3/I Datasheet

MFR RecommendedRFQ

STTH8R06GY-TR

STMicroelectronicsIn Stock: 3153STTH8R06GY-TR Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the FESB8HTHE3_A/P are selected based on the following criteria:

Primary Compatibility Parameters:

• Current rating: 8 A average rectified current (Io)
• Package type: TO-263AB (D2PAK) surface-mount configuration
• Voltage rating: Equal to or greater than 500 V DC reverse voltage
• Speed classification: Fast recovery diode characteristics
• Automotive grade qualification: AEC-Q101 certification
• Mounting type: Surface mount

Substitution Logic: Parts with equal or higher voltage ratings (500 V or greater) maintain backward compatibility with the original design. Parts with identical current ratings (8 A) and matching package geometry (TO-263AB/D2PAK) ensure mechanical and electrical interchangeability. Fast recovery speed classification and automotive-grade qualification ensure functional equivalence in switching and reliability-critical applications.

Parameter Comparison

Engineering Selection Recommendations

FESB8JTHM3/I (Vishay General Semiconductor - Diodes Division): This substitute is manufactured by the same supplier as the original part and maintains identical electrical characteristics for forward voltage drop and reverse recovery time. The 600 V voltage rating provides higher reverse voltage margin than the original 500 V specification. Product status is Active, ensuring continued availability and supply chain support. AEC-Q101 automotive qualification and identical operating temperature range (-55°C to 150°C) confirm functional equivalence. This part is the preferred substitute for direct replacement in existing designs.

STTH8R06GY-TR (STMicroelectronics): This substitute meets all core compatibility requirements: 8 A current rating, TO-263AB package, 600 V reverse voltage rating, fast recovery speed classification, and AEC-Q101 automotive qualification. The 45 ns reverse recovery time is superior to the original 50 ns specification. Product status is Active with high inventory availability (3100 pcs). The extended operating temperature range (-40°C to 175°C) provides additional thermal margin. Forward voltage drop is higher at 3.2 V compared to 1.5 V, resulting in increased power dissipation in high-current applications. Reverse leakage current is elevated at 30 µA versus 10 µA, which may impact low-power standby performance. This part is suitable for applications where thermal margin and recovery speed are prioritized over forward voltage characteristics.

Frequently Asked Questions (FAQ)

Q: Can FESB8JTHM3/I be used as a direct replacement for FESB8HTHE3_A/P?

A: Yes. Both parts are manufactured by Vishay General Semiconductor - Diodes Division and share identical electrical characteristics for forward voltage (1.5 V @ 8 A) and reverse recovery time (50 ns). The TO-263AB package geometry is identical. The 600 V rating of FESB8JTHM3/I exceeds the 500 V requirement, providing backward compatibility. AEC-Q101 qualification and automotive grade are maintained.

Q: What are the key differences between FESB8JTHM3/I and STTH8R06GY-TR?

A: Both parts meet the 8 A current and TO-263AB package requirements. FESB8JTHM3/I maintains the original forward voltage characteristic (1.5 V @ 8 A) and reverse leakage (10 µA @ 600 V). STTH8R06GY-TR has higher forward voltage (3.2 V @ 8 A) and higher reverse leakage (30 µA @ 600 V), but offers faster recovery time (45 ns versus 50 ns) and extended temperature range (-40°C to 175°C versus -55°C to 150°C).

Q: Is the higher voltage rating (600 V) of substitute parts compatible with a 500 V design?

A: Yes. A higher voltage rating is backward compatible. The 600 V rating of both substitute parts exceeds the 500 V requirement of the original design, providing additional reverse voltage margin without affecting circuit operation.

Q: What is the impact of higher forward voltage in STTH8R06GY-TR?

A: The STTH8R06GY-TR forward voltage of 3.2 V @ 8 A is 2.13 times higher than the original 1.5 V specification. This increases power dissipation in the diode, requiring thermal management evaluation. Applications with continuous high-current operation must account for increased heat generation.

Q: Are all substitute parts qualified for automotive applications?

A: Yes. All parts listed—FESB8HTHE3_A/P, FESB8JTHM3/I, and STTH8R06GY-TR—carry automotive grade classification and AEC-Q101 qualification, confirming suitability for automotive-grade reliability requirements.

Q: What is the significance of the Last Time Buy status for FESB8HTHE3_A/P?

A: Last Time Buy status indicates the original part is discontinued and no longer manufactured. Existing inventory (791 pcs) represents the final available stock. Designs must transition to active substitute parts to ensure long-term supply chain continuity.

Q: Can STTH8R06GY-TR be used in low-power standby applications?

A: The higher reverse leakage current of STTH8R06GY-TR (30 µA @ 600 V versus 10 µA @ 500 V in the original) may impact standby power consumption. Applications with strict standby current specifications should use FESB8JTHM3/I, which maintains the original leakage characteristic.