FESB8BTHE3_A/P Equivalent & Substitute Parts

Part Overview

The FESB8BTHE3_A/P is a general-purpose rectifier diode manufactured by Vishay General Semiconductor - Diodes Division, rated for 100 V DC reverse voltage and 8 A average rectified current in a surface mount TO-263AB (D2PAK) package. This device is classified as Last Time Buy, indicating discontinued production. Equivalent and substitute parts are necessary to maintain design continuity and ensure component availability for new production runs and field replacements.

Substiute Parts

FESB8BTHE3_A/P

Vishay General Semiconductor - Diodes DivisionIn Stock: 891FESB8BTHE3_A/P Datasheet

Current PartRFQ

FESB8DTHM3/I

Vishay General Semiconductor - Diodes DivisionIn Stock: 979FESB8DTHM3/I Datasheet

MFR RecommendedRFQ

STPS5H100BY-TR

STMicroelectronicsIn Stock: 25374STPS5H100BY-TR Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the FESB8BTHE3_A/P are selected based on the following criteria:

Primary Substitution Criteria:

• Voltage - DC Reverse (Vr) (Max): Equal to or greater than 100 V
• Current - Average Rectified (Io): Equal to or greater than 8 A
• Package / Case: TO-263AB (D2PAK) or equivalent surface mount package
• Mounting Type: Surface Mount
• Grade: Automotive
• Qualification: AEC-Q101

Secondary Compatibility Factors:

• Technology: Standard or Schottky (both acceptable for general-purpose rectification)
• Reverse Recovery Time (trr): Fast Recovery ≤ 500 ns
• Operating Temperature Range: Minimum -55°C to +150°C or broader
• RoHS3 Compliance and REACH Unaffected status

Substitutes are grouped into two categories: direct voltage/current equivalents and higher-voltage alternatives that maintain or exceed current capacity.

Parameter Comparison

Engineering Selection Recommendations

FESB8DTHM3/I (Vishay General Semiconductor)

This part is the primary substitute for the FESB8BTHE3_A/P. It maintains identical current capacity (8 A), identical forward voltage characteristics (950 mV @ 8 A), identical reverse recovery time (35 ns), and identical package form factor (TO-263AB D2PAK). The voltage rating is increased to 200 V, providing enhanced overvoltage margin. Both parts carry Automotive grade certification and AEC-Q101 qualification. The FESB8DTHM3/I is in Active product status with 888 pieces in stock, ensuring long-term availability. This substitute requires no circuit redesign and provides direct functional replacement with improved voltage headroom.

STPS5H100BY-TR (STMicroelectronics)

This part is a secondary substitute suitable for applications where current requirements can be reduced to 5 A or lower. It maintains the 100 V voltage rating and provides superior forward voltage characteristics (730 mV @ 5 A versus 950 mV @ 8 A), resulting in lower power dissipation. The Schottky technology offers faster switching characteristics and lower reverse leakage (3.5 µA @ 100 V). However, the package differs (DPAK versus D2PAK), requiring PCB layout modification. The operating temperature range extends to 175°C. This substitute is appropriate only when current derating to 5 A is acceptable and when package footprint changes can be accommodated. The STPS5H100BY-TR is in Active product status with 25,300 pieces in stock.

Frequently Asked Questions (FAQ)

Q: Can FESB8DTHM3/I be used as a direct replacement for FESB8BTHE3_A/P without circuit modification?

A: Yes. The FESB8DTHM3/I is a direct functional replacement. It maintains identical current capacity (8 A), identical forward voltage (950 mV @ 8 A), identical reverse recovery time (35 ns), and identical package (TO-263AB D2PAK). The increased voltage rating (200 V versus 100 V) provides additional design margin without requiring circuit changes.

Q: What are the limitations of using STPS5H100BY-TR as a substitute?

A: The STPS5H100BY-TR has two primary limitations. First, the current rating is reduced to 5 A, requiring verification that the application does not exceed this threshold. Second, the package is DPAK (TO-252-3) rather than D2PAK (TO-263AB), necessitating PCB footprint redesign. The Schottky technology and lower forward voltage are advantages for power efficiency but may require thermal analysis validation in the target application.

Q: Are all substitute parts automotive-qualified?

A: Yes. Both FESB8DTHM3/I and STPS5H100BY-TR carry Automotive grade classification and AEC-Q101 qualification, matching the original FESB8BTHE3_A/P specification.

Q: What is the difference between Standard and Schottky diode technology in these substitutes?

A: The FESB8BTHE3_A/P and FESB8DTHM3/I use Standard (junction) diode technology with forward voltage of 950 mV @ 8 A. The STPS5H100BY-TR uses Schottky technology with lower forward voltage (730 mV @ 5 A) and faster switching characteristics. Schottky diodes are preferred in high-frequency applications and where power dissipation must be minimized, but they have higher reverse leakage current at elevated temperatures.

Q: Can the STPS5H100BY-TR be used in applications requiring 8 A continuous current?

A: No. The STPS5H100BY-TR is rated for 5 A average rectified current. Using it in an 8 A application would exceed its current rating and result in excessive junction temperature and potential device failure. The FESB8DTHM3/I is the appropriate substitute for 8 A applications.

Q: What is the inventory status of these substitute parts?

A: FESB8DTHM3/I has 888 pieces in stock (Active product status). STPS5H100BY-TR has 25,300 pieces in stock (Active product status). Both parts are readily available for procurement.

Q: Do the substitute parts have the same moisture sensitivity level?

A: The FESB8BTHE3_A/P specifies MSL 1 (Unlimited). The FESB8DTHM3/I inherits the same MSL 1 classification. The STPS5H100BY-TR also specifies MSL 1 (Unlimited). All three parts have unlimited shelf life under standard storage conditions.