FESB8AT-E3/81 Equivalent & Substitute Parts

Part Overview

The FESB8AT-E3/81 is a general-purpose rectifier diode manufactured by Vishay General Semiconductor - Diodes Division. This surface mount component operates at 50 V DC reverse voltage with an 8 A average rectified current rating in a TO-263AB (D2PAK) package. The part is classified as Last Time Buy, indicating discontinued production status. Equivalent and substitute parts are necessary to maintain design continuity and ensure component availability for ongoing production and repair applications.

Key Parameters

Parameter	Value
Voltage - DC Reverse (Vr) (Max)	50 V
Current - Average Rectified (Io)	8 A
Voltage - Forward (Vf) (Max) @ If	950 mV @ 8 A
Reverse Recovery Time (trr)	35 ns
Current - Reverse Leakage @ Vr	10 µA @ 50 V
Speed Classification	Fast Recovery ≤ 500ns, > 200mA (Io)
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type	Surface Mount
Operating Temperature - Junction	-55°C ~ 150°C
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the FESB8AT-E3/81 are classified into two categories based on electrical parameter compatibility:

Parametric Equivalents maintain identical electrical specifications across all critical parameters: 50 V reverse voltage, 8 A average rectified current, 950 mV forward voltage drop at 8 A, 35 ns reverse recovery time, and 10 µA reverse leakage current at rated voltage. These parts are direct functional replacements with identical package and mounting specifications. Parametric equivalents include SFAS801G MNG and SFAS801GHMNG from Taiwan Semiconductor Corporation.

Manufacturer Recommended Substitute (FESB8DT-M3/I) operates at an elevated voltage rating of 200 V while maintaining the same 8 A current capacity and identical forward voltage characteristics. This part is suitable for applications where higher voltage margin is acceptable or required. The elevated voltage rating does not compromise functionality in circuits designed for 50 V operation.

Substitution eligibility is determined by the following criteria:

Identical or higher DC reverse voltage rating
Identical or higher average rectified current rating
Identical forward voltage drop characteristics
Identical or faster reverse recovery time
Identical or lower reverse leakage current
Identical package and mounting type (TO-263AB D2PAK)
Identical operating temperature range

Parameter Comparison

Parameter	FESB8AT-E3/81	FESB8DT-M3/I	SFAS801G MNG	SFAS801GHMNG
Manufacturer	Vishay General Semiconductor	Vishay General Semiconductor	Taiwan Semiconductor Corporation	Taiwan Semiconductor Corporation
Voltage - DC Reverse (Vr) (Max)	50 V	200 V	50 V	50 V
Current - Average Rectified (Io)	8 A	8 A	8 A	8 A
Voltage - Forward (Vf) (Max) @ If	950 mV @ 8 A	950 mV @ 8 A	950 mV @ 8 A	950 mV @ 8 A
Reverse Recovery Time (trr)	35 ns	35 ns	35 ns	35 ns
Current - Reverse Leakage @ Vr	10 µA @ 50 V	10 µA @ 200 V	10 µA @ 50 V	10 µA @ 50 V
Speed Classification	Fast Recovery ≤ 500ns, > 200mA	Fast Recovery ≤ 500ns, > 200mA	Fast Recovery ≤ 500ns, > 200mA	Fast Recovery ≤ 500ns, > 200mA
Package / Case	TO-263-3, D2PAK	TO-263-3, D2PAK	TO-263-3, D2PAK	TO-263-3, D2PAK
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Operating Temperature - Junction	-55°C ~ 150°C	-55°C ~ 150°C	-55°C ~ 150°C	-55°C ~ 150°C
Product Status	Last Time Buy	Active	Active	Active
RoHS Status	ROHS3 Compliant	Not specified	ROHS3 Compliant	ROHS3 Compliant
Automotive Grade	Not specified	Yes (AEC-Q101)	Not specified	Yes (AEC-Q101)

Engineering Selection Recommendations

For Direct Replacement (Parametric Equivalents): SFAS801G MNG and SFAS801GHMNG from Taiwan Semiconductor Corporation provide parametric equivalence to the FESB8AT-E3/81. Both parts maintain identical electrical specifications and package configuration. SFAS801GHMNG includes automotive-grade qualification (AEC-Q101) and is suitable for applications requiring automotive compliance. SFAS801G MNG is the standard industrial-grade equivalent. Both parts are in active production status with confirmed inventory availability.

For Voltage-Rated Substitution: FESB8DT-M3/I from Vishay General Semiconductor offers a higher voltage rating (200 V) while maintaining all other electrical parameters. This part is suitable for applications where increased voltage margin is beneficial or where circuit redesign permits higher voltage operation. FESB8DT-M3/I includes automotive-grade qualification (AEC-Q101) and is in active production status.

Compliance Considerations: All substitute parts maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating. Parts designated with automotive qualification (FESB8DT-M3/I and SFAS801GHMNG) meet AEC-Q101 standards and are appropriate for automotive applications. Selection between industrial and automotive grades depends on application requirements and end-use environment.

Frequently Asked Questions (FAQ)

Q: Can SFAS801G MNG and SFAS801GHMNG be used interchangeably with FESB8AT-E3/81?

A: Yes. Both Taiwan Semiconductor Corporation parts are parametric equivalents with identical electrical specifications: 50 V reverse voltage, 8 A current rating, 950 mV forward voltage drop, 35 ns reverse recovery time, and 10 µA reverse leakage current. Both use the same TO-263AB D2PAK package and surface mount configuration. Selection between the two depends on automotive qualification requirements; SFAS801GHMNG includes AEC-Q101 certification while SFAS801G MNG does not.

Q: Is FESB8DT-M3/I a direct replacement for FESB8AT-E3/81?

A: FESB8DT-M3/I is a functional substitute with one key difference: it operates at 200 V reverse voltage compared to the 50 V rating of FESB8AT-E3/81. All other electrical parameters are identical. This higher voltage rating makes it suitable for applications where increased voltage margin is acceptable. It is not a direct pin-for-pin replacement in the sense that it has different voltage specifications, but it is mechanically and electrically compatible in the same package.

Q: What is the difference between SFAS801G MNG and SFAS801GHMNG?

A: Both parts are parametric equivalents with identical electrical specifications and package configuration. The primary difference is that SFAS801GHMNG includes automotive-grade qualification (AEC-Q101) certification, making it suitable for automotive applications. SFAS801G MNG is the standard industrial-grade version. Selection depends on whether the application requires automotive compliance.

Q: Are all substitute parts RoHS compliant?

A: SFAS801G MNG and SFAS801GHMNG are explicitly ROHS3 compliant. FESB8DT-M3/I RoHS status is not specified in the provided data. Verify RoHS compliance status with the manufacturer if this is a requirement for your application.

Q: Can these parts be used in high-temperature applications?

A: All parts, including FESB8AT-E3/81 and its substitutes, operate across the same junction temperature range of -55°C to 150°C. This range is suitable for industrial and automotive applications within these temperature limits.

Q: What is the moisture sensitivity level for these diodes?

A: FESB8AT-E3/81, SFAS801G MNG, and SFAS801GHMNG all have MSL 1 (Unlimited) rating, indicating no moisture sensitivity restrictions. These parts do not require special moisture control during storage or handling.

Q: Are there any differences in reverse leakage current between the parts?

A: FESB8AT-E3/81, SFAS801G MNG, and SFAS801GHMNG all specify 10 µA reverse leakage at their respective rated voltages (50 V). FESB8DT-M3/I specifies 10 µA reverse leakage at 200 V. The leakage current specification is identical across all parts at their rated voltages.

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