FESB16AT-E3/81 Equivalent & Substitute Parts

Part Overview

The FESB16AT-E3/81 is a general-purpose rectifier diode manufactured by Vishay General Semiconductor - Diodes Division. This surface mount component operates at 50 V DC reverse voltage with 16 A average rectified current in a TO-263AB (D2PAK) package. The part is classified as Last Time Buy, indicating discontinued production status. Identification of equivalent and substitute parts is necessary to ensure design continuity and procurement availability for applications requiring this diode specification or compatible alternatives.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	50	V
Current - Average Rectified (Io)	16	A
Voltage - Forward (Vf) (Max) @ If	975 mV @ 16 A	mV
Reverse Recovery Time (trr)	35	ns
Current - Reverse Leakage @ Vr	10	µA @ 50 V
Capacitance @ Vr, F	175	pF @ 4V, 1MHz
Package / Case	TO-263-3, D2PAK (2 Leads + Tab)	-
Operating Temperature - Junction	-65 to 150	°C
Mounting Type	Surface Mount	-

Substitute Part Grouping Explanation

Substitution of the FESB16AT-E3/81 is determined by the following critical parameters: voltage rating (Vr), current capacity (Io), forward voltage drop (Vf), recovery characteristics (trr), and package compatibility (TO-263AB).

Substitute parts are grouped into two categories based on these criteria:

Category 1: Direct Voltage and Current Match Parts maintaining the 50 V / 16 A specification with identical or superior recovery characteristics and package form factor qualify as direct substitutes.

Category 2: Reduced Current Capacity Parts with matching 50 V voltage rating but reduced current capacity (below 16 A) are functional substitutes only for applications where the lower current rating is acceptable.

Category 3: Elevated Voltage Rating Parts with higher voltage ratings (200 V and above) with maintained 16 A current capacity are suitable for applications where voltage derating is acceptable and the higher voltage specification does not create design conflicts.

Parameter Comparison

Parameter	FESB16AT-E3/81	FESB16DT-M3/I	GPAS1001 MNG
Manufacturer	Vishay General Semiconductor	Vishay General Semiconductor	Taiwan Semiconductor Corporation
Voltage - DC Reverse (Vr) (Max)	50 V	200 V	50 V
Current - Average Rectified (Io)	16 A	16 A	10 A
Voltage - Forward (Vf) (Max) @ If	975 mV @ 16 A	975 mV @ 16 A	1.1 V @ 10 A
Speed Classification	Fast Recovery ≤ 500ns	Fast Recovery ≤ 500ns	Standard Recovery > 500ns
Reverse Recovery Time (trr)	35 ns	35 ns	Not specified
Current - Reverse Leakage @ Vr	10 µA @ 50 V	10 µA @ 200 V	5 µA @ 50 V
Capacitance @ Vr, F	175 pF @ 4V, 1MHz	175 pF @ 4V, 1MHz	50 pF @ 4V, 1MHz
Package / Case	TO-263-3, D2PAK	TO-263-3, D2PAK	TO-263-3, D2PAK
Operating Temperature - Junction	-65 to 150°C	-65 to 150°C	-55 to 150°C
Product Status	Last Time Buy	Active	Active
RoHS Status	ROHS3 Compliant	Not specified	ROHS3 Compliant
Automotive Qualification	Not specified	AEC-Q101	Not specified

Engineering Selection Recommendations

FESB16DT-M3/I (Vishay General Semiconductor)

This substitute maintains identical current capacity (16 A) and forward voltage characteristics (975 mV @ 16 A) with fast recovery performance (35 ns trr). The elevated voltage rating (200 V) provides additional design margin for applications operating below 50 V. The part carries Active product status and AEC-Q101 automotive qualification, ensuring continued availability and suitability for automotive-grade applications. This substitute is recommended for designs where voltage derating is acceptable and long-term component availability is required.

GPAS1001 MNG (Taiwan Semiconductor Corporation)

This substitute maintains the 50 V voltage specification with reduced current capacity (10 A versus 16 A). The part carries Active product status and ROHS3 compliance. This substitute is suitable only for applications where the 10 A current rating satisfies design requirements. The standard recovery classification (> 500ns) differs from the fast recovery characteristic of the main part. Operating temperature range is reduced to -55 to 150°C. This substitute is applicable for lower-current applications requiring 50 V operation.

Frequently Asked Questions (FAQ)

Q: Can FESB16DT-M3/I be used as a direct replacement for FESB16AT-E3/81?

A: Yes, within voltage derating constraints. Both parts share identical current capacity (16 A), forward voltage drop (975 mV @ 16 A), and recovery time (35 ns). The FESB16DT-M3/I operates at 200 V maximum reverse voltage, which is compatible with applications designed for 50 V operation. The higher voltage rating does not create functional incompatibility in circuits operating below 50 V.

Q: What is the primary limitation of GPAS1001 MNG as a substitute?

A: The GPAS1001 MNG is rated for 10 A average rectified current, compared to 16 A for the FESB16AT-E3/81. This part is suitable only for applications where the circuit current requirement does not exceed 10 A. Additionally, the GPAS1001 MNG employs standard recovery technology (> 500ns) rather than fast recovery (35 ns), which may affect switching performance in high-frequency applications.

Q: Are all substitute parts available in the same package?

A: Yes. All listed substitute parts utilize the TO-263-3 D2PAK (2 Leads + Tab) surface mount package, ensuring mechanical and thermal compatibility with the original FESB16AT-E3/81 footprint.

Q: Does the FESB16DT-M3/I carry automotive qualification?

A: Yes. The FESB16DT-M3/I is qualified to AEC-Q101 automotive standards, making it suitable for automotive applications requiring this certification level.

Q: What is the operating temperature range difference between substitutes?

A: The FESB16AT-E3/81 and FESB16DT-M3/I both operate from -65°C to 150°C junction temperature. The GPAS1001 MNG operates from -55°C to 150°C, providing a reduced low-temperature operating range of 10°C.

Q: How does reverse leakage current compare across parts?

A: The FESB16AT-E3/81 and FESB16DT-M3/I both specify 10 µA reverse leakage at their respective voltage ratings. The GPAS1001 MNG specifies 5 µA at 50 V, indicating lower leakage current at the same voltage level.

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