FES8HT-E3/45 Equivalent & Substitute Parts

Part Overview

The FES8HT-E3/45 is a general-purpose rectifier diode manufactured by Vishay General Semiconductor - Diodes Division. This through-hole component operates at 500 V DC reverse voltage with an 8 A average rectified current rating and is housed in a TO-220AC package. The device is classified as Active product status with ROHS3 compliance and unlimited moisture sensitivity level (MSL 1).

Substitute parts are identified to address inventory availability, extended voltage ratings, or alternative manufacturer sourcing while maintaining functional compatibility within specified electrical and mechanical parameters.

Substiute Parts

FES8HT-E3/45

Vishay General Semiconductor - Diodes DivisionIn Stock: 2228FES8HT-E3/45 Datasheet

Current PartRFQ

STTH8L06D

STMicroelectronicsIn Stock: 1431STTH8L06D Datasheet

DirectRFQ

BYV29-500,127

WeEn SemiconductorsIn Stock: 5211BYV29-500,127 Datasheet

MFR RecommendedRFQ

STTH8R06D

STMicroelectronicsIn Stock: 65384STTH8R06D Datasheet

MFR RecommendedRFQ

STTH8R06DIRG

STMicroelectronicsIn Stock: 1993STTH8R06DIRG Datasheet

MFR RecommendedRFQ

STTH8S06D

STMicroelectronicsIn Stock: 35198STTH8S06D Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the FES8HT-E3/45 are qualified based on the following criteria:

Electrical Compatibility Parameters:

• Voltage - DC Reverse (Vr) rating equal to or greater than 500 V
• Current - Average Rectified (Io) rating equal to or greater than 8 A
• Speed classification: Fast Recovery ≤ 500ns, > 200mA (Io)
• Mounting type: Through Hole
• Package / Case: TO-220-2 or TO-220-2 Insulated

Mechanical Compatibility Parameters:

• Supplier Device Package: TO-220AC or TO-220AC ins
• Operating temperature range compatible with application requirements

Compliance Parameters:

• RoHS3 Compliant status
• Moisture Sensitivity Level (MSL): 1 (Unlimited)
• Product Status: Active

All identified substitute parts meet or exceed the electrical and mechanical requirements of the main part while maintaining functional interchangeability within the specified parameter ranges.

Parameter Comparison

Engineering Selection Recommendations

All identified substitute parts maintain Active product status and ROHS3 compliance, ensuring regulatory alignment with the original FES8HT-E3/45 component.

STTH8L06D (STMicroelectronics): This substitute provides 600 V reverse voltage rating with 8 A current capacity. The lower forward voltage (1.3 V @ 8 A) compared to the main part reduces power dissipation. Extended maximum junction temperature (175°C) supports higher thermal operating conditions. Reverse recovery time of 105 ns remains within fast recovery classification.

BYV29-500,127 (WeEn Semiconductors): This substitute maintains the 500 V reverse voltage rating of the main part while providing 9 A current capacity. Forward voltage of 1.25 V @ 8 A offers improved efficiency. Reverse recovery time of 60 ns supports fast switching applications. REACH Affected status requires verification against specific application regulatory requirements.

STTH8R06D (STMicroelectronics): This substitute provides 600 V reverse voltage with 8 A current capacity and the fastest reverse recovery time (45 ns) among all substitutes. Extended maximum junction temperature (175°C) enables operation in elevated thermal environments. Forward voltage of 2.9 V @ 8 A represents increased power dissipation relative to the main part.

STTH8R06DIRG (STMicroelectronics): This substitute is electrically identical to STTH8R06D with 600 V reverse voltage, 8 A current capacity, and 45 ns reverse recovery time. The TO-220-2 Insulated package variant provides galvanic isolation between the semiconductor die and the mounting surface, applicable to designs requiring electrical isolation.

STTH8S06D (STMicroelectronics): This substitute provides 600 V reverse voltage with 8 A current capacity and the shortest reverse recovery time (18 ns) among all substitutes, supporting ultra-fast switching applications. Extended maximum junction temperature (175°C) accommodates high-temperature operation. Forward voltage of 3.4 V @ 8 A represents the highest power dissipation among all substitutes.

Frequently Asked Questions (FAQ)

Q: Can STTH8L06D, STTH8R06D, STTH8R06DIRG, and STTH8S06D be used as direct replacements for FES8HT-E3/45 in a 500 V circuit?

A: Yes. All four STMicroelectronics substitutes have 600 V reverse voltage ratings, which exceed the 500 V requirement of the main part. The higher voltage rating provides design margin and does not compromise functionality in 500 V applications. All maintain 8 A current capacity and fast recovery speed classification.

Q: What is the difference between STTH8R06D and STTH8R06DIRG?

A: Both parts are electrically identical with 600 V reverse voltage, 8 A current capacity, and 45 ns reverse recovery time. The primary difference is the package variant: STTH8R06D uses standard TO-220-2 package, while STTH8R06DIRG uses TO-220-2 Insulated package. The insulated variant provides galvanic isolation between the die and mounting surface.

Q: How does reverse recovery time affect circuit performance?

A: Reverse recovery time (trr) determines the switching speed of the diode. Shorter trr values enable faster switching transitions and reduce switching losses. The FES8HT-E3/45 has 50 ns trr. Substitutes range from 18 ns (STTH8S06D) to 105 ns (STTH8L06D). Selection depends on circuit switching frequency requirements.

Q: Is BYV29-500,127 suitable for applications requiring REACH compliance?

A: BYV29-500,127 has REACH Affected status, requiring verification against specific application regulatory requirements. The other five substitutes (STTH8L06D, STTH8R06D, STTH8R06DIRG, STTH8S06D) have REACH Unaffected status, matching the main part's compliance profile.

Q: What is the impact of forward voltage differences among substitutes?

A: Forward voltage (Vf) directly affects power dissipation in the diode. Lower Vf values reduce heat generation. BYV29-500,127 (1.25 V @ 8 A) and STTH8L06D (1.3 V @ 8 A) offer lower dissipation than the main part (1.5 V @ 8 A). STTH8R06D and STTH8R06DIRG (2.9 V @ 8 A) and STTH8S06D (3.4 V @ 8 A) have higher dissipation and require thermal management consideration.

Q: Are all substitutes available in the same TO-220AC package?

A: All substitutes use TO-220-2 or TO-220-2 Insulated packages with TO-220AC supplier device package designation, ensuring mechanical and thermal interface compatibility with the main part. STTH8R06DIRG uses an insulated variant for applications requiring electrical isolation.

Q: Can FES8HT-E3/45 be replaced with BYV29-500,127 in a 9 A application?

A: BYV29-500,127 has a 9 A current rating, exceeding the 8 A rating of the main part. However, the FES8HT-E3/45 is rated for 8 A maximum. Substitution in a 9 A application would require the main part to be replaced with BYV29-500,127 or another 9 A-rated substitute, not as a direct replacement of the existing 8 A component.

Q: What is the operating temperature range difference between the main part and substitutes?

A: The FES8HT-E3/45 has a maximum junction temperature of 150°C. All STMicroelectronics substitutes (STTH8L06D, STTH8R06D, STTH8R06DIRG, STTH8S06D) have maximum junction temperatures of 175°C, providing 25°C additional thermal margin. BYV29-500,127 matches the 150°C maximum of the main part.