FES8DTHE3/45 Equivalent & Substitute Parts

Part Overview

The FES8DTHE3/45 is a general-purpose rectifier diode manufactured by Vishay General Semiconductor - Diodes Division, rated for 200 V DC reverse voltage and 8 A average rectified current in a TO-220AC through-hole package. This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. The diode features fast recovery characteristics with a reverse recovery time of 35 ns and is qualified to AEC-Q101 automotive standards. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating available product status and packaging options.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	200	V
Current - Average Rectified (Io)	8	A
Voltage - Forward (Vf) (Max) @ If	950 mV @ 8 A	mV
Reverse Recovery Time (trr)	35	ns
Current - Reverse Leakage @ Vr	10	µA @ 200 V
Speed Classification	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Mounting Type	Through Hole	—
Package / Case	TO-220-2	—
Operating Temperature - Junction	-55 to 150	°C
Grade	Automotive	—
Qualification	AEC-Q101	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the FES8DTHE3/45 are grouped based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Critical Parameters (Must Match):

Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 8 A
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC

Secondary Parameters (Allowable Variation):

Voltage - Forward (Vf) (Max) @ If: Range 950 mV to 1.05 V @ 8 A
Reverse Recovery Time (trr): Range 25 ns to 35 ns
Current - Reverse Leakage @ Vr: Range 1 µA to 10 µA @ 200 V
Operating Temperature - Junction: Minimum -55°C, Maximum 150°C to 175°C

Compliance Parameters:

RoHS Status: ROHS3 Compliant
REACH Status: REACH Unaffected
Technology: Standard

Substitute parts are classified into two categories: parametric equivalents (matching all critical and secondary parameters within specified ranges) and direct manufacturer alternatives (meeting critical parameters with minor variations in secondary characteristics).

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ If [mV]	trr [ns]	Ir @ Vr [µA]	Tj (Max) [°C]	Product Status	Package
FES8DTHE3/45	Vishay General Semiconductor	200	8	950 @ 8 A	35	10 @ 200 V	150	Obsolete	TO-220AC
FES8DT-E3/45	Vishay General Semiconductor	200	8	950 @ 8 A	35	10 @ 200 V	150	Active	TO-220AC
MUR820HC0G	Taiwan Semiconductor Corporation	200	8	975 @ 8 A	25	5 @ 200 V	175	Active	TO-220AC
MUR820-BP	Micro Commercial Co	200	8	975 @ 8 A	35	5 @ 200 V	150	Active	TO-220AC
STTH802D	STMicroelectronics	200	8	1050 @ 8 A	30	6 @ 200 V	175	Active	TO-220AC
ER802_T0_00001	Panjit International Inc.	200	8	950 @ 8 A	35	1 @ 200 V	150	Active	TO-220AC
STTH1202D	STMicroelectronics	200	12	1100 @ 12 A	35	10 @ 200 V	175	Active	TO-220AC

Engineering Selection Recommendations

Parametric Equivalent - Preferred for Direct Replacement:

FES8DT-E3/45 (Vishay General Semiconductor) is the primary substitute for FES8DTHE3/45. This part maintains identical electrical specifications across all critical and secondary parameters, including forward voltage, reverse recovery time, and reverse leakage current. The part is currently in active production status, ensuring long-term availability. Both parts are ROHS3 compliant and REACH unaffected. The primary difference is packaging format (tube versus unspecified for the original), which does not affect electrical performance or mechanical fit in TO-220AC applications.

Direct Manufacturer Alternatives - Acceptable Substitutes:

MUR820-BP (Micro Commercial Co) and MUR820HC0G (Taiwan Semiconductor Corporation) are direct manufacturer alternatives meeting all critical electrical parameters. Both maintain 200 V reverse voltage and 8 A current ratings with TO-220AC packaging. MUR820HC0G offers improved reverse recovery time (25 ns versus 35 ns) and extended maximum junction temperature (175°C versus 150°C), providing enhanced thermal performance. MUR820-BP maintains identical reverse recovery time (35 ns) and junction temperature (150°C) to the original part. Both alternatives are in active production and carry AEC-Q101 automotive qualification.

STTH802D (STMicroelectronics) is an acceptable substitute with identical voltage and current ratings. This part features improved reverse recovery time (30 ns) and extended maximum junction temperature (175°C). Forward voltage is slightly elevated at 1.05 V compared to 950 mV, remaining within acceptable operating margins for 8 A applications. The part is in active production with ROHS3 compliance.

ER802_T0_00001 (Panjit International Inc.) provides parametric equivalence with identical electrical specifications to FES8DTHE3/45, including forward voltage (950 mV) and reverse recovery time (35 ns). This part offers superior reverse leakage current performance (1 µA versus 10 µA). The part is in active production with ROHS3 compliance.

Higher Current Alternative - Upgrade Option:

STTH1202D (STMicroelectronics) is a higher-current variant rated for 12 A average rectified current at 200 V reverse voltage. This part is suitable for applications requiring increased current capacity while maintaining voltage compatibility. Forward voltage is elevated to 1.1 V at 12 A, and maximum junction temperature is 175°C. This part is in active production with ROHS3 compliance and represents an upgrade path for designs requiring additional current margin.

Frequently Asked Questions (FAQ)

Q: Can FES8DT-E3/45 be used as a direct replacement for FES8DTHE3/45?

A: Yes. FES8DT-E3/45 is a parametric equivalent with identical electrical specifications. Both parts are rated for 200 V reverse voltage, 8 A average rectified current, 950 mV forward voltage at 8 A, and 35 ns reverse recovery time. The parts are mechanically compatible in TO-220AC through-hole applications. FES8DT-E3/45 is in active production, addressing the obsolete status of FES8DTHE3/45.

Q: What is the difference between MUR820-BP and MUR820HC0G?

A: Both parts meet the critical electrical specifications of 200 V reverse voltage and 8 A current rating. MUR820HC0G offers improved reverse recovery time (25 ns versus 35 ns) and extended maximum junction temperature (175°C versus 150°C). MUR820-BP maintains identical reverse recovery time (35 ns) and junction temperature (150°C) to the original FES8DTHE3/45. Selection depends on thermal requirements and reverse recovery performance needs in the specific application.

Q: Can STTH1202D replace FES8DTHE3/45 in existing designs?

A: STTH1202D is not a direct replacement. While it maintains 200 V reverse voltage and TO-220AC packaging, it is rated for 12 A average rectified current instead of 8 A. Forward voltage is elevated to 1.1 V at 12 A compared to 950 mV at 8 A. STTH1202D is suitable only for applications where increased current capacity is required or where the design can accommodate higher forward voltage drop. Existing designs rated for 8 A should use 8 A-rated alternatives.

Q: Are all substitute parts AEC-Q101 qualified?

A: FES8DTHE3/45, MUR820HC0G, and MUR820-BP carry AEC-Q101 automotive qualification. STTH802D, ER802_T0_00001, and STTH1202D do not list AEC-Q101 qualification in the provided specifications. For automotive applications requiring AEC-Q101 compliance, use FES8DT-E3/45, MUR820HC0G, or MUR820-BP.

Q: What is the impact of forward voltage variation among substitute parts?

A: Forward voltage ranges from 950 mV to 1.05 V at 8 A across the 8 A-rated substitutes. This variation affects power dissipation and thermal performance. At 8 A, a 100 mV increase in forward voltage results in approximately 0.8 W additional power dissipation. Applications with tight thermal budgets should prioritize parts with lower forward voltage (FES8DT-E3/45 and ER802_T0_00001 at 950 mV). Applications with adequate thermal margin can accommodate higher forward voltage alternatives.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed (FES8DT-E3/45, MUR820HC0G, MUR820-BP, STTH802D, ER802_T0_00001, and STTH1202D) are ROHS3 compliant and REACH unaffected, matching the compliance status of FES8DTHE3/45.

Q: What is the significance of reverse recovery time differences?

A: Reverse recovery time (trr) ranges from 25 ns to 35 ns across the substitute parts. Faster recovery (lower trr) reduces switching losses and electromagnetic interference in high-frequency applications. MUR820HC0G offers the fastest recovery at 25 ns, while FES8DT-E3/45, MUR820-BP, and ER802_T0_00001 maintain 35 ns matching the original part. STTH802D provides intermediate performance at 30 ns. Selection depends on switching frequency and EMI requirements in the specific circuit.

Q: Can reverse leakage current variation affect circuit performance?

A: Reverse leakage current ranges from 1 µA to 10 µA at 200 V across the substitute parts. In most applications, this variation has negligible impact on circuit performance. ER802_T0_00001 offers superior leakage performance at 1 µA, while FES8DTHE3/45 and STTH1202D specify 10 µA. Applications with high-impedance circuits or precision analog stages may benefit from lower leakage alternatives, though standard rectifier applications are unaffected by this range.

Q: What packaging options are available for substitutes?

A: All substitute parts use TO-220AC through-hole packaging, maintaining mechanical compatibility with FES8DTHE3/45. Packaging format variations (tube, bulk) affect procurement and handling but do not impact electrical performance or circuit board integration. FES8DT-E3/45 is supplied in tube packaging, MUR820-BP in bulk, and STTH802D, ER802_T0_00001, and STTH1202D in tube packaging.

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