FES8CTHE3/45 Equivalent & Substitute Parts

Part Overview

The FES8CTHE3/45 is a general-purpose rectifier diode manufactured by Vishay General Semiconductor - Diodes Division, rated for 150 V DC reverse voltage and 8 A average rectified current in a through-hole TO-220AC package. This part is classified as obsolete, necessitating identification of active equivalent and substitute components for ongoing design support and procurement continuity. Equivalent parts maintain identical electrical and mechanical specifications, while substitute parts satisfy the same functional requirements within the allowed parameter ranges for this diode category.

Substiute Parts

FES8CTHE3/45
Vishay General Semiconductor - Diodes DivisionIn Stock: 1094FES8CTHE3/45 Datasheet
FES8CTHE3/45
Current Part
FES8CT-E3/45
Vishay General Semiconductor - Diodes DivisionIn Stock: 4266FES8CT-E3/45 Datasheet
FES8CT-E3/45
Parametric Equivalent
SFAF803GHC0G
Taiwan Semiconductor CorporationIn Stock: 895SFAF803GHC0G Datasheet
SFAF803GHC0G
MFR Recommended
ER801A_T0_00001
Panjit International Inc.In Stock: 851ER801A_T0_00001 Datasheet
ER801A_T0_00001
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 150 V
Current - Average Rectified (Io) 8 A
Voltage - Forward (Vf) (Max) @ If 950 mV @ 8 A mV
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns
Current - Reverse Leakage @ Vr 10 µA @ 150 V
Mounting Type Through Hole
Package / Case TO-220-2
Operating Temperature - Junction -55 to 150 °C
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the FES8CTHE3/45 is determined by strict equivalence across the following critical parameters:

  • Voltage Rating: 150 V DC reverse voltage (Vr) maximum
  • Current Rating: 8 A average rectified current (Io)
  • Forward Voltage: 950 mV maximum at 8 A forward current
  • Recovery Characteristics: Fast recovery classification with 35 ns reverse recovery time (trr)
  • Reverse Leakage: Maximum 10 µA at 150 V
  • Package: TO-220-2 through-hole configuration
  • Temperature Range: -55°C to 150°C junction operating temperature
  • Compliance: ROHS3 compliant, MSL 1 (Unlimited)

All substitute parts listed maintain these electrical and mechanical specifications. Packaging format variations (tube versus alternative packaging) do not affect functional equivalence for through-hole mounting applications.

Parameter Comparison

Parameter FES8CTHE3/45 (Main) FES8CT-E3/45 SFAF803GHC0G ER801A_T0_00001
Manufacturer Vishay General Semiconductor Vishay General Semiconductor Taiwan Semiconductor Corporation Panjit International Inc.
Product Status Obsolete Active Active Active
Voltage - DC Reverse (Vr) (Max) 150 V 150 V 150 V 150 V
Current - Average Rectified (Io) 8 A 8 A 8 A 8 A
Voltage - Forward (Vf) (Max) @ If 950 mV @ 8 A 950 mV @ 8 A 950 mV @ 8 A 950 mV @ 8 A
Speed Classification Fast Recovery ≤ 500ns, > 200mA Fast Recovery ≤ 500ns, > 200mA Fast Recovery ≤ 500ns, > 200mA Fast Recovery ≤ 500ns, > 200mA
Reverse Recovery Time (trr) 35 ns 35 ns 35 ns 35 ns
Current - Reverse Leakage @ Vr 10 µA @ 150 V 10 µA @ 150 V 10 µA @ 150 V 1 µA @ 150 V
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-220-2 Full Pack TO-220-2
Supplier Device Package TO-220AC TO-220AC ITO-220AC TO-220AC
Operating Temperature - Junction -55°C to 150°C -55°C to 150°C -55°C to 150°C -55°C to 150°C
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

FES8CT-E3/45 (Vishay General Semiconductor - Diodes Division)

This part is a parametric equivalent to the FES8CTHE3/45 with active product status. All electrical specifications, thermal ratings, and compliance certifications are identical. The primary difference is packaging format (tube versus the original packaging). This part is the direct replacement for the obsolete FES8CTHE3/45 and is recommended as the primary substitute for new designs and existing inventory replenishment.

SFAF803GHC0G (Taiwan Semiconductor Corporation)

This part meets all electrical and mechanical requirements of the FES8CTHE3/45 with active product status. It carries automotive-grade qualification (AEC-Q101) and includes specified capacitance data (90 pF @ 4 V, 1 MHz). The supplier device package designation (ITO-220AC) indicates an isolated tab variant of the TO-220-2 package. This part is suitable for applications requiring automotive qualification or isolated mounting configurations.

ER801A_T0_00001 (Panjit International Inc.)

This part satisfies all electrical specifications with active product status. The reverse leakage current specification (1 µA @ 150 V) is superior to the main part specification (10 µA @ 150 V), representing improved performance in this parameter. All other electrical and thermal characteristics match the FES8CTHE3/45 requirements. This part is suitable for applications where lower reverse leakage is beneficial.

Frequently Asked Questions (FAQ)

Q: Can FES8CT-E3/45 be used as a direct replacement for FES8CTHE3/45?

A: Yes. FES8CT-E3/45 is a parametric equivalent with identical electrical specifications, thermal ratings, and compliance certifications. The packaging format difference (tube) does not affect functional compatibility in through-hole mounting applications.

Q: What is the difference between TO-220AC and ITO-220AC packages?

A: Both are TO-220-2 through-hole packages. The ITO-220AC designation indicates an isolated tab variant, which provides electrical isolation between the mounting tab and the semiconductor junction. Standard TO-220AC packages have a conductive tab. Selection depends on circuit design requirements for tab isolation.

Q: Are all substitute parts automotive-qualified?

A: The FES8CTHE3/45 main part and SFAF803GHC0G carry AEC-Q101 automotive qualification. FES8CT-E3/45 and ER801A_T0_00001 do not list automotive qualification in their specifications. Automotive applications requiring AEC-Q101 certification should use SFAF803GHC0G.

Q: How does reverse leakage current affect part selection?

A: Reverse leakage current is the small current flowing through the diode in reverse bias. The FES8CTHE3/45 specifies 10 µA maximum at 150 V. ER801A_T0_00001 specifies 1 µA maximum, representing lower leakage. Applications sensitive to leakage current may benefit from ER801A_T0_00001, while standard applications are satisfied by any listed substitute.

Q: Can these parts be used interchangeably in existing PCB designs?

A: Yes, all substitute parts use identical TO-220-2 through-hole package geometry and pin configuration. PCB layouts and thermal management designs require no modification. Electrical performance remains equivalent across all listed substitutes.

Q: What is the inventory status for each substitute part?

A: FES8CT-E3/45 has 4200 units in stock, SFAF803GHC0G has 865 units, and ER801A_T0_00001 has 765 units. The original FES8CTHE3/45 has 1027 units listed as obsolete stock.

Request Quote (Ships tomorrow)