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FES16DT Equivalent & Substitute Parts
Part Overview
The FES16DT is a general-purpose rectifier diode manufactured by onsemi, rated for 200 V DC reverse voltage and 16 A average rectified current in a Through Hole TO-220-2 package. This part is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support and procurement continuity. The FES16DT features fast recovery characteristics with a reverse recovery time of 35 ns, suitable for standard rectification applications requiring moderate switching speeds.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 200 | V |
| Current - Average Rectified (Io) | 16 | A |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 8 A | mV |
| Reverse Recovery Time (trr) | 35 | ns |
| Current - Reverse Leakage @ Vr | 10 | µA @ 200 V |
| Speed Classification | Fast Recovery ≤ 500ns, > 200mA (Io) | — |
| Mounting Type | Through Hole | — |
| Package / Case | TO-220-2 | — |
| Operating Temperature - Junction | -65 to 150 | °C |
Substitute Part Grouping Explanation
Substitution of the FES16DT is determined by the following critical parameters:
Mandatory Matching Criteria:
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 16 A or greater
- Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns or less
- Mounting Type: Through Hole
- Package / Case: TO-220-2 or TO-220AC (compatible footprint)
Acceptable Variation Ranges:
- Voltage - Forward (Vf): Within standard rectifier specifications for this voltage class
- Current - Reverse Leakage @ Vr: 5 µA to 10 µA @ 200 V
- Operating Temperature - Junction: Minimum -55°C to maximum 150°C or higher
Substitute parts are classified into two categories:
Direct Equivalents: Parts meeting all mandatory criteria with identical or superior electrical performance at the specified ratings.
Similar Alternatives: Parts meeting voltage and speed requirements but with current ratings of 12 A to 15 A, suitable for applications where the full 16 A rating is not required.
Parameter Comparison
| Parameter | FES16DT (Main) | FES16DT-E3/45 | MUR1620-BP | STTH1202D | STTH1502D | STTH1502DI |
|---|---|---|---|---|---|---|
| Manufacturer | onsemi | Vishay General Semiconductor | Micro Commercial Co | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Status | Obsolete | Active | Active | Active | Active | Active |
| Voltage - DC Reverse (Vr) (Max) | 200 V | 200 V | 200 V | 200 V | 200 V | 200 V |
| Current - Average Rectified (Io) | 16 A | 16 A | 16 A | 12 A | 15 A | 15 A |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 8 A | 975 mV @ 16 A | 975 mV @ 16 A | 1.1 V @ 12 A | 1.1 V @ 15 A | 1.1 V @ 15 A |
| Reverse Recovery Time (trr) | 35 ns | 35 ns | 35 ns | 35 ns | 36 ns | 36 ns |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V | 10 µA @ 200 V | 5 µA @ 200 V | 10 µA @ 200 V | 10 µA @ 200 V | 10 µA @ 200 V |
| Speed Classification | Fast Recovery ≤ 500ns, > 200mA | Fast Recovery ≤ 500ns, > 200mA | Fast Recovery ≤ 500ns, > 200mA | Fast Recovery ≤ 500ns, > 200mA | Fast Recovery ≤ 500ns, > 200mA | Fast Recovery ≤ 500ns, > 200mA |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-2 | TO-220-2 | TO-220-2 | TO-220-2 | TO-220-2 | TO-220-2 Insulated |
| Operating Temperature - Junction | -65 to 150°C | -65 to 150°C | -55 to 150°C | Max 175°C | Max 175°C | Max 175°C |
| RoHS Status | — | ROHS3 Compliant | — | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| REACH Status | REACH Unaffected | REACH Unaffected | REACH Unaffected | REACH Unaffected | REACH Unaffected | REACH Unaffected |
Engineering Selection Recommendations
Direct Equivalent Selection:
The FES16DT-E3/45 (Vishay General Semiconductor) and MUR1620-BP (Micro Commercial Co) are direct equivalents meeting all electrical and mechanical specifications of the FES16DT. Both parts are rated for 200 V, 16 A, with 35 ns reverse recovery time and Through Hole TO-220-2 package compatibility. FES16DT-E3/45 maintains identical operating temperature range (-65 to 150°C) and is ROHS3 compliant. MUR1620-BP offers superior reverse leakage performance (5 µA versus 10 µA) and lower capacitance (65 pF versus 170 pF), with a minimum operating temperature of -55°C. Both parts are currently in active production status.
Similar Alternative Selection:
The STTH1202D, STTH1502D, and STTH1502DI (STMicroelectronics) are similar alternatives suitable for applications where current requirements do not exceed 12 A or 15 A respectively. These parts maintain the 200 V voltage rating, fast recovery characteristics (35-36 ns), and Through Hole TO-220-2 package compatibility. All three are ROHS3 compliant and rated to 175°C maximum junction temperature. The STTH1502DI variant includes insulated package construction (TO-220AC ins), providing additional isolation properties. These alternatives are appropriate for designs with reduced current demands or where enhanced thermal performance (175°C rating) is beneficial.
Compliance Considerations:
All substitute parts maintain REACH Unaffected status consistent with the FES16DT. Active production status of all substitute options ensures long-term availability and supply chain stability compared to the obsolete FES16DT.
Frequently Asked Questions (FAQ)
Q: Can the FES16DT-E3/45 be used as a direct replacement for the FES16DT?
A: Yes. The FES16DT-E3/45 meets all electrical specifications: 200 V reverse voltage, 16 A average rectified current, 35 ns reverse recovery time, and identical operating temperature range. Both use Through Hole TO-220-2 package construction. The primary difference is product status: FES16DT-E3/45 is in active production.
Q: What is the difference between STTH1502D and STTH1502DI?
A: Both parts are electrically identical with 200 V, 15 A ratings and 36 ns reverse recovery time. The STTH1502DI includes insulated package construction (TO-220AC ins), providing electrical isolation between the die and case. Standard STTH1502D uses non-insulated TO-220AC packaging. Selection depends on circuit isolation requirements.
Q: Can STTH1202D replace the FES16DT in all applications?
A: STTH1202D is suitable only for applications where current requirements do not exceed 12 A. It maintains the 200 V voltage rating and 35 ns reverse recovery time. Applications requiring the full 16 A rating must use FES16DT-E3/45, MUR1620-BP, or STTH1502D/STTH1502DI.
Q: What are the key differences between MUR1620-BP and FES16DT-E3/45?
A: Both are 200 V, 16 A direct equivalents with 35 ns reverse recovery time. MUR1620-BP offers lower reverse leakage current (5 µA versus 10 µA) and lower capacitance (65 pF versus 170 pF at 4 V, 1 MHz). MUR1620-BP minimum operating temperature is -55°C versus -65°C for FES16DT-E3/45. Selection depends on leakage and capacitance sensitivity in the application.
Q: Are all substitute parts ROHS3 compliant?
A: FES16DT-E3/45, STTH1202D, STTH1502D, and STTH1502DI are ROHS3 compliant. MUR1620-BP RoHS status is not specified in available documentation. Compliance verification with MUR1620-BP supplier is recommended for applications with mandatory ROHS3 requirements.
Q: What is the maximum junction temperature difference between substitute options?
A: FES16DT and FES16DT-E3/45 are rated to 150°C maximum junction temperature. MUR1620-BP is rated to 150°C. STTH1202D, STTH1502D, and STTH1502DI are rated to 175°C maximum junction temperature. Applications operating near thermal limits benefit from STMicroelectronics options with higher temperature ratings.
Q: Can these parts be used interchangeably in PCB layouts?
A: All substitute parts use Through Hole TO-220-2 or TO-220AC package construction with compatible footprints. Physical pin configuration and mounting hole spacing are identical. STTH1502DI insulated variant may require additional PCB clearance depending on isolation requirements. Standard PCB layouts designed for TO-220-2 accommodate all listed substitutes without modification.
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