FEPF6DTHE3/45 Equivalent & Substitute Parts

Part Overview

The FEPF6DTHE3/45 is a diode array rectifier manufactured by Vishay General Semiconductor - Diodes Division, configured as a 1 Pair Common Cathode with 200 V reverse voltage rating and 6 A average rectified current per diode. The device is packaged in TO-220-3 Full Pack with isolated tab (ITO-220AB) for through-hole mounting applications.

This part carries an Obsolete product status. Identification of equivalent and substitute components is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this rectifier configuration.

Key Parameters

Parameter	Value
Diode Configuration	1 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max)	200 V
Current - Average Rectified (Io) (per Diode)	6 A
Voltage - Forward (Vf) (Max) @ If	975 mV @ 3 A
Speed	Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	35 ns
Current - Reverse Leakage @ Vr	5 µA @ 200 V
Operating Temperature - Junction	-55°C ~ 150°C
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack, Isolated Tab
Supplier Device Package	ITO-220AB
RoHS Status	ROHS3 Compliant
Grade	Automotive
Qualification	AEC-Q101

Substitute Part Grouping Explanation

Substitution of the FEPF6DTHE3/45 is determined by strict equivalence across the following critical parameters:

Primary Substitution Criteria:

Diode Configuration: 1 Pair Common Cathode (mandatory match)
Voltage - DC Reverse (Vr) (Max): 200 V (mandatory match)
Mounting Type: Through Hole (mandatory match)
Package / Case: TO-220-3 Full Pack with isolated tab or standard full pack (compatible variants)

Secondary Compatibility Parameters:

Current - Average Rectified (Io) (per Diode): Minimum 6 A (equal or higher ratings acceptable)
Speed: Fast Recovery ≤ 500ns, > 200mA (Io) (mandatory match)
Operating Temperature Range: Must encompass or exceed -55°C to 150°C
RoHS Compliance: ROHS3 Compliant (mandatory match)

Technology Variants: Substitute parts may employ Standard, Super Barrier, or Avalanche technology provided all electrical parameters remain within acceptable operating ranges for the application.

The following substitute parts meet these criteria and are listed by current product status and current availability:

MURF1620CTG (onsemi) - Active status, 8 A rating
STTH1002CFP (STMicroelectronics) - Active status, 8 A rating
STTH1602CFP (STMicroelectronics) - Active status, 10 A rating
SBR20A200CTFP (Diodes Incorporated) - Active status, 10 A rating, Super Barrier technology
SBR10200CTFP (Diodes Incorporated) - Active status, 5 A rating, Super Barrier technology
RF1601T2D (Rohm Semiconductor) - Active status, 8 A rating
RF1001T2D (Rohm Semiconductor) - Active status, 5 A rating
RF601T2D (Rohm Semiconductor) - Active status, 3 A rating
FFPF20UP20DNTU (onsemi) - Obsolete status, 10 A rating, Avalanche technology
SBR20200CTFP (Diodes Incorporated) - Active status, 10 A rating, Super Barrier technology

Parameter Comparison

Parameter	FEPF6DTHE3/45	MURF1620CTG	STTH1002CFP	STTH1602CFP	SBR20A200CTFP	SBR10200CTFP	RF1601T2D	RF1001T2D	RF601T2D
Manufacturer	Vishay	onsemi	STMicroelectronics	STMicroelectronics	Diodes Inc.	Diodes Inc.	Rohm	Rohm	Rohm
Diode Configuration	1 Pair Common Cathode	1 Pair Common Cathode	1 Pair Common Cathode	1 Pair Common Cathode	1 Pair Common Cathode	1 Pair Common Cathode	1 Pair Common Cathode	1 Pair Common Cathode	1 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max)	200 V	200 V	200 V	200 V	200 V	200 V	200 V	200 V	200 V
Current - Average Rectified (Io) (per Diode)	6 A	8 A	8 A	10 A	10 A	5 A	8 A	5 A	3 A
Voltage - Forward (Vf) (Max) @ If	975 mV @ 3 A	975 mV @ 8 A	1.1 V @ 5 A	1.1 V @ 8 A	860 mV @ 10 A	900 mV @ 5 A	930 mV @ 8 A	930 mV @ 5 A	930 mV @ 3 A
Speed	Fast Recovery ≤ 500ns, > 200mA	Fast Recovery ≤ 500ns, > 200mA	Fast Recovery ≤ 500ns, > 200mA	Fast Recovery ≤ 500ns, > 200mA	Fast Recovery ≤ 500ns, > 200mA	Fast Recovery ≤ 500ns, > 200mA	Fast Recovery ≤ 500ns, > 200mA	Fast Recovery ≤ 500ns, > 200mA	Fast Recovery ≤ 500ns, > 200mA
Reverse Recovery Time (trr)	35 ns	35 ns	25 ns	26 ns	30 ns	20 ns	30 ns	30 ns	25 ns
Current - Reverse Leakage @ Vr	5 µA @ 200 V	5 µA @ 200 V	5 µA @ 200 V	6 µA @ 200 V	100 µA @ 200 V	100 µA @ 200 V	10 µA @ 200 V	10 µA @ 200 V	10 µA @ 200 V
Operating Temperature - Junction	-55°C ~ 150°C	-65°C ~ 150°C	175°C (Max)	175°C (Max)	-65°C ~ 175°C	-65°C ~ 150°C	150°C (Max)	150°C (Max)	150°C (Max)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3 Full Pack, Isolated Tab	TO-220-3 Full Pack	TO-220-3 Full Pack	TO-220-3 Full Pack	TO-220-3 Full Pack, Isolated Tab	TO-220-3 Full Pack, Isolated Tab	TO-220-3 Full Pack	TO-220-3 Full Pack	TO-220-3 Full Pack
Supplier Device Package	ITO-220AB	TO-220FP	TO-220FP	TO-220FP	ITO-220AB	ITO-220AB	TO-220FN	TO-220FN	TO-220FN
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Product Status	Obsolete	Active	Active	Active	Active	Active	Active	Active	Active

Engineering Selection Recommendations

Primary Substitutes (Recommended for New Designs and Ongoing Production):

The following parts are recommended as primary substitutes due to Active product status, full RoHS3 compliance, and superior current availability:

MURF1620CTG (onsemi SWITCHMODE™ Series) - Matches reverse recovery time (35 ns) and reverse leakage current (5 µA @ 200 V) of the original part. Rated for 8 A, providing 33% current margin above the 6 A requirement. Active product status with 17,200 units in stock.
STTH1002CFP (STMicroelectronics) - Rated for 8 A with improved reverse recovery time (25 ns) and reverse leakage (5 µA @ 200 V). Maximum junction temperature of 175°C exceeds original specification. Active status with 33,300 units in stock.
STTH1602CFP (STMicroelectronics) - Rated for 10 A with reverse recovery time of 26 ns and reverse leakage of 6 µA @ 200 V. Provides highest current margin and active product status with 35,200 units in stock.
SBR20A200CTFP (Diodes Incorporated SBR® Series) - Super Barrier technology with 10 A rating and lowest forward voltage (860 mV @ 10 A). Isolated tab package matches original ITO-220AB configuration. Active status with 26,945 units in stock.

Secondary Substitutes (Current Rating Dependent):

RF1601T2D (Rohm Semiconductor) - 8 A rating with 30 ns reverse recovery time. Active status with 2,063 units in stock. Suitable for applications requiring exact 6 A or higher current capacity.
SBR10200CTFP (Diodes Incorporated SBR® Series) - 5 A rating with 20 ns reverse recovery time and isolated tab package. Active status with 20,705 units in stock. Suitable only for applications with maximum 5 A current requirement.
RF1001T2D (Rohm Semiconductor) - 5 A rating with 30 ns reverse recovery time. Active status with 10,300 units in stock. Suitable only for applications with maximum 5 A current requirement.

Obsolete Alternative (Not Recommended for New Designs):

FFPF20UP20DNTU (onsemi) - Avalanche technology with 10 A rating. Obsolete product status. Not recommended for new designs despite technical compatibility.

Not Recommended:

RF601T2D (Rohm Semiconductor) - 3 A rating is below the 6 A requirement of the original part and is unsuitable for direct substitution.
SBR20200CTFP (Diodes Incorporated) - While technically compatible, this part is rated for 10 A with forward voltage specification at 10 mA (not standard measurement condition), limiting direct comparison.

Frequently Asked Questions (FAQ)

Q: Can I use a substitute part with a higher current rating than the original FEPF6DTHE3/45?

A: Yes. The FEPF6DTHE3/45 is rated for 6 A average rectified current per diode. Substitute parts with equal or higher current ratings (8 A, 10 A) are electrically compatible and provide additional design margin. The application circuit will draw only the current required by the load, regardless of the component's maximum rating.

Q: What is the difference between ITO-220AB and TO-220FP packages?

A: Both are TO-220-3 Full Pack configurations suitable for through-hole mounting. ITO-220AB includes an isolated tab for thermal management in applications requiring electrical isolation between the tab and the circuit ground. TO-220FP uses a standard tab connection. For applications originally designed with ITO-220AB, substitutes with ITO-220AB packaging (SBR20A200CTFP, SBR10200CTFP) maintain identical mechanical and electrical interface. Substitutes with TO-220FP packaging require verification that tab isolation is not required in the application.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed in this document carry ROHS3 Compliant status, matching the original FEPF6DTHE3/45 specification.

Q: What does "1 Pair Common Cathode" configuration mean?

A: This diode array contains two independent diodes sharing a common cathode connection. The configuration is essential for bridge rectifier and dual-diode applications. All substitute parts maintain this identical configuration.

Q: Why is the FEPF6DTHE3/45 marked as Obsolete?

A: Obsolete status indicates the manufacturer has discontinued production. Active substitute parts provide equivalent or superior electrical performance with ongoing manufacturing support and supply chain availability.

Q: Can I substitute a part with lower reverse recovery time (trr)?

A: Yes. Lower reverse recovery time (faster switching) is a performance improvement. The FEPF6DTHE3/45 specifies 35 ns. Substitutes with 25 ns, 26 ns, or 30 ns reverse recovery times provide faster switching characteristics, which is beneficial for high-frequency rectification applications.

Q: What is the significance of reverse leakage current specification?

A: Reverse leakage current (specified at 200 V for this part family) indicates the small current flowing through the diode when reverse-biased. The FEPF6DTHE3/45 specifies 5 µA @ 200 V. Substitutes with higher leakage (10 µA, 100 µA) may impact applications with very high impedance or precision measurement requirements. For standard rectification applications, this difference is negligible.

Q: Is the operating temperature range critical for substitution?

A: The FEPF6DTHE3/45 specifies -55°C to 150°C junction temperature range. Substitute parts with equal or wider ranges (such as -65°C to 175°C) are fully compatible. If the application operates within the narrower range of the original part, substitutes with wider ranges present no compatibility issues.

Q: What is the difference between Standard, Super Barrier, and Avalanche diode technologies?

A: These represent different semiconductor junction designs. Standard technology is conventional rectifier design. Super Barrier technology (SBR®) offers lower forward voltage drop and faster recovery. Avalanche technology provides reverse voltage clamping capability. All three technologies are compatible for basic rectification applications. Technology selection depends on specific application requirements for forward voltage, switching speed, or reverse voltage protection.

Q: Can I use STTH1602CFP (10 A) in place of FEPF6DTHE3/45 (6 A)?

A: Yes. STTH1602CFP is fully compatible. It maintains the same 200 V reverse voltage rating, 1 Pair Common Cathode configuration, TO-220-3 Full Pack form factor, and fast recovery speed. The 10 A rating provides additional current capacity margin. The application will operate identically to the original design.

Q: Which substitute offers the best forward voltage performance?

A: SBR20A200CTFP offers the lowest forward voltage at 860 mV @ 10 A, compared to the original part's 975 mV @ 3 A. Lower forward voltage reduces power dissipation and heat generation, improving overall circuit efficiency. This makes SBR20A200CTFP advantageous for high-current or thermally constrained applications.

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