FEPF16DTHE3_A/P Equivalent & Substitute Parts

Part Overview

The FEPF16DTHE3_A/P is a diode array rectifier manufactured by Vishay General Semiconductor - Diodes Division, configured as a 1 Pair Common Cathode with 200 V reverse voltage rating and 8 A average rectified current per diode. This component is packaged in TO-220-3 Full Pack with isolated tab configuration for through-hole mounting applications.

The FEPF16DTHE3_A/P is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this diode array configuration.

Substiute Parts

FEPF16DTHE3_A/P
Vishay General Semiconductor - Diodes DivisionIn Stock: 954FEPF16DTHE3_A/P Datasheet
FEPF16DTHE3_A/P
Current Part
FFPF20UP20DNTU
onsemiIn Stock: 3315FFPF20UP20DNTU Datasheet
FFPF20UP20DNTU
MFR Recommended
RF1601T2D
Rohm SemiconductorIn Stock: 2124RF1601T2D Datasheet
RF1601T2D
MFR Recommended
SBR10200CTFP
Diodes IncorporatedIn Stock: 20754SBR10200CTFP Datasheet
SBR10200CTFP
MFR Recommended
STTH1602CFP
STMicroelectronicsIn Stock: 35285STTH1602CFP Datasheet
STTH1602CFP
MFR Recommended

Key Parameters

Parameter Value
Diode Configuration 1 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) (per Diode) 8 A
Voltage - Forward (Vf) (Max) @ If 950 mV @ 8 A
Speed Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns
Current - Reverse Leakage @ Vr 10 µA @ 200 V
Operating Temperature - Junction -55°C ~ 150°C
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
RoHS Status ROHS3 Compliant
Grade Automotive
Qualification AEC-Q101

Substitute Part Grouping Explanation

Substitution of the FEPF16DTHE3_A/P is determined by the following critical parameters:

Mandatory Matching Parameters:

  • Diode Configuration: 1 Pair Common Cathode
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack

Allowable Variation Parameters:

  • Current - Average Rectified (Io) (per Diode): Equal to or greater than 8 A
  • Voltage - Forward (Vf) (Max) @ If: Within acceptable circuit operating margins
  • Reverse Recovery Time (trr): Fast Recovery classification maintained
  • Operating Temperature - Junction: Must accommodate application requirements
  • Current - Reverse Leakage @ Vr: Within acceptable circuit specifications

Substitute parts must maintain the same diode configuration, reverse voltage rating, through-hole mounting method, and TO-220-3 Full Pack form factor. Current rating may be equal or higher. All substitute parts listed are ROHS3 compliant and suitable for equivalent circuit applications.

Parameter Comparison

Parameter FEPF16DTHE3_A/P (Main) FFPF20UP20DNTU RF1601T2D SBR10200CTFP STTH1602CFP
Manufacturer Vishay General Semiconductor onsemi Rohm Semiconductor Diodes Incorporated STMicroelectronics
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 200 V 200 V 200 V
Current - Average Rectified (Io) (per Diode) 8 A 10 A 8 A 5 A 10 A
Voltage - Forward (Vf) (Max) @ If 950 mV @ 8 A 1.15 V @ 10 A 930 mV @ 8 A 900 mV @ 5 A 1.1 V @ 8 A
Speed Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 45 ns 30 ns 20 ns 26 ns
Current - Reverse Leakage @ Vr 10 µA @ 200 V 100 µA @ 200 V 10 µA @ 200 V 100 µA @ 200 V 6 µA @ 200 V
Operating Temperature - Junction -55°C ~ 150°C -65°C ~ 150°C 150°C (Max) -65°C ~ 150°C 175°C (Max)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack, Isolated Tab TO-220-3 Full Pack
Product Status Obsolete Obsolete Active Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation: RF1601T2D (Rohm Semiconductor)

The RF1601T2D is the preferred substitute for the FEPF16DTHE3_A/P. This part maintains identical electrical specifications (200 V, 8 A, 1 Pair Common Cathode configuration) and is classified as Active product status, ensuring long-term availability and supply chain continuity. The RF1601T2D demonstrates superior reverse recovery time performance (30 ns versus 35 ns) and equivalent reverse leakage characteristics (10 µA @ 200 V). ROHS3 compliance and through-hole TO-220-3 Full Pack mounting are maintained. This part is suitable for direct replacement in existing designs without circuit modification.

Secondary Recommendation: STTH1602CFP (STMicroelectronics)

The STTH1602CFP provides an alternative with higher current rating (10 A versus 8 A) and Active product status. This part offers superior reverse recovery time (26 ns) and lower reverse leakage (6 µA @ 200 V). The maximum junction temperature rating of 175°C exceeds the original specification. ROHS3 compliance is maintained. This part is suitable for applications where higher current capacity and improved thermal performance are beneficial.

Tertiary Recommendation: SBR10200CTFP (Diodes Incorporated)

The SBR10200CTFP utilizes Super Barrier technology and maintains the isolated tab package configuration identical to the original part. This part is Active status with excellent reverse recovery time (20 ns). However, the current rating is reduced to 5 A, limiting its application to circuits operating at or below 5 A per diode. This part is suitable only for applications where 5 A current capacity is sufficient.

Alternative: FFPF20UP20DNTU (onsemi)

The FFPF20UP20DNTU provides higher current rating (10 A) and extended lower temperature range (-65°C). However, this part is classified as Obsolete, which may present future supply chain challenges. Forward voltage characteristics are higher (1.15 V @ 10 A). This part is suitable as a secondary alternative when primary recommendations are unavailable.

Frequently Asked Questions (FAQ)

Q: Can the RF1601T2D directly replace the FEPF16DTHE3_A/P without circuit modification?

A: Yes. The RF1601T2D maintains identical voltage rating (200 V), current rating (8 A), diode configuration (1 Pair Common Cathode), and through-hole TO-220-3 Full Pack mounting. Electrical characteristics are equivalent or superior. No circuit modification is required.

Q: What is the difference between the isolated tab and standard TO-220-3 Full Pack packages?

A: The isolated tab configuration (ITO-220AB) provides electrical isolation between the tab and the diode cathode, reducing thermal coupling to the mounting surface. Standard TO-220-3 Full Pack (TO-220F or TO-220FN) connects the tab to the cathode. The FEPF16DTHE3_A/P uses isolated tab configuration. The RF1601T2D and STTH1602CFP use standard TO-220-3 Full Pack. The SBR10200CTFP maintains isolated tab configuration. Package selection depends on thermal management and isolation requirements in the application circuit.

Q: Why does the STTH1602CFP have a higher current rating (10 A) than the original part (8 A)?

A: The STTH1602CFP is designed for higher current applications. The 10 A rating reflects the maximum average rectified current per diode. This part can be used in circuits designed for 8 A operation without exceeding its specifications. Higher current rating provides design margin and thermal headroom.

Q: Is the SBR10200CTFP suitable for all applications using the FEPF16DTHE3_A/P?

A: No. The SBR10200CTFP has a reduced current rating of 5 A per diode, compared to the original 8 A specification. This part is suitable only for applications operating at or below 5 A per diode. For applications requiring 8 A operation, the RF1601T2D or STTH1602CFP are appropriate selections.

Q: What is the significance of the Reverse Recovery Time (trr) parameter in substitute selection?

A: Reverse Recovery Time indicates the speed at which the diode transitions from forward conduction to reverse blocking. All listed substitute parts maintain Fast Recovery classification (≤ 500ns, > 200mA). The RF1601T2D (30 ns) and STTH1602CFP (26 ns) offer improved performance compared to the original specification (35 ns). The SBR10200CTFP (20 ns) provides the fastest recovery. Faster recovery reduces switching losses and electromagnetic interference in rectifier circuits.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All listed substitute parts (RF1601T2D, STTH1602CFP, SBR10200CTFP, and FFPF20UP20DNTU) are ROHS3 compliant, matching the environmental compliance status of the original FEPF16DTHE3_A/P.

Q: What is the difference between Standard, Avalanche, and Super Barrier diode technologies?

A: The FEPF16DTHE3_A/P uses Standard technology. The FFPF20UP20DNTU uses Avalanche technology, which provides controlled reverse breakdown characteristics. The SBR10200CTFP uses Super Barrier technology, which reduces forward voltage drop and reverse recovery time. All three technologies are suitable for rectifier applications. Technology selection depends on specific circuit requirements for forward voltage, reverse recovery performance, and thermal characteristics.

Q: Can the FFPF20UP20DNTU be used despite its Obsolete status?

A: The FFPF20UP20DNTU is currently available in inventory (3252 Pcs). However, Obsolete product status indicates that the manufacturer has discontinued production and will not support future orders. Use of this part should be limited to applications where primary recommendations (RF1601T2D or STTH1602CFP) are unavailable. Long-term design continuity is not assured with Obsolete parts.

Q: What operating temperature range should be considered when selecting a substitute?

A: The original FEPF16DTHE3_A/P operates from -55°C to 150°C. The RF1601T2D specifies 150°C maximum junction temperature. The STTH1602CFP specifies 175°C maximum, providing higher thermal margin. The SBR10200CTFP and FFPF20UP20DNTU operate from -65°C to 150°C, extending the lower temperature range. Selection depends on the application's operating environment and thermal management design.

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