FDY4001CZ Equivalent & Substitute Parts

Part Overview

The FDY4001CZ is an N and P-Channel MOSFET array manufactured by onsemi, designed for low-voltage switching applications. This device integrates dual-channel functionality in a compact SOT-563F surface mount package with a maximum drain-source voltage rating of 20V and continuous drain current capabilities of 200mA (N-channel) and 150mA (P-channel). The FDY4001CZ is classified as obsolete, necessitating identification of functionally equivalent alternatives for new designs and ongoing production requirements.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	20	V
Continuous Drain Current (Id) @ 25°C	200mA (N-ch), 150mA (P-ch)	mA
On-Resistance (Rds On) @ Id, Vgs	5 @ 200mA, 4.5V	Ohm
Gate Threshold Voltage (Vgs(th)) @ Id	1.5 @ 250µA	V
Gate Charge (Qg) @ Vgs	1.1 @ 4.5V	nC
Input Capacitance (Ciss) @ Vds	60 @ 10V	pF
Maximum Power Dissipation	446	mW
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	SOT-563F	—
Configuration	N and P-Channel	—
FET Feature	Logic Level Gate	—

Substitute Part Grouping Explanation

Substitution eligibility for the FDY4001CZ is determined by the following critical parameters:

Mandatory Matching Criteria:

Drain to Source Voltage (Vdss): 20V
Configuration: N and P-Channel
Package Type: SOT-563F (SOT-563, SOT-666 equivalent)
FET Feature: Logic Level Gate
Operating Temperature Range: -55°C to 150°C

Performance Compatibility Criteria:

Continuous Drain Current (Id): Equal to or greater than 200mA (N-channel) and 150mA (P-channel)
On-Resistance (Rds On): Equal to or lower than 5 Ohm @ 200mA, 4.5V
Gate Threshold Voltage (Vgs(th)): Within acceptable logic-level switching range
Gate Charge (Qg): Comparable switching characteristics
Input Capacitance (Ciss): Comparable input impedance characteristics
Maximum Power Dissipation: Equal to or greater than 446mW

Substitute parts must satisfy all mandatory matching criteria and maintain performance compatibility within the specified electrical parameters.

Parameter Comparison

Parameter	FDY4001CZ	FDY4000CZ	SI1035X-T1-GE3	Unit
Manufacturer	onsemi	onsemi	Vishay Siliconix	—
Product Status	Obsolete	Last Time Buy	Active	—
Drain to Source Voltage (Vdss)	20	20	20	V
Continuous Drain Current (Id) @ 25°C	200mA, 150mA	600mA, 350mA	180mA, 145mA	mA
On-Resistance (Rds On) @ Id, Vgs	5 @ 200mA, 4.5V	0.7 @ 600mA, 4.5V	5 @ 200mA, 4.5V	Ohm
Gate Threshold Voltage (Vgs(th)) @ Id	1.5 @ 250µA	1.5 @ 250µA	0.4 (Min) @ 250µA	V
Gate Charge (Qg) @ Vgs	1.1 @ 4.5V	1.1 @ 4.5V	0.75 @ 4.5V	nC
Input Capacitance (Ciss) @ Vds	60 @ 10V	60 @ 10V	Not specified	pF
Maximum Power Dissipation	446	446	250	mW
Operating Temperature Range	-55 to 150	-55 to 150	-55 to 150	°C (TJ)
Package / Case	SOT-563, SOT-666	SOT-563, SOT-666	SOT-563, SOT-666	—
Supplier Device Package	SOT-563F	SOT-563F	SC-89 (SOT-563F)	—
Configuration	N and P-Channel	N and P-Channel	N and P-Channel	—
FET Feature	Logic Level Gate	Logic Level Gate	Logic Level Gate	—
Series	PowerTrench®	PowerTrench®	TrenchFET®	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	—
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	—
ECCN	EAR99	EAR99	EAR99	—

Engineering Selection Recommendations

FDY4000CZ (onsemi)

The FDY4000CZ is a direct functional substitute for the FDY4001CZ. Both devices share identical voltage ratings (20V Vdss), configuration (N and P-Channel), package format (SOT-563F), and operating temperature range (-55°C to 150°C). The FDY4000CZ provides enhanced current handling capability (600mA N-channel, 350mA P-channel versus 200mA and 150mA respectively) and improved on-resistance characteristics (0.7 Ohm at 600mA versus 5 Ohm at 200mA). The FDY4000CZ is classified as Last Time Buy, indicating continued availability with defined end-of-life parameters. This part is suitable for applications requiring equal or greater current capacity than the original FDY4001CZ specification.

SI1035X-T1-GE3 (Vishay Siliconix)

The SI1035X-T1-GE3 is a cross-manufacturer equivalent with identical voltage rating (20V Vdss), configuration (N and P-Channel), package format (SC-89/SOT-563F), and operating temperature range (-55°C to 150°C). The SI1035X-T1-GE3 provides comparable continuous drain current (180mA N-channel, 145mA P-channel) and on-resistance (5 Ohm at 200mA, 4.5V). The device features lower gate charge (0.75nC versus 1.1nC) and lower maximum power dissipation (250mW versus 446mW). The SI1035X-T1-GE3 is classified as Active product status, ensuring long-term availability and supply continuity. This part is suitable for applications with current requirements at or below the original FDY4001CZ specification and where reduced power dissipation is beneficial.

Frequently Asked Questions (FAQ)

Q: Can the FDY4000CZ replace the FDY4001CZ in all applications?

A: The FDY4000CZ is electrically compatible with the FDY4001CZ for all applications where the original part was specified. The FDY4000CZ provides higher continuous drain current ratings (600mA N-channel, 350mA P-channel) and lower on-resistance, making it suitable for designs with equal or greater current demands. No circuit modifications are required due to identical voltage ratings, package format, and operating temperature range.

Q: What are the key differences between the FDY4000CZ and SI1035X-T1-GE3?

A: Both parts meet the mandatory substitution criteria (20V Vdss, N and P-Channel configuration, SOT-563F package, -55°C to 150°C operating range). The primary differences are: (1) Manufacturer—onsemi versus Vishay Siliconix; (2) Product Status—Last Time Buy versus Active; (3) Current Ratings—FDY4000CZ provides higher continuous drain current (600mA/350mA versus 180mA/145mA); (4) Gate Charge—SI1035X-T1-GE3 has lower gate charge (0.75nC versus 1.1nC); (5) Power Dissipation—SI1035X-T1-GE3 has lower maximum rating (250mW versus 446mW). Selection depends on application current requirements and long-term supply strategy.

Q: Is the SI1035X-T1-GE3 suitable for high-current applications?

A: The SI1035X-T1-GE3 continuous drain current ratings (180mA N-channel, 145mA P-channel) are comparable to the original FDY4001CZ (200mA N-channel, 150mA P-channel). For applications requiring current levels above these specifications, the FDY4000CZ is the appropriate selection due to its higher current capacity (600mA N-channel, 350mA P-channel).

Q: Are there any package compatibility concerns when substituting these parts?

A: All three parts (FDY4001CZ, FDY4000CZ, SI1035X-T1-GE3) utilize the SOT-563F package format with equivalent SOT-563 and SOT-666 designations. Pin configurations and footprints are identical, ensuring direct board-level compatibility without layout modifications.

Q: What is the significance of product status (Obsolete, Last Time Buy, Active)?

A: Product status indicates supply availability and lifecycle stage. The FDY4001CZ (Obsolete) has reached end-of-life with no further production. The FDY4000CZ (Last Time Buy) has defined remaining inventory and a specified end-of-life date. The SI1035X-T1-GE3 (Active) is in full production with indefinite availability. For new designs, the SI1035X-T1-GE3 is recommended to ensure long-term supply continuity.

Q: Do these parts have identical gate threshold voltage characteristics?

A: The FDY4001CZ and FDY4000CZ share identical gate threshold voltage specifications (1.5V maximum @ 250µA). The SI1035X-T1-GE3 has a lower minimum gate threshold voltage (0.4V @ 250µA), indicating faster switching response at lower gate drive voltages. This difference is compatible with logic-level gate drive circuits but may require verification in applications with marginal gate drive voltage levels.

Q: Are regulatory and compliance certifications equivalent across all three parts?

A: All three parts share identical regulatory status: REACH Unaffected, ECCN EAR99, and Moisture Sensitivity Level 1 (Unlimited). The FDY4000CZ and SI1035X-T1-GE3 are both RoHS3 Compliant. Compliance certifications do not present barriers to substitution.

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