FDY4000CZ Equivalent & Substitute Parts

Part Overview

The FDY4000CZ is an N and P-Channel MOSFET array manufactured by onsemi, designed for surface mount applications in the SOT-563F package. This dual-channel device operates at 20V with continuous drain currents of 600mA (N-channel) and 350mA (P-channel), delivering up to 446mW power dissipation. The device features logic level gate operation with a gate threshold voltage of 1.5V maximum at 250µA.

The FDY4000CZ carries a Last Time Buy product status, indicating that onsemi has discontinued this part number. Identifying equivalent substitute components is necessary to ensure design continuity and maintain supply chain reliability for applications currently utilizing this device.

Substiute Parts

FDY4000CZ

onsemiIn Stock: 38387FDY4000CZ Datasheet

Current PartRFQ

SI1016X-T1-GE3

Vishay SiliconixIn Stock: 74447SI1016X-T1-GE3 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the FDY4000CZ is determined by strict equivalence across the following critical parameters:

Voltage Rating: Both the main part and substitute must maintain a Drain to Source Voltage (Vdss) of 20V to ensure safe operation within the same circuit topology.

Package Compatibility: The SOT-563F package designation is mandatory for direct mechanical and electrical compatibility with existing PCB layouts and assembly processes.

Channel Configuration: Both devices must provide N and P-Channel MOSFET functionality in a single package to maintain dual-channel operation.

Logic Level Gate Operation: The substitute must feature logic level gate characteristics to ensure compatibility with standard digital control signals.

Operating Temperature Range: The substitute must support the full -55°C to 150°C junction temperature range to maintain thermal performance equivalence.

The SI1016X-T1-GE3 from Vishay Siliconix meets these substitution criteria. While the continuous drain currents (485mA N-channel, 370mA P-channel) and maximum power dissipation (250mW) are lower than the FDY4000CZ, the device maintains electrical compatibility within the specified voltage and package constraints. The SI1016X-T1-GE3 is classified as an Active product, ensuring ongoing availability and supply chain support.

Parameter Comparison

Engineering Selection Recommendations

FDY4000CZ (onsemi): This part carries a Last Time Buy status, indicating end-of-life designation. While currently in stock with 38,300 pieces available, procurement of this device should be limited to immediate production requirements only. No new designs should incorporate this part number.

SI1016X-T1-GE3 (Vishay Siliconix): This substitute carries an Active product status with 74,400 pieces in inventory, ensuring long-term availability and supply chain stability. Both devices maintain ROHS3 compliance, MSL Level 1 (Unlimited moisture sensitivity), and REACH Unaffected status, satisfying regulatory requirements for industrial and commercial applications.

The SI1016X-T1-GE3 is the appropriate selection for new designs and production transitions from the FDY4000CZ. The lower continuous drain current ratings and reduced maximum power dissipation require thermal and current capacity verification within the target application, but the device maintains full electrical compatibility at the specified voltage rating and package form factor.

Frequently Asked Questions (FAQ)

Q: Can the SI1016X-T1-GE3 directly replace the FDY4000CZ in existing designs?

A: Direct replacement is possible from a package and voltage perspective. Both devices use the SOT-563F package and operate at 20V. However, the SI1016X-T1-GE3 has lower continuous drain current ratings (485mA N-channel vs. 600mA, 370mA P-channel vs. 350mA) and reduced maximum power dissipation (250mW vs. 446mW). Circuit designs must be evaluated to confirm that application current and thermal requirements do not exceed the SI1016X-T1-GE3 specifications.

Q: Are there package compatibility concerns between SOT-563F and SC-89?

A: The SC-89 designation is equivalent to SOT-563F. Both refer to the same physical package form factor used for surface mount dual MOSFET arrays. No PCB layout or assembly modifications are required.

Q: What are the key differences in gate characteristics between these devices?

A: The SI1016X-T1-GE3 has a lower gate threshold voltage (1.0V maximum vs. 1.5V maximum) and reduced gate charge (0.75nC vs. 1.1nC). These differences result in faster switching response and lower gate drive power requirements. Both devices maintain logic level gate operation compatible with standard digital control circuits.

Q: Do both devices meet the same regulatory and compliance standards?

A: Yes. Both the FDY4000CZ and SI1016X-T1-GE3 are ROHS3 compliant, carry MSL Level 1 (Unlimited) moisture sensitivity ratings, and maintain REACH Unaffected status. Both devices are suitable for applications requiring these regulatory certifications.

Q: Why is the FDY4000CZ designated as Last Time Buy?

A: Last Time Buy status indicates that onsemi has discontinued this product line. Existing inventory will be depleted without replenishment. Customers must transition to alternative part numbers for continued supply. The SI1016X-T1-GE3 provides functional and electrical equivalence for this transition.

Q: What thermal considerations apply when substituting these devices?

A: The SI1016X-T1-GE3 has a maximum power dissipation of 250mW compared to 446mW for the FDY4000CZ. Applications operating near the thermal limits of the original design must be re-evaluated. Thermal management, PCB copper area, and ambient operating conditions should be verified to ensure the substitute device remains within safe operating limits.