FDY3001NZ Equivalent & Substitute Parts

Part Overview

The FDY3001NZ is a dual N-channel MOSFET array manufactured by onsemi, designed for surface mount applications in the SOT-563F package. This device features a 20V drain-to-source voltage rating with a continuous drain current of 200mA and logic level gate operation. The product is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, gate threshold characteristics, and thermal performance while accommodating the surface mount package format.

Key Parameters

Parameter	FDY3001NZ	Unit
Drain to Source Voltage (Vdss)	20	V
Continuous Drain Current (Id) @ 25°C	200	mA
Rds On (Max) @ Id, Vgs	5 @ 200mA, 4.5V	Ohm
Vgs(th) (Max) @ Id	1.5 @ 250µA	V
Gate Charge (Qg) (Max) @ Vgs	1.1 @ 4.5V	nC
Input Capacitance (Ciss) (Max) @ Vds	60 @ 10V	pF
Power - Max	446	mW
Operating Temperature Range	-55 to 150	°C (TJ)
Configuration	2 N-Channel (Dual)	—
Package / Case	SOT-563, SOT-666	—
FET Feature	Logic Level Gate	—

Substitute Part Grouping Explanation

Substitution eligibility for the FDY3001NZ is determined by strict alignment across the following critical parameters:

Voltage and Current Ratings: All substitute parts must maintain the 20V Vdss rating to ensure compatibility with circuit voltage specifications. Continuous drain current (Id) must equal or exceed 200mA to support the intended load requirements.

Gate Characteristics: Vgs(th) threshold voltage must remain within acceptable operating margins. The logic level gate feature requires gate threshold values compatible with standard digital logic signal levels.

On-State Resistance (Rds On): The maximum on-state resistance of 5 Ohm at specified conditions establishes the conduction loss profile. Substitute parts with equal or lower Rds On values maintain or improve thermal performance.

Thermal and Capacitive Properties: Maximum power dissipation of 446mW and input capacitance of 60pF at 10V define the thermal and switching characteristics. Gate charge of 1.1nC at 4.5V establishes switching speed parameters.

Package Compatibility: All substitutes must utilize the SOT-563F surface mount package to ensure mechanical and electrical compatibility with existing PCB layouts.

Configuration: Dual N-channel configuration is mandatory for direct substitution.

Parameter Comparison

Parameter	FDY3001NZ	FDY3000NZ	SI1034X-T1-GE3	Unit
Manufacturer	onsemi	onsemi	Vishay Siliconix	—
Drain to Source Voltage (Vdss)	20	20	20	V
Continuous Drain Current (Id) @ 25°C	200	600	180	mA
Rds On (Max) @ Id, Vgs	5 @ 200mA, 4.5V	0.7 @ 600mA, 4.5V	5 @ 200mA, 4.5V	Ohm
Vgs(th) (Max) @ Id	1.5 @ 250µA	1.3 @ 250µA	1.2 @ 250µA	V
Gate Charge (Qg) (Max) @ Vgs	1.1 @ 4.5V	1.1 @ 4.5V	0.75 @ 4.5V	nC
Input Capacitance (Ciss) (Max) @ Vds	60 @ 10V	60 @ 10V	Not specified	pF
Power - Max	446	446	250	mW
Operating Temperature Range	-55 to 150	-55 to 150	-55 to 150	°C (TJ)
Configuration	2 N-Channel (Dual)	2 N-Channel (Dual)	2 N-Channel (Dual)	—
Package / Case	SOT-563, SOT-666	SOT-563, SOT-666	SOT-563, SOT-666	—
FET Feature	Logic Level Gate	Logic Level Gate	Logic Level Gate	—
Product Status	Obsolete	Last Time Buy	Active	—
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

FDY3000NZ (onsemi): This substitute provides identical voltage and gate charge specifications with enhanced current handling capability (600mA versus 200mA). The lower on-state resistance (0.7 Ohm) improves thermal efficiency. The part maintains the same 446mW power rating and operating temperature range. Product status is Last Time Buy, indicating limited future availability. RoHS3 compliance is confirmed. This substitute is suitable for applications requiring the same voltage class with potential for higher current operation within thermal constraints.

SI1034X-T1-GE3 (Vishay Siliconix): This substitute maintains the 20V voltage rating and logic level gate operation with comparable on-state resistance (5 Ohm at 200mA, 4.5V). The continuous drain current rating of 180mA is marginally lower than the FDY3001NZ. Gate charge is reduced to 0.75nC, providing faster switching characteristics. Maximum power dissipation is 250mW, which is lower than the FDY3001NZ. Product status is Active, ensuring long-term availability. RoHS3 compliance is confirmed. This substitute is suitable for applications where the 180mA current rating is sufficient and lower power dissipation is beneficial.

Compliance and Availability: Both substitute parts maintain REACH Unaffected status and EAR99 ECCN classification consistent with the original part. The SI1034X-T1-GE3 offers the advantage of active product status with established supply chain availability. The FDY3000NZ remains available but with Last Time Buy status, requiring consideration of long-term procurement strategy.

Frequently Asked Questions (FAQ)

Q: Can the FDY3000NZ replace the FDY3001NZ in all applications?

A: The FDY3000NZ maintains identical voltage rating (20V Vdss) and gate charge (1.1nC) specifications. The primary difference is the higher continuous drain current rating (600mA versus 200mA) and lower on-state resistance (0.7 Ohm versus 5 Ohm). Direct substitution is permissible in applications where the 200mA current requirement is not exceeded. The improved thermal characteristics of the FDY3000NZ provide operational margin in current-limited designs.

Q: What are the limitations of the SI1034X-T1-GE3 as a substitute?

A: The SI1034X-T1-GE3 has a continuous drain current rating of 180mA, which is below the FDY3001NZ specification of 200mA. Applications requiring sustained operation at or near 200mA may exceed the device rating. The maximum power dissipation is 250mW compared to 446mW for the FDY3001NZ, indicating reduced thermal headroom. Input capacitance is not specified for the SI1034X-T1-GE3, limiting detailed switching analysis. This substitute is appropriate for applications operating below 180mA continuous current.

Q: Are all three parts pin-compatible?

A: All three parts utilize the SOT-563F package format with identical pinout configuration for dual N-channel MOSFET arrays. Physical and electrical pin compatibility is confirmed across FDY3001NZ, FDY3000NZ, and SI1034X-T1-GE3. PCB layout modifications are not required for substitution.

Q: What is the significance of the Last Time Buy status for FDY3000NZ?

A: Last Time Buy status indicates that onsemi has announced end-of-life for the FDY3000NZ. Existing inventory remains available for purchase, but production has ceased or will cease. For new designs or long-term production requirements, the SI1034X-T1-GE3 with Active status is recommended to ensure sustained component availability.

Q: How do gate threshold voltages compare across the three parts?

A: The FDY3001NZ specifies Vgs(th) of 1.5V at 250µA. The FDY3000NZ specifies 1.3V, and the SI1034X-T1-GE3 specifies 1.2V. All values remain within the logic level gate classification and are compatible with standard 3.3V and 5V digital logic signal levels. The lower threshold values of the substitutes provide improved gate drive margin with reduced gate voltage requirements.

Q: What packaging options are available for these parts?

A: All three parts are available in SOT-563 and SOT-666 package designations. The supplier device package designation is SOT-563F for all parts. Tape & Reel (TR) packaging is specified for the SI1034X-T1-GE3, while Cut Tape (CT) packaging is specified for the FDY3000NZ. The FDY3001NZ packaging format is not specified in the provided data.

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