FDY2000PZ Equivalent & Substitute Parts

Part Overview

The FDY2000PZ is a dual P-channel MOSFET array manufactured by onsemi in the PowerTrench® series. This component is rated for 20V drain-to-source voltage with a continuous drain current of 350mA and is housed in a SOT-563F surface mount package. The device features logic level gate operation and is designed for low-power switching applications requiring compact form factors.

The FDY2000PZ carries an obsolete product status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Substiute Parts

FDY2000PZ

onsemiIn Stock: 3567FDY2000PZ Datasheet

Current PartRFQ

FDY1002PZ

onsemiIn Stock: 20285FDY1002PZ Datasheet

DirectRFQ

EM6J1T2R

Rohm SemiconductorIn Stock: 8530EM6J1T2R Datasheet

SimilarRFQ

PMDT670UPE,115

Nexperia USA Inc.In Stock: 9465PMDT670UPE,115 Datasheet

SimilarRFQ

SI1023X-T1-GE3

Vishay SiliconixIn Stock: 16902SI1023X-T1-GE3 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the FDY2000PZ are identified based on the following critical parameters that determine functional compatibility:

Mandatory Matching Criteria:

• Drain to Source Voltage (Vdss): 20V
• Configuration: 2 P-Channel (Dual)
• Technology: MOSFET (Metal Oxide)
• FET Feature: Logic Level Gate
• Mounting Type: Surface Mount
• Operating Temperature Range: -55°C to 150°C minimum

Performance Parameters Allowing Substitution:

• Continuous Drain Current (Id): Equal to or greater than 350mA
• Rds On: Equal to or lower than 1.2 Ohm at rated conditions
• Gate Threshold Voltage (Vgs(th)): Within acceptable logic level range
• Gate Charge (Qg): Comparable to minimize switching losses
• Input Capacitance (Ciss): Comparable for circuit timing consistency
• Maximum Power Dissipation: Equal to or greater than 446mW

Package Compatibility:

• Primary package: SOT-563F (SC-89)
• Alternative package: SOT-666 (pin-compatible variants)

Substitutes are grouped into direct replacements (higher current capability, same voltage class) and similar alternatives (comparable performance within specified parameters).

Parameter Comparison

Engineering Selection Recommendations

FDY1002PZ (onsemi) - Direct Replacement

The FDY1002PZ is the primary substitute for the FDY2000PZ. Both components are manufactured by onsemi within the PowerTrench® series and share identical voltage ratings, package type (SOT-563F), and operating temperature range. The FDY1002PZ provides enhanced current capability (830mA versus 350mA) with improved on-resistance characteristics (0.5 Ohm versus 1.2 Ohm). The FDY1002PZ carries an active product status, ensuring long-term availability and supply chain continuity. This component is suitable for direct substitution in applications where the higher current rating does not create thermal or layout constraints.

SI1023X-T1-GE3 (Vishay Siliconix) - Pin-Compatible Alternative

The SI1023X-T1-GE3 is a Vishay TrenchFET® device offering comparable performance to the FDY2000PZ. It maintains the same 20V voltage rating, dual P-channel configuration, and SOT-563F package. Current capability (370mA) closely matches the original specification. The SI1023X-T1-GE3 features a lower gate threshold voltage (450mV minimum) compared to the FDY2000PZ (1.5V maximum), which may require circuit evaluation for gate drive compatibility. This component is actively supported and available in high inventory quantities.

PMDT670UPE,115 (Nexperia USA Inc.) - Automotive-Qualified Alternative

The PMDT670UPE,115 is a TrenchMOS™ device from Nexperia with automotive qualification (AEC-Q101). It meets the 20V voltage requirement and dual P-channel configuration. Current capability (550mA) exceeds the FDY2000PZ specification. The component is housed in SOT-666 package, which is pin-compatible with SOT-563F variants. The PMDT670UPE,115 carries a "Not For New Designs" status, limiting its suitability for new applications but remaining available for legacy system support.

EM6J1T2R (Rohm Semiconductor) - Lower Current Alternative

The EM6J1T2R is a Rohm dual P-channel MOSFET with 20V rating and logic level gate operation. Current capability (200mA) is lower than the FDY2000PZ specification, making this component suitable only for applications with reduced current requirements. Maximum power dissipation (150mW) is significantly lower than the original part. This component is actively produced and available. Substitution requires verification that circuit current demands do not exceed 200mA.

Frequently Asked Questions (FAQ)

Q: Can the FDY1002PZ be used as a direct replacement for the FDY2000PZ without circuit modifications?

A: Yes. The FDY1002PZ is a direct substitute from the same manufacturer with identical voltage rating, package type, and operating temperature range. The higher current rating (830mA versus 350mA) and lower on-resistance (0.5 Ohm versus 1.2 Ohm) provide improved performance margins. No circuit modifications are required for standard switching applications.

Q: What is the primary difference between the SI1023X-T1-GE3 and the FDY2000PZ?

A: Both devices share the same 20V voltage rating, dual P-channel configuration, and SOT-563F package. The SI1023X-T1-GE3 features a significantly lower gate threshold voltage (450mV minimum versus 1.5V maximum), which may affect gate drive circuit compatibility. Current capability is comparable (370mA versus 350mA). Gate charge and input capacitance are similar.

Q: Why is the PMDT670UPE,115 marked as "Not For New Designs"?

A: The "Not For New Designs" status indicates that Nexperia has designated this component for legacy support only. While the part remains available and functional, the manufacturer recommends using alternative components for new circuit designs. This status does not affect the electrical performance of existing applications.

Q: Is the EM6J1T2R suitable for all applications using the FDY2000PZ?

A: No. The EM6J1T2R has a maximum continuous drain current of 200mA, which is lower than the FDY2000PZ specification of 350mA. This component is suitable only for applications with current requirements not exceeding 200mA. Maximum power dissipation (150mW) is also significantly reduced. Circuit evaluation is required before substitution.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed (FDY1002PZ, SI1023X-T1-GE3, PMDT670UPE,115, and EM6J1T2R) are RoHS3 compliant with MSL rating of 1 (Unlimited). All components are REACH unaffected and classified under ECCN EAR99.

Q: What package compatibility exists between SOT-563F and SOT-666?

A: SOT-563F and SOT-666 are pin-compatible packages for dual MOSFET arrays. The PMDT670UPE,115 is supplied in SOT-666 package and can be used in applications designed for SOT-563F footprints. Physical dimensions differ slightly, but electrical pin assignments are equivalent for dual P-channel configurations.

Q: Which substitute part offers the best performance improvement over the FDY2000PZ?

A: The FDY1002PZ provides the most significant performance improvement with 2.4× higher current capability (830mA versus 350mA) and 58% lower on-resistance (0.5 Ohm versus 1.2 Ohm). Both components are from onsemi and share identical package and voltage specifications, making this the optimal upgrade path for applications requiring higher current handling.

Q: Can the SI1023X-T1-GE3 be used in gate drive circuits designed for the FDY2000PZ?

A: The SI1023X-T1-GE3 has a lower gate threshold voltage (450mV minimum) compared to the FDY2000PZ (1.5V maximum). Gate drive circuits must be evaluated to ensure adequate voltage margin above the threshold voltage. The lower threshold may allow operation with reduced gate drive voltage, but circuit-specific verification is required.