FDWS9510L-F085 Equivalent & Substitute Parts

Part Overview

The FDWS9510L-F085 is a P-Channel MOSFET manufactured by onsemi, rated for 40V drain-to-source voltage with 50A continuous drain current at 25°C. This device is housed in an 8-DFN (5.1x6.3) surface mount package and is part of the PowerTrench® series. The part is currently classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement continuity.

Substiute Parts

FDWS9510L-F085
onsemiIn Stock: 15460FDWS9510L-F085 Datasheet
FDWS9510L-F085
Current Part
NVMFS014P04M8LT1G
onsemiIn Stock: 1798NVMFS014P04M8LT1G Datasheet
NVMFS014P04M8LT1G
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type P-Channel
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 50 A (Tc)
Rds On (Max) @ Id, Vgs 13.5 mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10V
Power Dissipation (Max) 75 W (Tj)
Operating Temperature Range -55 to 175 °C (TJ)
Mounting Type Surface Mount
Package 8-DFN (5.1x6.3)
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the FDWS9510L-F085 is determined by strict equivalence across the following electrical and mechanical parameters:

Electrical Equivalence Criteria:

  • FET Type: P-Channel topology
  • Drain to Source Voltage (Vdss): 40V minimum rating
  • Continuous Drain Current (Id): Capability to support 50A at 25°C
  • On-State Resistance (Rds On): Maximum 13.5 mOhm at specified gate voltage
  • Gate Charge (Qg): Switching characteristics within acceptable range
  • Power Dissipation: Thermal capability of 75W (Tj)
  • Operating Temperature Range: -55°C to 175°C

Mechanical Equivalence Criteria:

  • Mounting Type: Surface Mount
  • Package Classification: 8-DFN or equivalent footprint compatibility
  • Lead Configuration: Pin count and spacing compatibility

Compliance Criteria:

  • RoHS3 Compliance
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)

The NVMFS014P04M8LT1G meets these substitution criteria with equivalent electrical performance and package compatibility, though with differences in absolute current ratings and thermal specifications under different measurement conditions.

Parameter Comparison

Parameter FDWS9510L-F085 NVMFS014P04M8LT1G Unit
Manufacturer onsemi onsemi
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 40 V
Current - Continuous Drain (Id) @ 25°C 50 (Tc) 52.1 (Tc) A
Rds On (Max) @ Vgs 13.5 @ 50A, 10V 13.8 @ 15A, 10V mOhm
Gate Charge (Qg) (Max) @ Vgs 37 @ 10V 26.5 @ 10V nC
Vgs (Max) ±16 ±20 V
Input Capacitance (Ciss) (Max) @ Vds 2320 @ 20V 1734 @ 20V pF
Power Dissipation (Max) 75 (Tj) 60 (Tc) W
Operating Temperature Range -55 to 175 -55 to 175 °C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 8-PowerTDFN 8-PowerTDFN, 5 Leads
RoHS Status ROHS3 Compliant ROHS3 Compliant
MSL 1 (Unlimited) 1 (Unlimited)
Product Status Obsolete Active

Engineering Selection Recommendations

The NVMFS014P04M8LT1G is a direct substitute for the obsolete FDWS9510L-F085 based on the following engineering criteria:

Electrical Compatibility: Both devices share identical 40V Vdss ratings and support continuous drain currents exceeding 50A at 25°C (Tc measurement condition). On-state resistance specifications are equivalent within acceptable engineering tolerances (13.5 mOhm vs. 13.8 mOhm). Gate charge characteristics are favorable in the substitute part (26.5 nC vs. 37 nC), indicating improved switching performance. Operating temperature ranges are identical across both devices.

Compliance and Certification: Both parts maintain ROHS3 compliance and unlimited moisture sensitivity level (MSL 1), ensuring compatibility with modern manufacturing and environmental standards. The NVMFS014P04M8LT1G carries AEC-Q101 automotive qualification, providing additional reliability assurance for applications requiring automotive-grade components.

Product Status: The NVMFS014P04M8LT1G is classified as active, ensuring long-term availability and supply chain continuity compared to the obsolete FDWS9510L-F085.

Package Considerations: Both devices utilize 8-PowerTDFN surface mount packages with compatible footprints. The NVMFS014P04M8LT1G is specified as 5-DFN (5x6) with 8-SOFL designation, maintaining mechanical compatibility with existing PCB layouts designed for the FDWS9510L-F085.

Frequently Asked Questions (FAQ)

Q: Can the NVMFS014P04M8LT1G directly replace the FDWS9510L-F085 in existing designs?

A: Yes. Both devices are P-Channel MOSFETs with 40V Vdss ratings, equivalent on-state resistance specifications, and compatible 8-PowerTDFN surface mount packages. Electrical performance and thermal characteristics support direct substitution in applications designed for the FDWS9510L-F085.

Q: What are the key differences between these two parts?

A: The primary differences are product status (obsolete vs. active), gate charge (37 nC vs. 26.5 nC), and automotive qualification (NVMFS014P04M8LT1G includes AEC-Q101). The substitute part exhibits lower gate charge, which may improve switching speed in gate-drive-limited applications. Power dissipation specifications differ in measurement conditions (75W Tj vs. 60W Tc), but both support the thermal requirements of typical applications.

Q: Are the packages physically compatible?

A: Yes. Both parts use 8-PowerTDFN surface mount packages with compatible footprints. The FDWS9510L-F085 is specified as 8-DFN (5.1x6.3), and the NVMFS014P04M8LT1G is specified as 5-DFN (5x6) with 8-SOFL designation. These packages are mechanically interchangeable on standard PCB layouts.

Q: Does the NVMFS014P04M8LT1G meet the same compliance requirements?

A: Yes. Both parts are ROHS3 compliant with MSL 1 (unlimited moisture sensitivity). The NVMFS014P04M8LT1G additionally carries AEC-Q101 automotive qualification, providing enhanced reliability certification for automotive and high-reliability applications.

Q: What is the continuous drain current rating difference?

A: The FDWS9510L-F085 is rated for 50A (Tc) continuous drain current, while the NVMFS014P04M8LT1G is rated for 52.1A (Tc). Both exceed the 50A requirement, ensuring adequate current handling capability in substitution scenarios.

Q: How do the gate charge specifications affect circuit performance?

A: The NVMFS014P04M8LT1G exhibits lower gate charge (26.5 nC vs. 37 nC at 10V), resulting in faster switching transitions and reduced gate drive power requirements. This characteristic is beneficial in high-frequency switching applications and may reduce overall system power dissipation.

Q: Is the substitute part suitable for automotive applications?

A: The NVMFS014P04M8LT1G carries AEC-Q101 automotive qualification, making it suitable for automotive-grade applications. The FDWS9510L-F085 does not specify automotive qualification. If automotive compliance is required, the NVMFS014P04M8LT1G is the appropriate selection.

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