FDWS9508L-F085 Equivalent & Substitute Parts

Part Overview

The FDWS9508L-F085 is a P-Channel MOSFET manufactured by onsemi, rated for 40V drain-to-source voltage with 80A continuous drain current at 25°C. This device is housed in an 8-PQFN (5x6) surface mount package and qualifies under the PowerTrench® series with AEC-Q101 automotive certification. The part is currently listed as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and production continuity. Equivalent parts maintain identical electrical and mechanical specifications, while substitute parts provide functional alternatives within acceptable parameter ranges for the same application category.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Drain to Source Voltage (Vdss)	40	V
Current - Continuous Drain (Id) @ 25°C	80	A (Tc)
Rds On (Max) @ Id, Vgs	4.9	mOhm @ 80A, 10V
Vgs(th) (Max) @ Id	3	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	107	nC @ 10V
Power Dissipation (Max)	214	W (Tj)
Operating Temperature Range	-55 to 175	°C (TJ)
Mounting Type	Surface Mount	—
Package	8-PQFN (5x6)	—
Grade	Automotive	—
Qualification	AEC-Q101	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the FDWS9508L-F085 is determined by the following critical parameters: FET channel type (P-Channel), drain-to-source voltage rating (40V minimum), continuous drain current capability, on-resistance characteristics, gate charge, power dissipation capacity, and automotive-grade qualification with AEC-Q101 certification. Substitute parts must maintain compatibility with the 8-PQFN (5x6) surface mount package footprint or equivalent mechanical dimensions to ensure PCB layout compatibility. The operating temperature range of -55°C to 175°C must be supported. All substitute components must retain ROHS3 compliance and automotive-grade qualification status.

The FDWS9508L_F085 (with underscore notation) is classified as a parametric equivalent, maintaining identical electrical specifications and package designation. The NVMFS3D0P04M8LT1G represents a functional substitute with modified current ratings and on-resistance characteristics while preserving the 40V voltage rating, automotive qualification, and surface mount configuration.

Parameter Comparison

Parameter	FDWS9508L-F085 (Main)	FDWS9508L_F085 (Equivalent)	NVMFS3D0P04M8LT1G (Substitute)
Manufacturer	onsemi	onsemi	onsemi
FET Type	P-Channel	P-Channel	P-Channel
Drain to Source Voltage (Vdss)	40 V	40 V	40 V
Current - Continuous Drain (Id) @ 25°C	80 A (Tc)	80 A (Tc)	28 A (Ta), 183 A (Tc)
Rds On (Max) @ Id, Vgs	4.9 mOhm @ 80A, 10V	4.9 mOhm @ 80A, 10V	2.7 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	3 V @ 250µA	3 V @ 250µA	2.4 V @ 2mA
Gate Charge (Qg) (Max) @ Vgs	107 nC @ 10V	107 nC @ 10V	124 nC @ 10V
Vgs (Max)	±16 V	±16 V	±20 V
Input Capacitance (Ciss) (Max) @ Vds	4840 pF @ 20V	4840 pF @ 20V	5827 pF @ 20V
Power Dissipation (Max)	214 W (Tj)	214 W (Tj)	3.9 W (Ta), 171 W (Tc)
Operating Temperature Range	-55 to 175 °C (TJ)	-55 to 175 °C (TJ)	-55 to 175 °C (TJ)
Grade	Automotive	Automotive	Automotive
Qualification	AEC-Q101	AEC-Q101	AEC-Q101
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Package / Case	8-PowerTDFN	8-PowerTDFN	8-PowerTDFN, 5 Leads
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Product Status	Obsolete	Active	Active

Engineering Selection Recommendations

FDWS9508L_F085 (Parametric Equivalent): This part is the primary replacement for the obsolete FDWS9508L-F085. It maintains identical electrical specifications, including 80A continuous drain current, 4.9 mOhm on-resistance at 80A and 10V gate-source voltage, and 214W power dissipation. The parametric equivalent shares the same 8-PQFN (5x6) package footprint and PowerTrench® series designation. Critically, this part holds active product status with AEC-Q101 automotive qualification and ROHS3 compliance, ensuring long-term availability and regulatory compliance for production designs.

NVMFS3D0P04M8LT1G (Functional Substitute): This substitute part is suitable for applications where the continuous drain current requirement can be met by the 183A (Tc) rating, despite the lower ambient temperature rating of 28A (Ta). The NVMFS3D0P04M8LT1G provides superior on-resistance performance at 2.7 mOhm @ 30A and 10V, resulting in lower power dissipation and improved thermal efficiency. The substitute maintains the 40V voltage rating, automotive-grade qualification, AEC-Q101 certification, and ROHS3 compliance. However, the package configuration differs slightly (5-DFN with 8-SOFL designation versus 8-PQFN), requiring PCB layout verification for mechanical compatibility. The higher gate charge of 124 nC and increased input capacitance of 5827 pF may affect switching characteristics in high-frequency applications.

Selection between the parametric equivalent and functional substitute depends on application-specific requirements: the parametric equivalent is recommended for direct replacement with identical performance characteristics, while the functional substitute is appropriate for designs prioritizing reduced on-resistance and thermal performance with tolerance for package footprint modification.

Frequently Asked Questions (FAQ)

Q: Can the FDWS9508L_F085 be used as a direct replacement for the FDWS9508L-F085?

A: Yes. The FDWS9508L_F085 is a parametric equivalent with identical electrical specifications and package designation. It maintains the same 80A continuous drain current, 4.9 mOhm on-resistance, 214W power dissipation, and 8-PQFN (5x6) footprint. The primary difference is product status: the equivalent is active, ensuring continued availability.

Q: What are the key differences between the FDWS9508L-F085 and NVMFS3D0P04M8LT1G?

A: Both parts share the 40V voltage rating, automotive qualification, and AEC-Q101 certification. The NVMFS3D0P04M8LT1G offers lower on-resistance (2.7 mOhm versus 4.9 mOhm) and higher junction temperature current rating (183A Tc). However, it has a different package configuration (5-DFN with 8-SOFL versus 8-PQFN), higher gate charge (124 nC versus 107 nC), and increased input capacitance (5827 pF versus 4840 pF).

Q: Is the NVMFS3D0P04M8LT1G package compatible with the FDWS9508L-F085 PCB layout?

A: The NVMFS3D0P04M8LT1G uses a 5-DFN (5x6) (8-SOFL) package, while the FDWS9508L-F085 uses an 8-PQFN (5x6) package. Although both are 5x6mm surface mount packages, the lead configurations differ. PCB layout verification is required to confirm mechanical and electrical compatibility before substitution.

Q: Does the NVMFS3D0P04M8LT1G meet automotive qualification requirements?

A: Yes. The NVMFS3D0P04M8LT1G holds automotive-grade classification with AEC-Q101 qualification, matching the FDWS9508L-F085. Both parts are ROHS3 compliant and suitable for automotive applications.

Q: What impact does the higher gate charge of the NVMFS3D0P04M8LT1G have on circuit performance?

A: The NVMFS3D0P04M8LT1G has a gate charge of 124 nC compared to 107 nC for the FDWS9508L-F085. This 17 nC increase may result in slightly longer switching times and increased gate drive power requirements. Applications with high-frequency switching or tight timing constraints should evaluate this parameter against circuit specifications.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. Both the FDWS9508L_F085 and NVMFS3D0P04M8LT1G are ROHS3 compliant, matching the compliance status of the obsolete FDWS9508L-F085.

Q: What is the operating temperature range for all listed parts?

A: All three parts—FDWS9508L-F085, FDWS9508L_F085, and NVMFS3D0P04M8LT1G—operate across the temperature range of -55°C to 175°C (TJ), supporting automotive and industrial applications.

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