FDWS86380-F085 Equivalent & Substitute Parts

Part Overview

The FDWS86380-F085 is an N-Channel 80V 50A power MOSFET manufactured by onsemi, designed for surface mount applications in the PowerTrench® series. This device operates with a maximum drain-to-source voltage of 80V and continuous drain current of 50A at 25°C, delivering 75W maximum power dissipation. The component is classified as Active product status and carries AEC-Q101 automotive qualification with ROHS3 compliance. Substitute parts are identified when equivalent electrical performance and mechanical compatibility can be maintained within specified parameter tolerances for the intended application.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	80	V
Continuous Drain Current (Id) @ 25°C	50	A
Rds On (Max) @ 50A, 10V	13.4	mOhm
Gate Charge (Qg) @ 10V	30	nC
Power Dissipation (Max)	75	W
Operating Temperature Range	-55 to 175	°C
Package Type	8-PowerTDFN	—
Vgs (Max)	±20	V

Substitute Part Grouping Explanation

Substitute parts for the FDWS86380-F085 are identified based on the following electrical and mechanical criteria:

Electrical Compatibility Parameters:

Drain to Source Voltage (Vdss) must equal or exceed 80V
Continuous Drain Current (Id) must equal or exceed 50A at 25°C
On-state resistance (Rds On) must not exceed the maximum specified value at rated conditions
Gate charge characteristics must support equivalent switching performance
Maximum gate-source voltage (Vgs) must accommodate ±20V operation
Operating temperature range must encompass -55°C to 175°C

Mechanical Compatibility Parameters:

Surface mount mounting type required
Package footprint compatibility with 8-PowerTDFN designation
Moisture sensitivity level (MSL) of 1 or better

Compliance Requirements:

ROHS3 compliance mandatory
Active product status required
REACH unaffected status required

The BSZ146N10LS5ATMA1 from Infineon Technologies is listed as a substitute part. This device operates at 100V Vdss and 40A continuous drain current, with electrical characteristics that permit operation within the application envelope of the FDWS86380-F085 when thermal and current requirements do not exceed the substitute's ratings.

Parameter Comparison

Parameter	FDWS86380-F085 (onsemi)	BSZ146N10LS5ATMA1 (Infineon)	Unit
FET Type	N-Channel	N-Channel	—
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	80	100	V
Continuous Drain Current (Id) @ 25°C	50	40	A
Rds On (Max) @ 10V	13.4 @ 50A	14.6 @ 20A	mOhm
Gate Charge (Qg) (Max)	30 @ 10V	3.2 @ 4.5V	nC
Vgs (Max)	±20	±20	V
Input Capacitance (Ciss) (Max)	1440 @ 40V	1300 @ 50V	pF
Power Dissipation (Max)	75	52	W
Operating Temperature Range	-55 to 175	-55 to 150	°C
Mounting Type	Surface Mount	Surface Mount	—
Package / Case	8-PowerTDFN	8-PowerTDFN	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
REACH Status	REACH Unaffected	REACH Unaffected	—
Product Status	Active	Active	—

Engineering Selection Recommendations

FDWS86380-F085 (Primary Selection)

The FDWS86380-F085 remains the primary component for applications requiring the specified 80V/50A performance envelope. This device carries AEC-Q101 automotive qualification and is actively manufactured by onsemi with 871 units in current inventory. The higher continuous drain current rating (50A) and maximum power dissipation (75W) accommodate applications with elevated thermal and current demands. The extended operating temperature range to 175°C supports high-temperature automotive and industrial environments.

BSZ146N10LS5ATMA1 (Substitute Selection)

The BSZ146N10LS5ATMA1 from Infineon Technologies serves as a substitute for applications where the 80V rating is not required and continuous drain current does not exceed 40A. This device features a higher Vdss rating (100V), providing additional voltage margin in systems with transient overvoltage conditions. The lower gate charge (3.2nC at 4.5V) enables faster switching characteristics compared to the primary part. However, the reduced maximum power dissipation (52W) and upper operating temperature limit (150°C) restrict use in high-thermal-load applications. The substitute is actively manufactured by Infineon with 20,443 units in current inventory and maintains ROHS3 and REACH compliance.

Selection Criteria:

Select FDWS86380-F085 when continuous drain current requirements approach or exceed 40A
Select FDWS86380-F085 when operating temperature must reach 175°C
Select FDWS86380-F085 when power dissipation exceeds 52W
Select BSZ146N10LS5ATMA1 when Vdss margin above 80V is beneficial and current remains below 40A
Select BSZ146N10LS5ATMA1 when lower gate charge and faster switching are application priorities

Both devices maintain identical gate-source voltage ratings (±20V), identical package footprints (8-PowerTDFN), and equivalent compliance certifications (ROHS3, REACH Unaffected).

Frequently Asked Questions (FAQ)

Q: Can the BSZ146N10LS5ATMA1 directly replace the FDWS86380-F085 in all applications?

A: No. The BSZ146N10LS5ATMA1 has a lower continuous drain current rating (40A versus 50A) and reduced maximum power dissipation (52W versus 75W). Direct substitution is valid only when the application current remains below 40A and thermal dissipation does not exceed 52W. The upper operating temperature limit of 150°C (versus 175°C) also restricts use in high-temperature environments.

Q: What is the significance of the different Vdss ratings (80V versus 100V)?

A: The FDWS86380-F085 operates at 80V maximum drain-to-source voltage, while the BSZ146N10LS5ATMA1 operates at 100V. The higher rating on the substitute provides additional voltage margin and protection against transient overvoltage events. However, both devices are suitable for applications operating at or below 80V. The higher rating does not improve performance in 80V systems but does increase component cost and may introduce unnecessary design complexity.

Q: Are the package footprints identical between these two devices?

A: Yes. Both the FDWS86380-F085 and BSZ146N10LS5ATMA1 use the 8-PowerTDFN package designation with identical mechanical footprints. PCB layout and thermal management designs developed for one device are directly compatible with the other without modification.

Q: What are the gate charge implications for switching speed?

A: The FDWS86380-F085 has a gate charge of 30nC at 10V, while the BSZ146N10LS5ATMA1 has 3.2nC at 4.5V. Lower gate charge enables faster switching transitions and reduced switching losses. The substitute part's significantly lower gate charge (approximately 10% of the primary part) results in faster turn-on and turn-off times, which may reduce EMI and improve efficiency in high-frequency switching applications.

Q: Do both devices meet automotive qualification requirements?

A: The FDWS86380-F085 carries explicit AEC-Q101 automotive qualification. The BSZ146N10LS5ATMA1 specification data provided does not include AEC-Q101 qualification status. Automotive applications requiring AEC-Q101 certification must use the FDWS86380-F085 unless the substitute's qualification status is independently verified through the manufacturer.

Q: What is the moisture sensitivity level for both devices?

A: Both devices have a moisture sensitivity level (MSL) of 1, indicating unlimited shelf life without moisture control measures. No special storage or handling precautions are required for either component.

Q: Can these devices be used interchangeably in existing designs?

A: Interchangeability depends on application-specific requirements. Designs operating at continuous currents below 40A, power dissipation below 52W, and maximum temperatures below 150°C can use either device. Designs requiring 50A continuous current, 75W dissipation, or 175°C operation must use the FDWS86380-F085. PCB layout modifications are not required due to identical package footprints, but thermal management designs may require adjustment based on the selected device's power rating.

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