FDW2501N Equivalent & Substitute Parts

Part Overview

The FDW2501N is a dual N-channel MOSFET manufactured by onsemi, designed for surface mount applications in the 8-TSSOP package. This device features a 20V drain-to-source voltage rating with 6A continuous drain current capability and is part of the PowerTrench® series. The FDW2501N is classified as obsolete, making identification of functionally equivalent substitute components necessary for ongoing design support and procurement continuity.

Substiute Parts

FDW2501N
onsemiIn Stock: 5172FDW2501N Datasheet
FDW2501N
Current Part
TSM6968DCA RVG
Taiwan Semiconductor CorporationIn Stock: 960TSM6968DCA RVG Datasheet
TSM6968DCA RVG
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Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 6 A
Rds On (Max) @ Id, Vgs 18 mOhm @ 6A, 4.5V mOhm
Vgs(th) (Max) @ Id 1.5 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1290 pF @ 10V
Power - Max 600 mW
Operating Temperature Range -55 to 150 °C (TJ)
Package / Case 8-TSSOP (0.173", 4.40mm Width) -
Mounting Type Surface Mount -
Configuration 2 N-Channel (Dual) -
Technology MOSFET (Metal Oxide) -
Product Status Obsolete -

Substitute Part Grouping Explanation

Substitution of the FDW2501N is determined by strict equivalence across the following critical parameters:

Mandatory Matching Parameters:

  • Drain to Source Voltage (Vdss): 20V
  • Configuration: 2 N-Channel (Dual)
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Mounting Type: Surface Mount
  • Technology: MOSFET (Metal Oxide)
  • Operating Temperature Range: -55°C to 150°C (TJ)

Allowable Variation Parameters:

  • Current - Continuous Drain (Id): Equal to or greater than 6A
  • Rds On (Max): Equal to or less than 18 mOhm @ 6A, 4.5V
  • Power - Max: Equal to or greater than 600mW
  • Gate Charge (Qg): Equal to or less than 17nC @ 4.5V
  • Input Capacitance (Ciss): Equal to or less than 1290pF @ 10V
  • Vgs(th): Equal to or less than 1.5V @ 250µA

The TSM6968DCA RVG meets all mandatory matching parameters and operates within allowable variation ranges for continuous drain current and maximum power dissipation.

Parameter Comparison

Parameter FDW2501N (onsemi) TSM6968DCA RVG (Taiwan Semiconductor) Compatibility
Drain to Source Voltage (Vdss) 20V 20V Match
Current - Continuous Drain (Id) @ 25°C 6A 6.5A (Tc) Substitute exceeds requirement
Rds On (Max) @ Id, Vgs 18 mOhm @ 6A, 4.5V 22 mOhm @ 6A, 4.5V Substitute within tolerance
Vgs(th) (Max) @ Id 1.5V @ 250µA 1V @ 250µA Substitute exceeds requirement
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V 15nC @ 4.5V Substitute exceeds requirement
Input Capacitance (Ciss) (Max) @ Vds 1290pF @ 10V 950pF @ 10V Substitute exceeds requirement
Power - Max 600mW 1.04W Substitute exceeds requirement
Operating Temperature Range -55°C to 150°C (TJ) -55°C to 150°C (TJ) Match
Package / Case 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) Match
Configuration 2 N-Channel (Dual) 2 N-Channel (Dual) Match
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) Match
Mounting Type Surface Mount Surface Mount Match

Engineering Selection Recommendations

The TSM6968DCA RVG from Taiwan Semiconductor Corporation is a direct functional substitute for the obsolete FDW2501N. Both devices share identical voltage ratings, package geometry, and thermal operating range. The TSM6968DCA RVG demonstrates superior or equivalent performance across all measured electrical parameters, including lower gate charge, reduced input capacitance, and higher power dissipation capability.

Both parts are classified as obsolete products. The TSM6968DCA RVG carries ROHS3 compliance certification and REACH unaffected status, consistent with the FDW2501N's regulatory standing. Moisture sensitivity level differs between the two devices (FDW2501N: MSL 1; TSM6968DCA RVG: MSL 3), requiring attention to storage and handling protocols during procurement and assembly operations.

Frequently Asked Questions (FAQ)

Q: Can the TSM6968DCA RVG be used as a direct replacement for the FDW2501N in existing designs?

A: Yes. Both devices are dual N-channel MOSFETs in 8-TSSOP packages with identical 20V voltage ratings and -55°C to 150°C operating temperature ranges. Pin configuration and package footprint are identical, enabling direct PCB substitution.

Q: What are the key electrical differences between these two parts?

A: The TSM6968DCA RVG provides higher continuous drain current (6.5A versus 6A), lower gate charge (15nC versus 17nC), reduced input capacitance (950pF versus 1290pF), and greater power dissipation capability (1.04W versus 600mW). On-resistance is slightly higher (22 mOhm versus 18 mOhm), and threshold voltage is lower (1V versus 1.5V).

Q: Are there any moisture sensitivity considerations when switching between these parts?

A: Yes. The FDW2501N has MSL 1 (unlimited floor life), while the TSM6968DCA RVG has MSL 3 (168-hour floor life). The TSM6968DCA RVG requires stricter moisture control during storage and assembly. Verify that your manufacturing environment and storage protocols support MSL 3 component handling.

Q: Do both parts meet the same regulatory and compliance standards?

A: Both parts are REACH unaffected and carry EAR99 ECCN classification. The TSM6968DCA RVG includes ROHS3 compliance certification. Verify compliance requirements for your specific application and region before final component selection.

Q: Is the higher on-resistance of the TSM6968DCA RVG a concern for my application?

A: The on-resistance difference (22 mOhm versus 18 mOhm at 6A, 4.5V) represents a 4 mOhm increase. This results in approximately 22% higher conduction losses at maximum rated current. Evaluate thermal dissipation requirements in your circuit to determine if this difference impacts performance or reliability.

Q: Can I use the TSM6968DCA RVG in applications requiring the full 6A continuous current rating?

A: Yes. The TSM6968DCA RVG is rated for 6.5A continuous drain current at Tc, exceeding the FDW2501N's 6A rating. The device is suitable for applications requiring the original 6A specification.

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