FDV045P20L P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FDV045P20L is a P-Channel MOSFET manufactured by onsemi, rated for 20V drain-to-source voltage with 1.15A continuous drain current at 25°C. The device is housed in a SOT-23-3 surface mount package and is designed for low-power switching applications. The FDV045P20L is classified as obsolete, making identification of suitable substitute components necessary for ongoing design support and production continuity. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, and thermal characteristics while accommodating the same or compatible package footprints.

Key Parameters

Parameter	FDV045P20L	Unit
Drain-to-Source Voltage (Vdss)	20	V
Continuous Drain Current (Id) @ 25°C	1.15	A
On-Resistance (Rds On) @ Id, Vgs	108 mOhm @ 1.15A, 4.5V	mOhm
Gate Threshold Voltage (Vgs(th)) @ Id	1.5	V @ 250µA
Gate Charge (Qg) @ Vgs	10	nC @ 4.5V
Maximum Gate Voltage (Vgs)	±8	V
Input Capacitance (Ciss) @ Vds	1220	pF @ 10V
Power Dissipation (Max)	1.6	W (Ta)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	SOT-23-3	TO-236-3
Product Status	Obsolete	—
RoHS Compliance	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the FDV045P20L are selected based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Mandatory Matching Criteria:

Drain-to-Source Voltage (Vdss): 20V (exact match required)
FET Type: P-Channel (exact match required)
Package Type: SOT-23-3 / TO-236-3 (mechanical compatibility)
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount

Allowable Parameter Ranges for Substitution:

Continuous Drain Current (Id): Equal to or greater than 1.15A
On-Resistance (Rds On): Equal to or less than 108 mOhm (lower is acceptable)
Gate Threshold Voltage (Vgs(th)): Within ±0.5V of 1.5V
Maximum Gate Voltage (Vgs): ±8V or greater
Operating Temperature Range: Must include -55°C to 150°C minimum
Power Dissipation: Equal to or greater than 1.6W

Substitute parts meeting these criteria can be directly replaced in the FDV045P20L application without circuit redesign, provided the application does not depend on the specific obsolete part's unique characteristics.

Parameter Comparison

Parameter	FDV045P20L	DMG2301L-7	NX2301P,215	NX2301PVL	PMV100XPEAR	PMV65XPER	PMV75UP,215	SI2301BDS-T1-GE3	SI2301CDS-T1-GE3	SI2321-TP	SQ2351ES-T1_GE3	Unit
Manufacturer	onsemi	Diodes Inc.	NXP Semi.	Nexperia USA	Nexperia USA	Nexperia USA	Nexperia USA	Vishay Siliconix	Vishay Siliconix	Micro Commercial	Vishay Siliconix	—
Vdss	20	20	20	20	20	20	20	20	20	20	20	V
Id @ 25°C	1.15	3	2	2	2.4	2.8	2.5	2.2	3.1	2.9	3.2	A
Rds On (Max) @ Vgs	108 @ 4.5V	120 @ 4.5V	120 @ 4.5V	120 @ 4.5V	128 @ 4.5V	78 @ 4.5V	102 @ 4.5V	100 @ 4.5V	112 @ 4.5V	110 @ 10V	115 @ 4.5V	mOhm
Vgs(th) @ 250µA	1.5	1.2	1.1	1.1	1.25	1.25	0.9	0.95	1	0.9	1.5	V
Qg @ 4.5V	10	5.5	6	6	6	9	7.5	10	10	13	5.5	nC
Vgs (Max)	±8	±8	±8	±8	±12	±12	±12	±8	±8	±12	±12	V
Ciss @ Vds	1220 @ 10V	476 @ 10V	380 @ 6V	380 @ 6V	386 @ 10V	618 @ 10V	550 @ 10V	375 @ 6V	405 @ 10V	715 @ 6V	330 @ 10V	pF
Power Dissipation (Max)	1.6 (Ta)	1.5 (Ta)	0.4 (Ta)	0.4 (Ta)	0.463 (Ta)	0.48 (Ta)	0.49 (Ta)	0.7 (Ta)	0.86 (Ta)	0.35 (Ta)	2 (Tc)	W
Operating Temp Range	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 175	°C (TJ)
Package	SOT-23-3	SOT-23-3	TO-236AB	TO-236AB	TO-236AB	TO-236AB	TO-236AB	SOT-23-3	SOT-23-3	SOT-23	SOT-23-3	—
Product Status	Obsolete	Active	Active	Not For New Designs	Active	Active	Active	Active	Active	Active	Obsolete	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

Primary Substitutes (Active Status, Full Compliance):

The following parts are recommended as direct substitutes for the FDV045P20L based on active product status, ROHS3 compliance, and electrical parameter compatibility:

DMG2301L-7 (Diodes Incorporated): Active status with 3A continuous drain current, 120 mOhm on-resistance, and SOT-23-3 package. Exceeds current rating and maintains thermal performance. ROHS3 compliant with unlimited moisture sensitivity level.

SI2301BDS-T1-GE3 (Vishay Siliconix): Active TrenchFET® series device with 2.2A continuous drain current and 100 mOhm on-resistance. SOT-23-3 package with ROHS3 compliance. Gate charge of 10 nC matches the original specification.

SI2301CDS-T1-GE3 (Vishay Siliconix): Active TrenchFET® series with 3.1A continuous drain current and 112 mOhm on-resistance. SOT-23-3 package, ROHS3 compliant. Provides higher current capacity with comparable on-resistance.

PMV75UP,215 (Nexperia USA Inc.): Active status with 2.5A continuous drain current and 102 mOhm on-resistance. TO-236AB package (mechanically compatible with SOT-23-3). ROHS3 compliant with ±12V gate voltage rating.

PMV65XPER (Nexperia USA Inc.): Active status with 2.8A continuous drain current and 78 mOhm on-resistance (superior to original). TO-236AB package, ROHS3 compliant. Provides lower on-resistance for improved efficiency.

Secondary Substitutes (Active Status, Package or Compliance Considerations):

NX2301P,215 (NXP Semiconductors): Active status with 2A continuous drain current and 120 mOhm on-resistance. RoHS non-compliant; suitable only for applications without RoHS requirements. TO-236AB package.

PMV100XPEAR (Nexperia USA Inc.): Active status with 2.4A continuous drain current and 128 mOhm on-resistance. TO-236AB package, ROHS3 compliant. AEC-Q100 automotive qualification available.

SI2321-TP (Micro Commercial Co): Active status with 2.9A continuous drain current and 110 mOhm on-resistance. SOT-23 package, ROHS3 compliant. Higher gate charge (13 nC) compared to original.

Not Recommended for New Designs:

NX2301PVL (Nexperia USA Inc.): Marked "Not For New Designs" despite active electrical performance. Suitable only for legacy system support.

SQ2351ES-T1_GE3 (Vishay Siliconix): Obsolete status. Suitable only for direct replacement in existing production where no alternative is available.

Frequently Asked Questions (FAQ)

Q: Can I use a substitute part with higher continuous drain current than the FDV045P20L?

A: Yes. A substitute with equal or greater continuous drain current (Id) is acceptable. Higher current rating indicates the device can handle the same or greater load without exceeding thermal limits. The FDV045P20L operates at 1.15A; substitutes rated at 2A, 2.5A, 3A, or higher are electrically compatible.

Q: What is the significance of on-resistance (Rds On) in selecting a substitute?

A: On-resistance determines power dissipation and heat generation during operation. The FDV045P20L specifies 108 mOhm at 4.5V gate voltage. Substitutes with equal or lower on-resistance are acceptable; lower values reduce power loss and improve efficiency. For example, PMV65XPER at 78 mOhm provides superior performance.

Q: Are TO-236AB and SOT-23-3 packages interchangeable?

A: Yes. Both TO-236AB and SOT-23-3 are equivalent package designations for the same physical form factor (three-terminal surface mount package). Devices in either package can be substituted without PCB redesign.

Q: Why is gate threshold voltage (Vgs(th)) important for substitution?

A: Gate threshold voltage determines the minimum gate-source voltage required to turn the MOSFET on. The FDV045P20L specifies 1.5V at 250µA. Substitutes with Vgs(th) between approximately 0.9V and 1.5V are acceptable, as they will respond to the same gate drive signals. Significant deviations may require circuit adjustment.

Q: What does "ROHS3 Compliant" mean for component selection?

A: ROHS3 (Restriction of Hazardous Substances Directive 3) compliance indicates the device contains no lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls, or polybrominated diphenyl ethers. For applications subject to environmental regulations or customer requirements, ROHS3-compliant substitutes are mandatory. NX2301P,215 is RoHS non-compliant and unsuitable for regulated applications.

Q: Can I substitute the FDV045P20L with a device rated for higher gate voltage (Vgs)?

A: Yes. The FDV045P20L allows ±8V gate voltage. Substitutes rated for ±12V gate voltage (such as PMV75UP,215 or PMV65XPER) are fully compatible and provide additional design margin. The higher rating does not affect operation at ±8V or lower.

Q: What is the impact of gate charge (Qg) on circuit performance?

A: Gate charge affects switching speed and gate drive requirements. The FDV045P20L specifies 10 nC at 4.5V. Substitutes with lower gate charge (5.5 nC to 9 nC) switch faster; those with higher gate charge (13 nC) switch slower. For most applications, variations within ±50% are acceptable without circuit modification.

Q: Why are some substitutes marked "Obsolete" or "Not For New Designs"?

A: Obsolete parts are no longer manufactured and inventory is limited. "Not For New Designs" indicates the manufacturer recommends against using the part in new applications, though existing stock may be available. For new designs, select only Active status parts such as DMG2301L-7, SI2301BDS-T1-GE3, or PMV75UP,215.

Q: How does input capacitance (Ciss) affect substitute selection?

A: Input capacitance affects gate drive circuit design and switching transients. The FDV045P20L specifies 1220 pF at 10V. Substitutes with lower capacitance (330 pF to 715 pF) require less gate charge and switch faster. Higher capacitance requires stronger gate drive but does not prevent substitution in most applications.

Q: Is automotive qualification (AEC-Q101 or AEC-Q100) required for all applications?

A: Automotive qualification is required only for automotive applications subject to AEC standards. PMV100XPEAR carries AEC-Q100 qualification; SQ2351ES-T1_GE3 carries AEC-Q101 qualification. For non-automotive applications, qualification is not necessary.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message