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FDU8880 Equivalent & Substitute Parts
Part Overview
The FDU8880 is an N-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with continuous drain current of 13A (Ta) and 58A (Tc). This device is housed in a Through Hole I-PAK (TO-251-3) package and is part of the PowerTrench® series. The FDU8880 is classified as obsolete, making identification of equivalent substitute parts essential for ongoing design support and component procurement. Substitute parts must maintain electrical equivalence across critical parameters including voltage rating, current capacity, on-resistance, and thermal characteristics while accommodating different mounting technologies.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| FET Type | N-Channel | — |
| Drain to Source Voltage (Vdss) | 30 | V |
| Continuous Drain Current @ 25°C (Ta) | 13 | A |
| Continuous Drain Current @ 25°C (Tc) | 58 | A |
| Power Dissipation (Max) | 55 | W |
| Rds On (Max) @ 35A, 10V | 10 | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 2.5 | V |
| Gate Charge (Qg) @ 10V | 31 | nC |
| Input Capacitance (Ciss) @ 15V | 1260 | pF |
| Operating Temperature Range | -55 to 175 | °C |
| Mounting Type | Through Hole | — |
| Package | TO-251-3 (I-PAK) | — |
Substitute Part Grouping Explanation
Substitution of the FDU8880 is determined by electrical parameter equivalence across the following critical specifications:
Electrical Equivalence Criteria:
- Drain-to-Source Voltage (Vdss): Must equal 30V
- Continuous Drain Current: Must support 13A (Ta) and 58A (Tc) minimum
- Power Dissipation: Must support 55W (Tc) minimum
- On-Resistance (Rds On): Must not exceed 10mOhm @ 35A, 10V
- Gate Threshold Voltage: Must equal 2.5V @ 250µA
- Gate Charge: Must equal 31nC @ 10V
- Input Capacitance: Must equal 1260pF @ 15V
- Operating Temperature Range: Must support -55°C to 175°C
Mechanical Compatibility: Substitutes may differ in mounting technology (Through Hole versus Surface Mount) and package designation (TO-251-3 versus TO-252-3) provided all electrical parameters remain equivalent. Package differences do not affect electrical substitution validity but require circuit board redesign considerations.
Parameter Comparison
| Parameter | FDU8880 (Main Part) | FDD8880 (Substitute) | Match Status |
|---|---|---|---|
| Manufacturer | onsemi | onsemi | Identical |
| FET Type | N-Channel | N-Channel | Identical |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | Identical |
| Drain to Source Voltage (Vdss) | 30V | 30V | Identical |
| Continuous Drain Current (Ta) | 13A | 13A | Identical |
| Continuous Drain Current (Tc) | 58A | 58A | Identical |
| Power Dissipation (Max) | 55W | 55W | Identical |
| Rds On (Max) @ 35A, 10V | 10mOhm | 9mOhm | Equivalent (FDD8880 superior) |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 2.5V | 2.5V | Identical |
| Gate Charge (Qg) @ 10V | 31nC | 31nC | Identical |
| Vgs (Max) | ±20V | ±20V | Identical |
| Input Capacitance (Ciss) @ 15V | 1260pF | 1260pF | Identical |
| Operating Temperature Range | -55°C to 175°C | -55°C to 175°C | Identical |
| Series | PowerTrench® | PowerTrench® | Identical |
| Mounting Type | Through Hole | Surface Mount | Different |
| Package / Case | TO-251-3 (I-PAK) | TO-252-3 (DPAK) | Different |
| Product Status | Obsolete | Active | FDD8880 actively supported |
| RoHS Status | Not specified | ROHS3 Compliant | FDD8880 compliant |
Engineering Selection Recommendations
FDD8880 as Primary Substitute:
The FDD8880 is the direct electrical equivalent of the FDU8880 and is the recommended substitute for all applications. Both devices are manufactured by onsemi within the PowerTrench® series and share identical electrical specifications across all critical parameters. The FDD8880 offers the following advantages:
- Active Product Status: The FDD8880 is actively manufactured and supported by onsemi, ensuring long-term availability and supply chain stability compared to the obsolete FDU8880.
- Improved On-Resistance: The FDD8880 exhibits 9mOhm on-resistance versus 10mOhm for the FDU8880, providing superior thermal performance and reduced power dissipation in equivalent operating conditions.
- Regulatory Compliance: The FDD8880 is ROHS3 compliant, meeting current environmental and regulatory requirements for electronic components.
- Electrical Equivalence: All voltage ratings, current ratings, gate characteristics, and thermal specifications are identical, ensuring drop-in electrical compatibility.
Packaging Consideration:
The primary difference between FDU8880 and FDD8880 is the mounting technology and package form factor. The FDU8880 uses Through Hole I-PAK (TO-251-3) mounting, while the FDD8880 uses Surface Mount TO-252-3 (DPAK) packaging. This difference requires circuit board redesign and assembly process modification but does not affect electrical performance or functional compatibility. Selection between these packages depends on manufacturing capability and board layout requirements rather than electrical criteria.
Frequently Asked Questions (FAQ)
Q: Can the FDD8880 directly replace the FDU8880 in existing designs?
A: The FDD8880 is electrically equivalent to the FDU8880 across all critical parameters. However, the FDD8880 uses Surface Mount packaging (TO-252-3) while the FDU8880 uses Through Hole packaging (TO-251-3). Direct board-level replacement requires circuit board redesign to accommodate the different package footprint. Electrical functionality remains identical.
Q: What is the significance of the on-resistance difference between FDU8880 (10mOhm) and FDD8880 (9mOhm)?
A: The FDD8880 exhibits lower on-resistance (9mOhm versus 10mOhm) at identical operating conditions (35A, 10V gate voltage). This 1mOhm reduction results in lower power dissipation and improved thermal performance. Both values remain within acceptable operating parameters for equivalent circuit operation.
Q: Why is the FDU8880 classified as obsolete?
A: The FDU8880 is an older Through Hole package variant. onsemi has transitioned to the FDD8880 Surface Mount variant as the active product line. The FDD8880 provides equivalent electrical performance with improved manufacturing efficiency and regulatory compliance.
Q: Are there any compliance or certification differences between FDU8880 and FDD8880?
A: The FDD8880 is ROHS3 compliant. Both devices are REACH unaffected and carry EAR99 ECCN classification. The FDD8880 represents the current compliant product offering for this electrical specification.
Q: What parameters must remain identical for substitution validity?
A: Substitution validity requires identical Vdss (30V), continuous drain current (13A Ta / 58A Tc), power dissipation (55W), gate threshold voltage (2.5V @ 250µA), gate charge (31nC @ 10V), and input capacitance (1260pF @ 15V). On-resistance may be equal or lower in the substitute part. All other electrical and thermal specifications must match or exceed the original device.
Q: Can the FDD8880 be used in high-temperature applications?
A: Both FDU8880 and FDD8880 support identical operating temperature ranges from -55°C to 175°C (TJ). Temperature capability is equivalent between the two devices.
Q: What is the moisture sensitivity level for these devices?
A: Both FDU8880 and FDD8880 carry MSL 1 (Unlimited) classification, indicating no moisture sensitivity restrictions during storage or handling.
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