FDS9933BZ Equivalent & Substitute Parts

Part Overview

The FDS9933BZ is a dual P-channel MOSFET array manufactured by onsemi, designed for surface mount applications in the 8-SOIC package. This device features a 20V drain-to-source voltage rating with a continuous drain current of 4.9A and operates across a temperature range of -55°C to 150°C. The FDS9933BZ is classified as obsolete, necessitating identification of equivalent substitute components for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while supporting the same package footprint and mounting methodology.

Substiute Parts

FDS9933BZ

onsemiIn Stock: 8709FDS9933BZ Datasheet

Current PartRFQ

FDS6875

onsemiIn Stock: 80191FDS6875 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the FDS9933BZ is determined by strict electrical and mechanical compatibility across the following parameters:

Voltage Rating Compatibility: The substitute part must maintain a drain-to-source voltage (Vdss) rating of 20V or greater to ensure safe operation within the original circuit design envelope.

Current Capacity: The substitute part must support a continuous drain current (Id) rating equal to or exceeding 4.9A at 25°C to handle the specified load conditions.

On-State Resistance: The substitute part's Rds On specification must not exceed the original 46 mOhm value at the rated current and gate voltage to prevent excessive power dissipation and thermal stress.

Gate Threshold Voltage: The substitute part must maintain a Vgs(th) rating of 1.5V or lower at 250µA to ensure proper logic-level gate drive compatibility.

Thermal Operating Range: The substitute part must support the full operating temperature range of -55°C to 150°C (junction temperature).

Package and Mounting: The substitute part must be housed in an 8-SOIC surface mount package with identical footprint dimensions (0.154", 3.90mm width) to ensure direct PCB compatibility.

Configuration: The substitute part must maintain a dual P-channel (2 P-Channel) configuration to preserve circuit functionality.

Parameter Comparison

Engineering Selection Recommendations

The FDS6875 is a direct substitute for the FDS9933BZ based on electrical and mechanical compatibility. Both devices share identical voltage ratings (20V Vdss), thermal operating ranges (-55°C to 150°C), package specifications (8-SOIC), and configuration (dual P-channel with logic level gate drive).

The FDS6875 provides enhanced performance characteristics relative to the FDS9933BZ. The substitute part delivers a higher continuous drain current rating (6A versus 4.9A) and superior on-state resistance (30 mOhm versus 46 mOhm), resulting in reduced power dissipation and improved thermal efficiency in equivalent circuit applications.

The FDS9933BZ is classified as obsolete, while the FDS6875 maintains active product status with full manufacturing support and availability. The FDS6875 is RoHS3 compliant and carries REACH unaffected designation, meeting current regulatory requirements for electronic component procurement.

Gate charge and input capacitance values are higher in the FDS6875 (31 nC and 2250 pF respectively, compared to 15 nC and 985 pF). These parameters affect switching speed and gate drive requirements. Circuit designs must accommodate these increased capacitive loads during gate drive signal conditioning to maintain switching performance.

Frequently Asked Questions (FAQ)

Q: Can the FDS6875 be used as a direct replacement for the FDS9933BZ in existing circuit designs?

A: Yes. The FDS6875 is electrically and mechanically compatible with the FDS9933BZ. Both devices share identical voltage ratings, thermal ranges, package footprints, and dual P-channel configuration. The substitute part can be soldered into existing PCB layouts without modification.

Q: What are the key differences between the FDS9933BZ and FDS6875?

A: The FDS6875 provides higher continuous drain current (6A versus 4.9A) and lower on-state resistance (30 mOhm versus 46 mOhm). Gate charge and input capacitance are higher in the FDS6875. The FDS9933BZ is obsolete; the FDS6875 is in active production.

Q: Will the higher gate charge of the FDS6875 affect circuit performance?

A: Gate charge affects switching speed and gate drive power requirements. The FDS6875 requires approximately twice the gate charge (31 nC versus 15 nC). Gate drive circuits must supply sufficient current to charge the gate capacitance within the required switching time window. Existing gate drive designs should be evaluated for adequacy.

Q: Are there any thermal or power dissipation advantages to using the FDS6875?

A: Yes. The FDS6875 exhibits lower on-state resistance (30 mOhm versus 46 mOhm), resulting in reduced conduction losses and lower junction temperatures at equivalent current levels. Both devices share the same maximum power dissipation rating (900 mW), but the FDS6875 achieves this with improved efficiency.

Q: Is the FDS6875 available in the same packaging as the FDS9933BZ?

A: Yes. Both devices are housed in 8-SOIC surface mount packages with identical footprint dimensions (0.154", 3.90mm width). PCB layout and assembly processes require no modification.

Q: What is the product status difference between these two parts?

A: The FDS9933BZ is classified as obsolete and no longer manufactured. The FDS6875 is in active production with full manufacturing support, technical documentation, and supply chain availability.

Q: Does the FDS6875 meet current regulatory compliance standards?

A: Yes. The FDS6875 is RoHS3 compliant and carries REACH unaffected designation. The FDS9933BZ regulatory status is not specified in the provided data.

Q: Can I use the FDS6875 in applications requiring the exact specifications of the FDS9933BZ?

A: The FDS6875 meets or exceeds all critical electrical specifications of the FDS9933BZ (voltage, current, temperature range, package). The higher gate charge and input capacitance require gate drive circuit evaluation but do not prevent substitution in applications where the original part specifications are met.