FDS9412 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FDS9412 is an N-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with 7.9A continuous drain current at 25°C. The device is housed in an 8-SOIC surface mount package and is designed for general-purpose switching and amplification applications. The FDS9412 carries an obsolete product status, making identification of functionally equivalent alternatives necessary for ongoing design support, production continuity, and component sourcing.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	7.9	A
On-State Resistance (Rds On) @ 7.9A, 10V	22	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2	V
Gate Charge (Qg) @ 10V	22	nC
Power Dissipation (Max)	2.5	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-SOIC	—
FET Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the FDS9412 is determined by strict electrical and mechanical compatibility across the following parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
Continuous Drain Current (Id): Must meet or exceed 7.9A at 25°C
On-State Resistance (Rds On): Must not exceed 22mOhm at rated current and gate voltage
Gate Threshold Voltage (Vgs(th)): Must fall within ±20V maximum gate voltage specification
Package Type: Must be 8-SOIC or mechanically compatible surface mount equivalent
Operating Temperature Range: Must span -55°C to 150°C minimum
FET Type: Must be N-Channel MOSFET technology

Secondary Compatibility Factors:

Gate Charge (Qg) and Input Capacitance (Ciss) affect switching speed and drive circuit requirements
Power Dissipation capability influences thermal management
Product status and compliance certifications determine suitability for new designs versus legacy support

The substitute parts listed below satisfy the primary electrical criteria while maintaining package compatibility. Variations in secondary parameters reflect design improvements or different manufacturing processes within the same functional class.

Parameter Comparison

Parameter	FDS9412	FDS8884	NTMS7N03R2G	DMG4496SSSQ-13	STS10N3LH5	Unit
Manufacturer	onsemi	onsemi	onsemi	Diodes Inc.	STMicroelectronics	—
Vdss (Drain-Source Voltage)	30	30	30	30	30	V
Id @ 25°C (Continuous Drain Current)	7.9	8.5	4.8	10	10	A
Rds On (Max) @ Vgs 10V	22 @ 7.9A	23 @ 8.5A	23 @ 7A	21.5 @ 10A	21 @ 5A	mOhm
Vgs(th) @ 250µA	2	2.5	3	2	1	V
Qg @ 10V (Gate Charge)	22	13	43	10.2	4.6	nC
Ciss @ Vds (Input Capacitance)	830 @ 15V	635 @ 15V	1190 @ 25V	493.5 @ 15V	475 @ 25V	pF
Power Dissipation (Max)	2.5	2.5	0.8	1.42	2.5	W
Operating Temperature	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	°C
Package	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	—
Product Status	Obsolete	Active	Active	Active	Not For New Designs	—
RoHS Compliance	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

FDS8884 (onsemi)

The FDS8884 is the primary substitute for the FDS9412. Both devices are manufactured by onsemi and share identical voltage and power dissipation ratings. The FDS8884 provides 8.5A continuous drain current, exceeding the FDS9412 specification of 7.9A. On-state resistance is comparable at 23mOhm versus 22mOhm. The FDS8884 carries active product status and ROHS3 compliance, making it suitable for new designs and production continuity. Gate charge is reduced to 13nC, improving switching efficiency. This device is recommended as the primary replacement for direct substitution.

DMG4496SSSQ-13 (Diodes Incorporated)

The DMG4496SSSQ-13 exceeds FDS9412 specifications with 10A continuous drain current and superior on-state resistance of 21.5mOhm. The device is AEC-Q101 qualified and automotive-grade, providing enhanced reliability for demanding applications. Power dissipation is lower at 1.42W, and gate charge is minimized at 10.2nC. Input capacitance is reduced to 493.5pF, enabling faster switching. This device is active and ROHS3 compliant. Selection is appropriate for applications requiring automotive qualification or enhanced performance margins.

STS10N3LH5 (STMicroelectronics)

The STS10N3LH5 provides 10A continuous drain current with 21mOhm on-state resistance, both superior to FDS9412 specifications. The device features the lowest gate charge at 4.6nC and minimal input capacitance at 475pF, enabling high-speed switching applications. However, the product carries "Not For New Designs" status, limiting its use to legacy system support and existing production lines. ROHS3 compliance is confirmed. This device is suitable only when design continuity with existing systems is required.

NTMS7N03R2G (onsemi)

The NTMS7N03R2G is not recommended as a primary substitute. Although manufactured by onsemi and sharing the 30V voltage rating, continuous drain current is limited to 4.8A, falling below the FDS9412 requirement of 7.9A. Power dissipation is reduced to 800mW, and gate charge is elevated to 43nC. This device is suitable only for applications with reduced current requirements or as a secondary option when primary substitutes are unavailable.

Frequently Asked Questions (FAQ)

Q: Can the FDS8884 directly replace the FDS9412 in existing designs?

A: Yes. The FDS8884 maintains identical voltage rating (30V), exceeds current capability (8.5A vs. 7.9A), and provides comparable on-state resistance (23mOhm vs. 22mOhm). Both devices use 8-SOIC packaging with identical pinout. The FDS8884 is active and ROHS3 compliant, making it the recommended direct replacement.

Q: What is the primary reason for substituting the FDS9412?

A: The FDS9412 carries obsolete product status. Substitution is necessary to ensure component availability, maintain production continuity, and comply with current manufacturing and environmental standards. Active alternatives provide equivalent or superior electrical performance.

Q: Are all substitute parts pin-compatible with the FDS9412?

A: Yes. All substitute parts listed use the 8-SOIC package with identical 0.154" (3.90mm) width. Pin assignments for N-Channel MOSFETs in this package class are standardized. Physical and electrical compatibility is confirmed across all listed alternatives.

Q: How does gate charge affect device selection?

A: Gate charge (Qg) determines the energy required to switch the device on and off. Lower gate charge reduces switching losses and allows faster switching speeds. The FDS8884 (13nC) and DMG4496SSSQ-13 (10.2nC) provide improved switching efficiency compared to the FDS9412 (22nC). Selection depends on circuit switching frequency and driver capability.

Q: Is the DMG4496SSSQ-13 suitable for automotive applications?

A: Yes. The DMG4496SSSQ-13 is AEC-Q101 qualified and automotive-grade. This qualification indicates compliance with automotive reliability and environmental standards. Selection is appropriate for automotive and mission-critical applications requiring enhanced qualification documentation.

Q: Why is the STS10N3LH5 marked "Not For New Designs"?

A: The "Not For New Designs" status indicates that STMicroelectronics has designated this device for legacy support only. While electrically functional and ROHS3 compliant, the manufacturer recommends alternative devices for new product development. Use is limited to existing production lines and design continuity scenarios.

Q: What is the difference between Rds On specifications at different current levels?

A: On-state resistance varies with drain current and gate voltage. The FDS9412 specifies 22mOhm at 7.9A and 10V gate voltage. Substitute parts may specify Rds On at different current levels (e.g., DMG4496SSSQ-13 at 10A, STS10N3LH5 at 5A). Comparison requires normalizing to the same operating point or using datasheet curves for accurate thermal and loss calculations.

Q: Can NTMS7N03R2G be used in high-current applications?

A: No. The NTMS7N03R2G is limited to 4.8A continuous drain current, significantly below the FDS9412 specification of 7.9A. Use is restricted to low-current applications or as a secondary option only when primary substitutes are unavailable and circuit current requirements are reduced.

Q: What compliance certifications are important for component selection?

A: ROHS3 compliance is standard across active substitute parts, ensuring compliance with European environmental directives. AEC-Q101 qualification (DMG4496SSSQ-13) indicates automotive-grade reliability. REACH compliance is confirmed for all listed devices. Selection should prioritize active products with current compliance certifications for new designs.

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