FDS8962C Equivalent & Substitute Parts

Part Overview

The FDS8962C is an N and P-Channel MOSFET array manufactured by onsemi, rated for 30V drain-to-source voltage with continuous drain currents of 7A (N-channel) and 5A (P-channel). This device is housed in an 8-SOIC surface mount package and features logic level gate operation with a maximum power dissipation of 900mW. The FDS8962C is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and production continuity.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	7A / 5A	A
Rds On (Max) @ Id, Vgs	30mOhm @ 7A, 10V	mOhm
Vgs(th) (Max) @ Id	3V @ 250µA	V
Gate Charge (Qg) (Max) @ Vgs	26nC @ 10V	nC
Input Capacitance (Ciss) (Max) @ Vds	575pF @ 15V	pF
Power - Max	900	mW
Operating Temperature Range	-55 to 150	°C
Package / Case	8-SOIC (0.154", 3.90mm Width)	—
Configuration	N and P-Channel	—
FET Feature	Logic Level Gate	—

Substitute Part Grouping Explanation

Substitution of the FDS8962C is determined by the following critical parameters:

Electrical Compatibility Requirements:

Drain to Source Voltage (Vdss) must equal or exceed 30V
Continuous drain current ratings must meet or exceed 7A (N-channel) and 5A (P-channel) at 25°C
Configuration must be N and P-Channel in a single package
Logic level gate operation must be maintained
Operating temperature range must span -55°C to 150°C

Mechanical Compatibility Requirements:

Package type must be 8-SOIC or equivalent 8-pin surface mount configuration
Physical dimensions must be compatible with 0.154" (3.90mm) width specification

Substitute Classification:

Direct Substitutes maintain electrical and mechanical specifications within acceptable tolerance ranges and can be used as pin-for-pin replacements without circuit modification.

Similar Substitutes meet the core voltage and current requirements but may exhibit variations in secondary parameters such as gate charge, input capacitance, or on-resistance. These parts are functionally compatible but require verification of application-specific performance characteristics.

Parameter Comparison

Parameter	FDS8962C (Main)	FDS8958A	DMC3028LSD-13	DMC3032LSD-13	IRF9389TRPBF	SP8M10FRATB
Manufacturer	onsemi	onsemi	Diodes Inc.	Diodes Inc.	Infineon	Rohm Semi.
Vdss (V)	30	30	30	30	30	30
Id @ 25°C (A)	7 / 5	7 / 5	6.6 / 6.8	8.1 / 7	6.8 / 4.6	7 / 4.5
Rds On (mOhm)	30 @ 7A	28 @ 7A	28 @ 6A	32 @ 7A	27 @ 6.8A	25 @ 7A
Vgs(th) (V)	3 @ 250µA	3 @ 250µA	3 @ 250µA	2.1 @ 250µA	2.3 @ 10µA	2.5 @ 1mA
Qg (nC)	26 @ 10V	16 @ 10V	10.5 @ 10V	9.2 @ 10V	14 @ 10V	8.4 / 8.5 @ 5V
Ciss (pF)	575 @ 15V	575 @ 15V	472 @ 15V	404.5 @ 15V	398 @ 15V	600 / 850 @ 10V
Power Max (W)	0.9	0.9	1.8	2.5	2	2
Package	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC
Product Status	Obsolete	Last Time Buy	Active	Active	Active	Active
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

FDS8958A (onsemi)

The FDS8958A is the primary direct substitute for the FDS8962C. Both devices are manufactured by onsemi within the PowerTrench® series and share identical electrical specifications: 30V Vdss, 7A/5A continuous drain current, and 8-SOIC packaging. The FDS8958A exhibits improved gate charge performance (16nC versus 26nC) and marginally lower on-resistance (28mOhm versus 30mOhm). The FDS8958A carries Last Time Buy status, indicating limited future availability. RoHS3 compliance is confirmed for the FDS8958A.

DMC3028LSD-13 (Diodes Incorporated)

The DMC3028LSD-13 is a similar substitute with active product status. It meets the 30V voltage requirement and provides continuous drain currents of 6.6A (N-channel) and 6.8A (P-channel), which satisfy the 7A/5A specification. The device features lower gate charge (10.5nC) and reduced input capacitance (472pF) compared to the main part. Power dissipation capability is doubled to 1.8W. RoHS3 compliance is confirmed. This part is suitable for applications where the slightly reduced current ratings are acceptable.

DMC3032LSD-13 (Diodes Incorporated)

The DMC3032LSD-13 is a similar substitute with active product status and enhanced performance characteristics. It exceeds the current requirements with 8.1A (N-channel) and 7A (P-channel) ratings. The device provides superior power handling at 2.5W and demonstrates lower gate charge (9.2nC) and input capacitance (404.5pF). The lower Vgs(th) of 2.1V may require circuit evaluation in gate drive applications. RoHS3 compliance is confirmed.

IRF9389TRPBF (Infineon Technologies)

The IRF9389TRPBF is a similar substitute from Infineon's HEXFET® series with active product status. It meets the 30V voltage requirement with continuous drain currents of 6.8A (N-channel) and 4.6A (P-channel). The P-channel current rating of 4.6A is below the 5A specification of the main part and requires application-level verification. The device offers improved on-resistance (27mOhm) and lower gate charge (14nC). Power dissipation is rated at 2W. RoHS3 compliance is confirmed.

SP8M10FRATB (Rohm Semiconductor)

The SP8M10FRATB is a similar substitute from Rohm Semiconductor with active product status and automotive qualification (AEC-Q101). It meets the 30V voltage requirement with 7A (N-channel) and 4.5A (P-channel) continuous drain currents. The P-channel current rating of 4.5A is below the 5A specification and requires application verification. The device features the lowest on-resistance (25mOhm for N-channel) and lowest gate charge (8.4nC / 8.5nC). Power dissipation is rated at 2W. RoHS3 compliance is confirmed. This part is qualified for automotive applications.

Frequently Asked Questions (FAQ)

Q: Can the FDS8958A be used as a direct replacement for the FDS8962C?

A: Yes. The FDS8958A is a direct substitute manufactured by the same company (onsemi) with identical electrical specifications and package configuration. Both devices feature 30V Vdss, 7A/5A continuous drain current, and 8-SOIC packaging. The FDS8958A exhibits improved performance in gate charge and on-resistance characteristics.

Q: What is the primary difference between direct substitutes and similar substitutes?

A: Direct substitutes maintain all electrical and mechanical specifications within acceptable tolerance ranges and function as pin-for-pin replacements without circuit modification. Similar substitutes meet core voltage and current requirements but may exhibit variations in secondary parameters such as gate charge, input capacitance, or on-resistance. Similar substitutes require verification of application-specific performance.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts carry RoHS3 compliance certification. The main part (FDS8962C) does not specify RoHS status due to its obsolete classification.

Q: Can I use the IRF9389TRPBF if my application requires 5A P-channel current?

A: The IRF9389TRPBF is rated for 4.6A P-channel continuous drain current, which is below the 5A requirement of the FDS8962C. Application-level verification is required to determine if this reduced rating is acceptable for your specific circuit.

Q: What is the significance of the SP8M10FRATB automotive qualification?

A: The SP8M10FRATB carries AEC-Q101 automotive qualification, indicating it meets automotive industry reliability and performance standards. This qualification is relevant only if your application requires automotive-grade components. For non-automotive applications, this qualification provides no additional benefit.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the amount of charge required to switch the MOSFET on or off. Lower gate charge values reduce switching losses and allow faster switching speeds. The FDS8962C specifies 26nC, while substitute parts range from 8.4nC to 16nC. Lower gate charge in substitute parts may improve efficiency in switching applications but does not affect DC operating characteristics.

Q: Are all substitute parts available in the same package dimensions?

A: All substitute parts are specified as 8-SOIC with 0.154" (3.90mm) width, matching the FDS8962C package footprint. Physical compatibility is confirmed for all listed substitutes.

Q: Which substitute part offers the best overall performance improvement?

A: The DMC3032LSD-13 provides the highest continuous drain current ratings (8.1A/7A), lowest gate charge (9.2nC), and highest power dissipation capability (2.5W). However, the optimal choice depends on your specific application requirements and performance priorities.

Q: What is the product status significance for long-term supply?

A: The FDS8962C is obsolete with no future availability. The FDS8958A carries Last Time Buy status, indicating limited remaining inventory. The DMC3028LSD-13, DMC3032LSD-13, IRF9389TRPBF, and SP8M10FRATB all carry active product status, ensuring ongoing availability for future production.

Q: Can I interchange substitute parts within the same design?

A: Substitution between similar parts (DMC3028LSD-13, DMC3032LSD-13, IRF9389TRPBF, SP8M10FRATB) requires circuit-level evaluation due to variations in gate charge, input capacitance, and current ratings. The FDS8958A is the only direct interchange without additional verification.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message