FDS8958 Equivalent & Substitute Parts

Part Overview

The FDS8958 is an N and P-Channel MOSFET array manufactured by onsemi, rated for 30V drain-to-source voltage with continuous drain currents of 7A (N-channel) and 5A (P-channel). The device is housed in an 8-SOIC surface mount package and features logic level gate operation. The FDS8958 is classified as obsolete, necessitating identification of equivalent substitute components for ongoing design requirements and production continuity.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	7A / 5A	A
On-Resistance (Rds On) @ Id, Vgs	28mOhm @ 7A, 10V	mOhm
Gate Threshold Voltage (Vgs(th)) @ Id	3V @ 250µA	V
Gate Charge (Qg) @ Vgs	26nC @ 10V	nC
Input Capacitance (Ciss) @ Vds	789pF @ 10V	pF
Power Dissipation (Max)	2	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-SOIC	-
Configuration	N and P-Channel	-
FET Feature	Logic Level Gate	-

Substitute Part Grouping Explanation

Substitution of the FDS8958 is determined by strict equivalence across the following critical parameters:

Voltage Rating: All substitute parts must maintain the 30V Vdss specification to ensure safe operation within the same circuit topology.

Current Rating: Substitute parts must support the required continuous drain current levels. The FDS8958 specifies 7A for the N-channel and 5A for the P-channel device. Substitutes with equal or higher current ratings are acceptable.

Package Type: The 8-SOIC surface mount package is mandatory for mechanical and thermal compatibility. Pin-to-pin compatibility is required.

Configuration: N and P-Channel dual MOSFET array configuration must be maintained.

Gate Feature: Logic level gate operation is required for direct compatibility with standard digital control circuits.

Temperature Range: Operating temperature range of -55°C to 150°C must be supported.

Electrical Characteristics: On-resistance (Rds On), gate charge (Qg), and input capacitance (Ciss) values determine switching performance and power dissipation characteristics. Substitutes with comparable or superior electrical characteristics are acceptable.

Parameter Comparison

Parameter	FDS8958	FDS8958A	FDS8958B	IRF9389TRPBF	SP8M10FRATB
Manufacturer	onsemi	onsemi	onsemi	Infineon Technologies	Rohm Semiconductor
Vdss (V)	30	30	30	30	30
Id @ 25°C (A)	7 / 5	7 / 5	6.4 / 4.5	6.8 / 4.6	7 / 4.5
Rds On (mOhm)	28 @ 7A, 10V	28 @ 7A, 10V	26 @ 6.4A, 10V	27 @ 6.8A, 10V	25 @ 7A, 10V
Vgs(th) (V)	3 @ 250µA	3 @ 250µA	3 @ 250µA	2.3 @ 10µA	2.5 @ 1mA
Qg (nC)	26 @ 10V	16 @ 10V	12 @ 10V	14 @ 10V	8.4 / 8.5 @ 5V
Ciss (pF)	789 @ 10V	575 @ 15V	540 @ 15V	398 @ 15V	600 / 850 @ 10V
Power Max (W)	2	0.9	0.9	2	2
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC
Product Status	Obsolete	Last Time Buy	Last Time Buy	Active	Active
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

FDS8958A (onsemi): This part maintains identical electrical specifications to the FDS8958 across voltage, current, and gate threshold parameters. The FDS8958A is classified as Last Time Buy, indicating limited future availability. RoHS3 compliance is confirmed. This substitute is suitable for direct replacement in applications where the 2W power dissipation specification is not exceeded and where onsemi component continuity is preferred.

FDS8958B (onsemi): This variant reduces continuous drain current to 6.4A (N-channel) and 4.5A (P-channel), with improved electrical characteristics including lower on-resistance (26mOhm) and reduced gate charge (12nC). Power dissipation is reduced to 900mW. The FDS8958B is classified as Last Time Buy with RoHS3 compliance. This substitute is suitable for applications where the lower current ratings are acceptable and where reduced switching losses are beneficial.

IRF9389TRPBF (Infineon Technologies): This part maintains the 30V voltage rating with comparable current ratings of 6.8A (N-channel) and 4.6A (P-channel). The IRF9389TRPBF features superior electrical characteristics including lower gate threshold voltage (2.3V), reduced gate charge (14nC), and significantly lower input capacitance (398pF). Product status is Active with RoHS3 compliance. This substitute is suitable for applications requiring long-term component availability and improved switching performance.

SP8M10FRATB (Rohm Semiconductor): This part maintains the 30V voltage rating with 7A (N-channel) and 4.5A (P-channel) current ratings. The SP8M10FRATB features the lowest on-resistance (25mOhm) and lowest gate charge (8.4nC to 8.5nC) among all substitutes. Product status is Active with AEC-Q101 automotive qualification and RoHS3 compliance. This substitute is suitable for applications requiring automotive-grade reliability and optimized switching performance.

Frequently Asked Questions (FAQ)

Q: Can the FDS8958 be directly replaced with FDS8958A?

A: Yes. The FDS8958A maintains identical electrical specifications for voltage rating (30V), continuous drain current (7A/5A), on-resistance (28mOhm), and gate threshold voltage (3V). Both devices use the 8-SOIC package. The primary difference is product status; FDS8958A is Last Time Buy while FDS8958 is obsolete.

Q: What is the difference between FDS8958A and FDS8958B?

A: FDS8958B reduces the continuous drain current specification to 6.4A (N-channel) and 4.5A (P-channel) compared to 7A/5A in FDS8958A. FDS8958B also features improved electrical characteristics with lower on-resistance (26mOhm versus 28mOhm), reduced gate charge (12nC versus 16nC), and lower input capacitance (540pF versus 575pF). Power dissipation is reduced from 2W to 900mW in FDS8958B.

Q: Is the IRF9389TRPBF pin-compatible with the FDS8958?

A: Yes. The IRF9389TRPBF uses the 8-SOIC package with identical pin spacing and configuration as the FDS8958. Both devices are N and P-Channel MOSFET arrays with logic level gate operation. Pin-to-pin compatibility is confirmed.

Q: What are the advantages of the SP8M10FRATB over the FDS8958?

A: The SP8M10FRATB offers several advantages: (1) Active product status ensuring long-term availability, (2) AEC-Q101 automotive qualification for enhanced reliability, (3) lower on-resistance (25mOhm versus 28mOhm) reducing power dissipation, (4) significantly lower gate charge (8.4nC to 8.5nC versus 26nC) enabling faster switching, and (5) RoHS3 compliance.

Q: Can I use a substitute part with lower current rating than the FDS8958?

A: Substitute parts with lower current ratings are acceptable only if the application circuit does not require the full 7A (N-channel) or 5A (P-channel) continuous drain current. The FDS8958B with 6.4A/4.5A ratings and IRF9389TRPBF with 6.8A/4.6A ratings are suitable for applications with reduced current requirements. Verify that the actual circuit current demand does not exceed the substitute part's rating.

Q: Are all substitute parts RoHS3 compliant?

A: FDS8958A, FDS8958B, IRF9389TRPBF, and SP8M10FRATB are all confirmed RoHS3 compliant. The original FDS8958 does not specify RoHS status in the provided data.

Q: Which substitute part offers the best switching performance?

A: The SP8M10FRATB offers the best switching performance with the lowest gate charge (8.4nC to 8.5nC at 5V) and lowest on-resistance (25mOhm at 7A, 10V). The IRF9389TRPBF also provides excellent performance with reduced input capacitance (398pF) compared to the FDS8958 (789pF).

Q: What is the operating temperature range for all substitute parts?

A: All substitute parts (FDS8958A, FDS8958B, IRF9389TRPBF, and SP8M10FRATB) support the full operating temperature range of -55°C to 150°C (junction temperature), matching the FDS8958 specification.

Q: Is the SP8M10FRATB suitable for automotive applications?

A: Yes. The SP8M10FRATB carries AEC-Q101 automotive qualification, making it suitable for automotive-grade applications. This qualification is not specified for the other substitute parts.

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