FDS8947A Equivalent & Substitute Parts

Part Overview

The FDS8947A is a dual P-channel MOSFET array manufactured by onsemi, designed for surface mount applications in 8-SOIC packaging. This device features logic level gate operation with a maximum drain-source voltage rating of 30V and continuous drain current capability of 4A at 25°C. The FDS8947A is classified as obsolete, necessitating identification of functionally equivalent substitute components for ongoing design requirements and procurement needs.

Substiute Parts

FDS8947A
onsemiIn Stock: 4045FDS8947A Datasheet
FDS8947A
Current Part
SH8J62TB1
Rohm SemiconductorIn Stock: 35691SH8J62TB1 Datasheet
SH8J62TB1
Similar

Key Parameters

Parameter Value Unit
Configuration 2 P-Channel (Dual)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 4 A
Rds On (Max) @ Id, Vgs 52 mOhm @ 4A, 10V
FET Feature Logic Level Gate
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Operating Temperature Range -55 to 150 °C (TJ)
Power - Max 900 mW

Substitute Part Grouping Explanation

Substitution of the FDS8947A is determined by strict equivalence across the following critical parameters:

Primary Substitution Criteria:

  • Dual P-channel MOSFET configuration
  • Minimum 30V drain-source voltage rating
  • Minimum 4A continuous drain current capability at 25°C
  • Logic level gate operation
  • Surface mount technology
  • Compatible 8-pin package footprint (8-SOIC/8-SOP)

The SH8J62TB1 manufactured by Rohm Semiconductor meets these substitution criteria. This device maintains the same voltage and channel configuration while providing enhanced current capability (4.5A) and improved power dissipation (2W maximum power rating versus 900mW). The package footprint remains compatible with 8-SOIC land patterns, and both devices employ logic level gate architecture suitable for direct replacement in existing circuit designs.

Parameter Comparison

Parameter FDS8947A (onsemi) SH8J62TB1 (Rohm) Unit
Configuration 2 P-Channel (Dual) 2 P-Channel (Dual)
Drain to Source Voltage (Vdss) 30 30 V
Current - Continuous Drain (Id) @ 25°C 4 4.5 A
Rds On (Max) @ Id, Vgs 52 @ 4A, 10V 56 @ 4.5A, 10V mOhm
FET Feature Logic Level Gate Logic Level Gate
Mounting Type Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Operating Temperature Range -55 to 150 Up to 150 °C (TJ)
Power - Max 900 2000 mW
Product Status Obsolete Active

Engineering Selection Recommendations

The SH8J62TB1 is the qualified substitute for the obsolete FDS8947A based on the following engineering factors:

Product Status: The FDS8947A is classified as obsolete, while the SH8J62TB1 maintains active product status with confirmed inventory availability (35,604 pieces in stock). This ensures long-term supply chain continuity and access to technical support.

Compliance & Certifications: The SH8J62TB1 carries RoHS3 compliance certification, meeting current environmental and regulatory requirements. Both devices maintain REACH Unaffected status and EAR99 export classification.

Electrical Compatibility: The SH8J62TB1 exceeds the minimum electrical specifications of the FDS8947A across all critical parameters. The higher continuous drain current rating (4.5A versus 4A) and increased power dissipation capability (2W versus 900mW) provide design margin and thermal headroom for existing applications.

Package Compatibility: Both devices utilize 8-SOIC packaging with identical footprint dimensions (0.154" width, 3.90mm), enabling direct PCB layout compatibility without redesign.

Frequently Asked Questions (FAQ)

Q: Can the SH8J62TB1 be used as a direct replacement for the FDS8947A in existing designs?

A: Yes. The SH8J62TB1 maintains electrical and mechanical compatibility with the FDS8947A. Both devices feature identical dual P-channel configuration, 30V voltage rating, and 8-SOIC package footprint. The SH8J62TB1 provides equal or superior performance across all specified parameters.

Q: What are the key differences between these two devices?

A: The primary differences are product status and performance enhancements. The FDS8947A is obsolete, while the SH8J62TB1 is active. The SH8J62TB1 offers higher continuous drain current (4.5A versus 4A), increased power dissipation capability (2W versus 900mW), and lower gate charge (8nC versus 27nC), resulting in improved thermal performance and faster switching characteristics.

Q: Are there any package compatibility concerns?

A: No. Both devices use 8-SOIC packaging with identical footprint dimensions. The SH8J62TB1 is supplied in 8-SOP format by the manufacturer, but the physical package dimensions and pin configuration remain compatible with existing 8-SOIC PCB layouts.

Q: What is the operating temperature range for the SH8J62TB1?

A: The SH8J62TB1 operates up to a maximum junction temperature of 150°C, matching the upper temperature limit of the FDS8947A. The FDS8947A specifies a lower temperature limit of -55°C; verify application requirements if operation below 0°C is necessary.

Q: Does the SH8J62TB1 require any circuit modifications?

A: No circuit modifications are required. The SH8J62TB1 is a functional equivalent with superior electrical characteristics. Existing gate drive circuits, biasing networks, and load configurations remain unchanged.

Q: What is the moisture sensitivity level for the SH8J62TB1?

A: The SH8J62TB1 carries MSL 1 (Unlimited) classification, identical to the FDS8947A. This indicates minimal moisture sensitivity and standard handling procedures.

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