FDS8928A Equivalent & Substitute Parts

Part Overview

The FDS8928A is an N and P-Channel MOSFET array manufactured by onsemi, rated for 30V and 20V drain-to-source voltage with continuous drain currents of 5.5A and 4A respectively. This device is packaged in an 8-SOIC surface mount configuration with a maximum power dissipation of 900mW and operates across a temperature range of -55°C to 150°C. The FDS8928A holds an Obsolete product status, making equivalent and substitute parts necessary for ongoing design support and procurement continuity.

Key Parameters

Parameter	Value
Drain to Source Voltage (Vdss)	30V, 20V
Continuous Drain Current (Id) @ 25°C	5.5A, 4A
Rds On (Max) @ Id, Vgs	30mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	28nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	900pF @ 10V
Power - Max	900mW
Configuration	N and P-Channel
FET Feature	Logic Level Gate
Package / Case	8-SOIC (0.154", 3.90mm Width)
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the FDS8928A is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

Drain to Source Voltage (Vdss) must equal or exceed 30V
Continuous drain current ratings must meet or exceed the application requirements (5.5A for N-channel, 4A for P-channel)
Configuration must remain N and P-Channel
FET feature must include Logic Level Gate operation
Operating temperature range must encompass -55°C to 150°C

Mechanical Compatibility Criteria:

Package must be 8-SOIC or equivalent 8-pin surface mount configuration
Physical dimensions must match 0.154" (3.90mm) width specification
Mounting type must be Surface Mount

Compliance Criteria:

RoHS3 compliance required
MSL rating of 1 (Unlimited) required
REACH Unaffected status required

Substitute parts are grouped into two categories: Direct Manufacturer Substitutes (same manufacturer, enhanced specifications) and Similar Manufacturer Substitutes (alternative manufacturers, equivalent or superior electrical performance).

Parameter Comparison

Parameter	FDS8928A	FDS8958A	AO4616	IRF9389TRPBF	SP8M10FRATB
Manufacturer	onsemi	onsemi	Alpha & Omega Semiconductor Inc.	Infineon Technologies	Rohm Semiconductor
Drain to Source Voltage (Vdss)	30V, 20V	30V	30V	30V	30V
Continuous Drain Current (Id) @ 25°C	5.5A, 4A	7A, 5A	8A, 7A	6.8A, 4.6A	7A, 4.5A
Rds On (Max) @ Id, Vgs	30mOhm @ 5.5A, 4.5V	28mOhm @ 7A, 10V	20mOhm @ 8A, 10V	27mOhm @ 6.8A, 10V	25mOhm @ 7A, 10V
Vgs(th) (Max) @ Id	1V @ 250µA	3V @ 250µA	2.4V @ 250µA	2.3V @ 10µA	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	28nC @ 4.5V	16nC @ 10V	18nC @ 10V	14nC @ 10V	8.4nC @ 5V, 8.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	900pF @ 10V	575pF @ 15V	888pF @ 15V	398pF @ 15V	600pF @ 10V, 850pF @ 10V
Power - Max	900mW	900mW	2W	2W	2W
Configuration	N and P-Channel	N and P-Channel	N and P-Channel	N and P-Channel	N and P-Channel
FET Feature	Logic Level Gate	Logic Level Gate	Logic Level Gate	Logic Level Gate	Logic Level Gate, 4V Drive
Package / Case	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)
Operating Temperature	-55°C ~ 150°C (TJ)	Not specified	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	150°C
Product Status	Obsolete	Last Time Buy	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

FDS8958A (onsemi)

The FDS8958A is a direct manufacturer substitute from onsemi with enhanced drain current ratings (7A N-channel, 5A P-channel) compared to the FDS8928A (5.5A, 4A). Both devices maintain identical 30V Vdss rating and 8-SOIC packaging. The FDS8958A features reduced on-resistance (28mOhm versus 30mOhm) and lower gate charge (16nC versus 28nC), resulting in improved switching efficiency. However, the FDS8958A carries a Last Time Buy status, indicating limited future availability. This substitute is suitable for applications requiring higher current capacity within the same voltage and package constraints.

AO4616 (Alpha & Omega Semiconductor Inc.)

The AO4616 is an active product offering superior electrical performance with 8A N-channel and 7A P-channel continuous drain currents. This device provides the lowest on-resistance (20mOhm) among all substitutes and increased power dissipation capability (2W versus 900mW). The AO4616 maintains full compatibility with the 8-SOIC package and operating temperature range. Active product status ensures long-term availability and supply chain stability. This substitute is recommended for applications where improved thermal performance and higher current handling are beneficial.

IRF9389TRPBF (Infineon Technologies)

The IRF9389TRPBF is an active Infineon HEXFET product with 6.8A N-channel and 4.6A P-channel ratings. This device features the lowest input capacitance (398pF) and gate charge (14nC) among all substitutes, enabling faster switching characteristics. The 2W power rating provides enhanced thermal capability. The IRF9389TRPBF maintains full compliance with RoHS3, MSL 1, and operating temperature specifications. Active product status guarantees availability. This substitute is suitable for high-frequency switching applications where reduced parasitic capacitance is advantageous.

SP8M10FRATB (Rohm Semiconductor)

The SP8M10FRATB is an active automotive-grade product qualified to AEC-Q101 standards with 7A N-channel and 4.5A P-channel ratings. This device features the lowest gate charge (8.4nC and 8.5nC) and includes 4V drive capability for enhanced gate drive flexibility. The 2W power rating and 8-SOIC packaging provide full mechanical and electrical compatibility. Automotive qualification and active status make this substitute suitable for automotive and mission-critical applications requiring enhanced reliability documentation.

Frequently Asked Questions (FAQ)

Q: Can the FDS8928A be directly replaced with any of these substitutes without circuit modification?

A: All listed substitutes maintain the same 8-SOIC package footprint, 30V Vdss rating, and N/P-Channel configuration with Logic Level Gate operation. Direct PCB replacement is mechanically and electrically feasible. However, the enhanced electrical characteristics (higher current ratings, lower on-resistance, reduced gate charge) of substitute parts may alter circuit performance characteristics such as switching speed and thermal dissipation. Circuit validation is necessary to confirm performance alignment with design specifications.

Q: What is the primary reason for finding substitutes for the FDS8928A?

A: The FDS8928A carries an Obsolete product status, indicating discontinued manufacturing and limited inventory availability. Substitutes ensure design continuity and long-term supply chain reliability. The FDS8958A (Last Time Buy status) provides a near-term alternative, while AO4616, IRF9389TRPBF, and SP8M10FRATB (all Active status) offer long-term procurement solutions.

Q: Are all substitutes RoHS3 compliant and MSL 1 rated?

A: Yes. All listed substitutes maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, matching the FDS8928A specifications. This ensures compatibility with modern manufacturing processes and storage requirements.

Q: Which substitute offers the best thermal performance?

A: The AO4616 and IRF9389TRPBF both provide 2W maximum power dissipation compared to the FDS8928A's 900mW rating. The AO4616 additionally features the lowest on-resistance (20mOhm), resulting in reduced I²R losses. For thermal-constrained applications, either device provides superior heat dissipation capability.

Q: What is the difference between the FDS8958A and other substitutes?

A: The FDS8958A is a direct onsemi product with specifications closely aligned to the FDS8928A (same 900mW power rating, same 8-SOIC package). It offers enhanced current ratings and reduced on-resistance while maintaining the original manufacturer's design philosophy. However, Last Time Buy status limits its long-term viability. Other substitutes from alternative manufacturers provide active product status and higher power ratings (2W).

Q: Does package compatibility extend to PCB layout considerations?

A: All substitutes use the 8-SOIC package with 0.154" (3.90mm) width, ensuring identical PCB footprint compatibility. Pin assignments and functional configurations remain consistent across all devices. No PCB layout modifications are required for mechanical placement.

Q: Which substitute is recommended for automotive applications?

A: The SP8M10FRATB is specifically qualified to AEC-Q101 automotive standards and carries automotive-grade designation. This device is the appropriate selection for automotive and mission-critical applications requiring enhanced reliability documentation and qualification traceability.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET. The FDS8928A requires 28nC at 4.5V, while substitutes range from 8.4nC to 18nC at 10V. Lower gate charge enables faster switching transitions and reduced gate drive power consumption. Applications with high switching frequencies benefit from substitutes with lower gate charge values, particularly the SP8M10FRATB (8.4nC) and IRF9389TRPBF (14nC).

Q: Are there any temperature range limitations with the substitutes?

A: The FDS8928A, AO4616, and IRF9389TRPBF all specify -55°C to 150°C operating temperature range. The FDS8958A does not specify a minimum temperature in the provided data. The SP8M10FRATB specifies 150°C maximum without explicit minimum temperature documentation. For applications requiring full -55°C to 150°C operation, the AO4616 and IRF9389TRPBF are the preferred selections.

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