FDS8882 Equivalent & Substitute Parts

Part Overview

The FDS8882 is an N-Channel 30V 9A MOSFET manufactured by onsemi in the PowerTrench® series, housed in an 8-SOIC surface mount package. This device is classified as obsolete, indicating it has been discontinued and is no longer recommended for new designs. The FDS8882 delivers 2.5W maximum power dissipation and operates across the temperature range of -55°C to 150°C (TJ).

Due to its obsolete status, equivalent and substitute parts are necessary for ongoing production support, maintenance applications, and design continuity. Substitute MOSFETs must maintain electrical compatibility across critical parameters including drain-source voltage rating, continuous drain current capability, on-resistance characteristics, and thermal performance to ensure functional equivalence in existing circuit implementations.

Substiute Parts

FDS8882

onsemiIn Stock: 17721FDS8882 Datasheet

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DMN3018SSS-13

Diodes IncorporatedIn Stock: 17671DMN3018SSS-13 Datasheet

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DMN3030LSS-13

Diodes IncorporatedIn Stock: 35054DMN3030LSS-13 Datasheet

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STS10N3LH5

STMicroelectronicsIn Stock: 15344STS10N3LH5 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the FDS8882 MOSFET is determined by strict alignment of electrical and mechanical parameters. The following criteria establish substitution validity:

Primary Substitution Criteria:

• Drain-Source Voltage (Vdss): Must equal or exceed 30V
• Continuous Drain Current (Id): Must equal or exceed 9A at 25°C
• On-Resistance (Rds On): Must not exceed 20mOhm at rated current and gate voltage
• Power Dissipation: Must support minimum 2.5W (Ta)
• Operating Temperature Range: Must encompass -55°C to 150°C (TJ)
• Package Type: Must be 8-SOIC or mechanically equivalent 8-SO surface mount
• Gate Voltage Rating (Vgs Max): Must accommodate ±20V minimum

Secondary Compatibility Parameters:

• Gate Threshold Voltage (Vgs(th)): Acceptable range 1V to 3V @ 250µA
• Gate Charge (Qg): Lower values acceptable; higher values require circuit validation
• Input Capacitance (Ciss): Variation acceptable within switching performance tolerance

The three substitute parts identified—DMN3018SSS-13, DMN3030LSS-13, and STS10N3LH5—satisfy these criteria with varying degrees of parameter alignment and product status classification.

Parameter Comparison

Engineering Selection Recommendations

DMN3030LSS-13 (Diodes Incorporated) – Primary Substitute

The DMN3030LSS-13 represents the optimal substitute for the FDS8882. This device matches the FDS8882 across all critical electrical parameters: 30V Vdss rating, 9A continuous drain current, 2.5W power dissipation, and -55°C to 150°C operating temperature range. The on-resistance specification of 18mOhm @ 9A, 10V is superior to the FDS8882's 20mOhm, providing improved thermal performance. The DMN3030LSS-13 carries Active product status, ensuring long-term availability and manufacturing support. ROHS3 compliance and unlimited moisture sensitivity level (MSL 1) align with the original device specifications. The 8-SO package is mechanically compatible with 8-SOIC footprints in standard PCB layouts.

STS10N3LH5 (STMicroelectronics) – Secondary Substitute

The STS10N3LH5 provides functional equivalence with enhanced current capability (10A continuous drain current versus 9A). This device maintains 30V Vdss rating, 2.5W power dissipation, and full temperature range compatibility. The on-resistance of 21mOhm @ 5A, 10V is within acceptable tolerance. However, the STS10N3LH5 carries "Not For New Designs" status, limiting its suitability for long-term production applications. The STripFET™ V series designation indicates mature technology. This substitute is appropriate for maintenance and legacy system support where component availability is constrained. ROHS3 compliance and 8-SOIC package compatibility are maintained.

DMN3018SSS-13 (Diodes Incorporated) – Limited Substitute

The DMN3018SSS-13 does not meet the primary substitution criterion of 9A continuous drain current, delivering only 7.3A. This 18.9% current reduction restricts its application to circuits with lower current demands or where thermal derating is acceptable. The device maintains 30V Vdss rating, -55°C to 150°C operating temperature, and ROHS3 compliance. Power dissipation is limited to 1.4W (Ta), significantly below the FDS8882's 2.5W specification. The on-resistance of 21mOhm @ 10A, 10V is marginally higher than the original device. Active product status ensures availability. This substitute is applicable only in applications where the 7.3A current rating is sufficient and thermal performance is not critical.

Frequently Asked Questions (FAQ)

Q: Can the DMN3030LSS-13 be used as a direct replacement for the FDS8882 without circuit modification?

A: The DMN3030LSS-13 is electrically and mechanically compatible with the FDS8882 across all specified parameters. The 8-SO package is compatible with 8-SOIC PCB footprints. No circuit modification is required for functional substitution. The superior on-resistance (18mOhm versus 20mOhm) provides improved performance characteristics.

Q: Why is the STS10N3LH5 marked "Not For New Designs" if it functions as a substitute?

A: The "Not For New Designs" status indicates that STMicroelectronics has classified this device as mature technology with limited future development support. While the STS10N3LH5 meets electrical and mechanical substitution criteria, it is appropriate only for legacy system maintenance and repair applications where component continuity is required. New designs should prioritize the DMN3030LSS-13 (Active status) for long-term supply assurance.

Q: What is the significance of the difference in gate charge (Qg) between the FDS8882 (20 nC) and STS10N3LH5 (4.6 nC)?

A: Gate charge directly affects switching speed and driver circuit requirements. The STS10N3LH5's lower gate charge (4.6 nC) results in faster switching transitions and reduced driver power consumption compared to the FDS8882 (20 nC). In most applications, this represents an improvement. However, circuits with gate driver timing constraints or specific switching frequency requirements should validate performance with the substitute device.

Q: Is the DMN3018SSS-13 suitable for applications requiring the full 9A current rating of the FDS8882?

A: No. The DMN3018SSS-13 is rated for 7.3A continuous drain current, which is 18.9% below the FDS8882's 9A specification. This device is not suitable for applications requiring the full 9A current capacity. Use of the DMN3018SSS-13 in such applications will result in thermal stress and potential device failure. The DMN3030LSS-13 or STS10N3LH5 are required for full current compatibility.

Q: Are all three substitute parts ROHS3 compliant and moisture sensitive level 1?

A: Yes. All three substitute parts—DMN3018SSS-13, DMN3030LSS-13, and STS10N3LH5—carry ROHS3 compliance certification and MSL 1 (Unlimited) moisture sensitivity level ratings, matching the FDS8882 specifications. Storage and handling requirements are identical across all devices.

Q: What is the practical difference between the 8-SOIC and 8-SO package designations?

A: The 8-SOIC and 8-SO designations refer to the same physical package form factor: 8-pin Small Outline Integrated Circuit with 0.154" (3.90mm) width. Both packages are mechanically and electrically compatible on standard PCB layouts. The terminology variation reflects different manufacturer naming conventions; no physical modification or re-layout is required when substituting between these package types.

Q: Can the DMN3030LSS-13 handle the same power dissipation as the FDS8882?

A: Yes. Both devices are rated for 2.5W maximum power dissipation. The DMN3030LSS-13 actually provides superior thermal performance due to its lower on-resistance (18mOhm versus 20mOhm), resulting in reduced I²R losses at equivalent current levels. Thermal management requirements are equivalent or improved with the DMN3030LSS-13.