FDS8876 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FDS8876 is an N-Channel 30V MOSFET manufactured by onsemi in the PowerTrench® series, rated for 12.5A continuous drain current at 25°C with 2.5W power dissipation. The device is packaged in 8-SOIC surface mount configuration and is currently classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active manufacturers are necessary for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across drain-source voltage, continuous drain current, on-resistance characteristics, and thermal specifications while accommodating packaging variations.

Key Parameters

Parameter	FDS8876 Specification
Drain to Source Voltage (Vdss)	30 V
Continuous Drain Current (Id) @ 25°C	12.5A (Ta)
On-Resistance (Rds On Max) @ 12.5A, 10V	8.2 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2.5V
Gate Charge (Qg) @ 10V	36 nC
Input Capacitance (Ciss) @ 15V	1650 pF
Power Dissipation (Max)	2.5W (Ta)
Operating Temperature Range	-55°C to 150°C (TJ)
Package Type	8-SOIC (0.154", 3.90mm Width)
Mounting Type	Surface Mount
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level	1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the FDS8876 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): Must be ≥30V to maintain voltage margin
Continuous Drain Current (Id): Must be ≥12.5A to support circuit current requirements
On-Resistance (Rds On): Must be ≤9.1 mOhm to ensure thermal and efficiency compatibility
Gate Threshold Voltage (Vgs(th)): Must be within ±20V gate supply range
Power Dissipation: Must be ≥2.5W (Ta) to handle thermal load
Operating Temperature: Must support -55°C to 150°C range
Package: 8-SOIC or 8-SOP surface mount configurations are acceptable
Compliance: RoHS3 compliance and MSL 1 rating required

Substitute parts are grouped into two categories: Parametric Equivalents (identical electrical specifications with packaging variations) and Functional Substitutes (equivalent performance within specified parameter ranges).

Parameter Comparison

Parameter	FDS8876	FDS8876-F40	FDS4470	DMN3010LSS-13	IRF7821TRPBF	RSS125N03TB	SI4174DY-T1-GE3
Manufacturer	onsemi	onsemi	Fairchild Semiconductor	Diodes Incorporated	Infineon Technologies	Rohm Semiconductor	Vishay Siliconix
Vdss (V)	30	30	40	30	30	30	30
Id @ 25°C (A)	12.5	12.5	12.5	16	13.6	12.5	17
Rds On Max @ 10V (mOhm)	8.2	8.2	9	9	9.1	8.9	9.5
Vgs(th) @ 250µA (V)	2.5	2.5	5	2	1	2.5	2.2
Qg @ 10V (nC)	36	36	63	43.7	14	28	27
Ciss @ 15V (pF)	1650	1650	2659	2096	1010	1670	985
Power Dissipation (W)	2.5 (Ta)	2.5 (Ta)	2.5 (Ta)	2.5 (Ta)	2.5 (Ta)	2 (Ta)	2.5 (Ta), 5 (Tc)
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 175	-55 to 150	-55 to 155	-55 to 150	-55 to 150
Package	8-SOIC	8-SOIC	8-SOIC	8-SOP	8-SO	8-SOP	8-SOIC
Product Status	Obsolete	Active	Active	Active	Active	Active	Active
RoHS3 Compliant	Yes	Yes	Not specified	Yes	Yes	Yes	Yes
MSL Rating	1	1	Not specified	1	1	1	1

Engineering Selection Recommendations

Parametric Equivalent (Direct Replacement):

FDS8876-F40 is a parametric equivalent of the FDS8876, offering identical electrical specifications including 30V Vdss, 12.5A continuous drain current, and 8.2 mOhm on-resistance. The primary difference is packaging format: FDS8876-F40 is supplied in Tape & Reel (TR) configuration versus the original Cut Tape (CT) & Digi-Reel® format. Both devices are RoHS3 compliant with MSL 1 rating. FDS8876-F40 maintains active product status, ensuring long-term availability and supply chain continuity.

Functional Substitutes (Performance-Equivalent Alternatives):

The following parts provide functional equivalence within specified parameter ranges:

SI4174DY-T1-GE3 (Vishay Siliconix): Maintains 30V Vdss and exceeds current rating at 17A. On-resistance of 9.5 mOhm is within acceptable tolerance. Gate charge of 27 nC is lower than the original 36 nC, resulting in faster switching characteristics. Input capacitance of 985 pF is significantly lower, reducing gate drive requirements. Active product status with RoHS3 compliance.

IRF7821TRPBF (Infineon Technologies): Maintains 30V Vdss with 13.6A continuous drain current. On-resistance of 9.1 mOhm is within specification. Gate charge of 14 nC is substantially lower, enabling improved switching performance. Input capacitance of 1010 pF is reduced compared to the original. Active product status with full compliance certifications.

DMN3010LSS-13 (Diodes Incorporated): Exceeds current rating at 16A while maintaining 30V Vdss. On-resistance of 9 mOhm is within tolerance. Package variant is 8-SOP instead of 8-SOIC, requiring PCB layout verification. Active product status with RoHS3 compliance.

RSS125N03TB (Rohm Semiconductor): Matches 30V Vdss and 12.5A current rating. On-resistance of 8.9 mOhm is within specification. Power dissipation is rated at 2W (Ta), which is lower than the original 2.5W specification. Gate charge of 28 nC is lower than the original. Active product status with RoHS3 compliance.

FDS4470 (Fairchild Semiconductor): Provides higher voltage rating at 40V Vdss, offering additional voltage margin. Maintains 12.5A continuous drain current. On-resistance of 9 mOhm is within tolerance. Gate charge of 63 nC is higher than the original, requiring increased gate drive capability. Operating temperature range extends to 175°C. Active product status.

Selection Criteria Based on Product Status and Compliance:

All substitute parts listed maintain active product status, ensuring availability for new designs and production. All recommended substitutes are RoHS3 compliant with MSL 1 moisture sensitivity rating, matching the original FDS8876 compliance profile. Package compatibility must be verified during PCB layout review, as 8-SOP variants (DMN3010LSS-13, RSS125N03TB) differ from 8-SOIC footprints.

Frequently Asked Questions (FAQ)

Q: Can FDS8876-F40 be used as a direct replacement for FDS8876?

A: Yes. FDS8876-F40 is a parametric equivalent with identical electrical specifications. The only difference is packaging format (Tape & Reel versus Cut Tape & Digi-Reel). Both devices have 30V Vdss, 12.5A continuous drain current, and 8.2 mOhm on-resistance. PCB footprint compatibility is maintained as both use 8-SOIC packaging.

Q: What is the primary reason to substitute the FDS8876?

A: The FDS8876 is classified as obsolete. Substitute parts from active manufacturers ensure long-term supply chain availability and support for new production runs and design revisions.

Q: Are all substitute parts RoHS3 compliant?

A: All recommended substitute parts are RoHS3 compliant with MSL 1 moisture sensitivity rating, matching the original FDS8876 compliance profile. Compliance certifications are provided in the parameter comparison table.

Q: Can I use SI4174DY-T1-GE3 in place of FDS8876 without circuit modifications?

A: SI4174DY-T1-GE3 maintains 30V Vdss and exceeds current rating at 17A. However, gate charge is significantly lower (27 nC versus 36 nC), and input capacitance is reduced (985 pF versus 1650 pF). These differences may affect gate drive timing and switching characteristics. Circuit verification is necessary to confirm compatibility with existing gate drive circuitry.

Q: What is the difference between 8-SOIC and 8-SOP packages?

A: Both are surface mount packages with 8 pins and 0.154" (3.90mm) width. The primary difference is lead configuration and PCB footprint geometry. DMN3010LSS-13 and RSS125N03TB use 8-SOP packaging, which requires PCB layout verification to ensure compatibility with existing 8-SOIC footprints. Consult device datasheets for precise footprint dimensions.

Q: Which substitute offers the lowest on-resistance?

A: FDS8876-F40 and the original FDS8876 both specify 8.2 mOhm on-resistance at 12.5A and 10V gate voltage. RSS125N03TB offers 8.9 mOhm, which is marginally higher but within acceptable tolerance for most applications.

Q: Does FDS4470 provide better performance than FDS8876?

A: FDS4470 provides higher voltage rating (40V versus 30V), offering additional voltage margin for transient protection. However, gate charge is higher (63 nC versus 36 nC), requiring increased gate drive capability. On-resistance is comparable at 9 mOhm. Selection depends on specific circuit requirements for voltage margin versus gate drive capability.

Q: Can I use a substitute with higher current rating than 12.5A?

A: Yes. Substitutes with higher current ratings (DMN3010LSS-13 at 16A, SI4174DY-T1-GE3 at 17A) are acceptable and provide additional current margin. These parts maintain or improve on-resistance characteristics and are fully compatible with circuits designed for 12.5A operation.

Q: What is the operating temperature range for all substitutes?

A: Most substitutes support -55°C to 150°C operating range, matching the original FDS8876. FDS4470 extends to 175°C, and IRF7821TRPBF extends to 155°C. All substitutes support the original temperature range as a minimum.

Q: Are there any substitutes with lower power dissipation than 2.5W?

A: RSS125N03TB is rated at 2W (Ta) power dissipation, which is lower than the original 2.5W specification. This may limit thermal performance in high-power applications. SI4174DY-T1-GE3 offers 5W (Tc) rating when measured at case temperature, providing improved thermal performance in applications with active cooling.

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